Patents Examined by S. W. Crane
  • Heterojunction semiconductor devices having a doping interface dipole
    Patent number: 4686550
    Abstract: Heterojunction devices having doping interface dipoles near the heterojunction interface are disclosed. The doping interface dipoles comprise two charge sheets of different conductivity type which are positioned within a carrier mean free path of the heterojunction interface.
    Type: Grant
    Filed: December 4, 1984
    Date of Patent: August 11, 1987
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Federico Capasso, Alfred Y. Cho