Patents Examined by Samuel Admoso
  • Semiconductor device and method of manufacturing thereof
    Patent number: 6784059
    Abstract: This invention is characterized in that, a gate electrode 27F formed on a P-type well 3 via a gate oxide film 9, a high-concentration N-type source layer and a high-concentration N-type drain layer 15 respectively formed apart from the gate electrode and a low-concentration N-type source layer and a low-concentration H-type drain layer respectively formed so that they respectively surround the N-type source layer and the N-type drain layer 10 and respectively parted by a P-type body layer formed under the gate electrode 27F are provided.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: August 31, 2004
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Toshimitsu Taniguchi, Takashi Arai, Masashige Aoyama, Kazuhiro Yoshitake