Patents Examined by Savitir Mulpuri
  • Light emitting diode with ZnO emitter
    Patent number: 10439106
    Abstract: A light emitting diode (LED) includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. A p-type confinement layer is provided on the p-type substrate. An emission layer is provided on the p-type confinement layer. An n-type confinement layer is provided on the emission layer. A transparent II-VI n-type contact layer is formed on the n-type confinement layer as a replacement for a current spreading layer, a III-V contact layer and an n-type ohmic contact.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: October 8, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Keith E. Fogel, Jeehwan Kim, Ning Li, Devendra K. Sadana