Patents Examined by Seahvosh Nikimanesh
  • Method for fabricating semiconductor device
    Patent number: 9349813
    Abstract: A method for fabricating a semiconductor device includes forming at least two gate patterns on a substrate, forming sidewalls surrounding the gate patterns, wherein the sidewalls extend above an upper surface of the gate patterns, and forming a first conducting material in a first space and a second space, wherein the first space is provided above the gate patterns and between the sidewalls that extend above the upper surface of the gate patterns and the second space is provided between the gate patterns.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: May 24, 2016
    Assignee: Hynix Semiconductor Inc.
    Inventor: Sul Hwan Lee