Abstract: A damping circuit having an input terminal and an output terminal is described. The damping circuit comprises a driver having an input and an output; an RC circuit coupled between the input terminal and the output; and a resistor coupled between the output and the output terminal, wherein the RC circuit delays passing a signal from the output terminal to the input terminal and a low impedance associated with the driver generally reduces ringing.

Abstract: Coherent beam combining of laser gain elements achieves high output power in a diffraction limited beam. An active beam combining system coherently combines optical beams emitted by semiconductor laser gain elements in an external resonant cavity configuration. A beam combiner in the resonant cavity combines the outputs of the laser gain elements into a single coherent output beam whose power is monitored by a photodetector. A processor uses the photodetector's output to adjust the phases of the respective optical beams emitted by the laser gain elements so as to increase or maximize the coherent output beam's power. The processor may vary the optical beams' phases according to a stochastic parallel gradient descent (SPGD) algorithm for active phase control. Experimental results show a beam combining efficiency of 81% with an upper limit of 90% or higher and without the scaling limits imposed on passive-phasing systems.

Abstract: A correction circuit includes a correction section configured to superpose a second current pulse on a first current pulse, and thereby correcting a waveform of the first current pulse, the first current pulse being output from a current source configured to drive a surface-emitting semiconductor laser in a pulsed manner, the correction section being configured to allow the second pulse to have a waveform obtained through attenuating a crest value of the second current pulse with time, increasing an initial crest value of the second current pulse by an amount that is larger as magnitude of the first current pulse is larger, and allowing the amount by which the initial crest value is increased to be smaller as ambient temperature of the semiconductor laser is higher, and being configured to output the second pulse having the waveform.

Abstract: An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region in a growth direction of the semiconductor body, a phase structure is formed in the semiconductor body and includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer including a semiconductor material different from the semiconductor material of the second cladding layer is embedded into the second cladding layer, and the cutout extends from a top side of the semiconductor body at least partly into the first intermediate layer.

Abstract: Monolithically integrated optical resonators are disclosed. An optical resonator may be a nanopillar optical resonator that is formed directly on a substrate and promotes a helically-propagating cavity mode. The helically-propagating cavity mode may result in significant reflection or, total internal reflection at an interface of the nanopillar optical resonator and the substrate even if refractive indices of the nanopillar optical resonator and the substrate are the same or similar. As a result, strong optical feedback, and thus strong resonance, may be provided in the nanopillar optical resonator.

Abstract: A driver for an EA-DFB device includes a switching device. The EA-DFB device is put between a positive power supply and a negative power supply as connected in series to a bias current source and the switching device. The EA device is modulated by the switching device in the differential mode. The switching device includes paired transistors each having a load, one of which is a resistor connected in parallel to the EA device, while, the other is constituted by a resistive element.

Abstract: An approach is provided for adjusting network interface metrics to optimize transmissions across a network. A measurement of performance of a network interface is made, wherein the network interface is configured to provide traffic across an optical network. A determination is made regarding whether the measured performance satisfies a predetermined threshold. A network metric value of the network interface is adjusted if the measured performance of the network interface satisfies the predetermined threshold.

Abstract: A high-gain optical amplifier for a wave to be amplified at a wavelength referred to as the emission wavelength, includes: optical pumping elements (4) producing a pump wave at a wavelength referred to as the pump wavelength; a solid amplifying medium (1) that is doped with active ions, the solid amplifying medium being capable of emitting laser radiation at the emission wavelength when the medium is pumped by the pumping elements; cooling elements (2) capable of cooling the solid amplifying medium to a temperature of no higher than 250 Kelvin; and optical multiplexing elements capable of coupling together the pump wave and the wave to be amplified in the amplifying medium. The amplifying medium has Stark sublevels contained within a spectral domain ranging over less than 200 cm?1 (approximately 20 nm, when expressed in wavelength). A laser including a resonant optical cavity and an amplifier are also described.

Abstract: A method for producing an externally injected gain switch laser ultrashort pulse, comprising the following steps of ultrashort light pulse signals having multi-longitudinal mode characteristic produced by the gain switch laser are inputted into an optical amplifier and then amplified; a spectral component signal selector selects a narrow spectral component signal outputted by the optical amplifier, the narrow spectral component signal is within an amplified spontaneous emission noise frequency band and its central wavelength is equal to the longitudinal mode of the gain switch laser; a route of the narrow spectral component signal is used as an external seed light and reinjected into the gain switch laser via a spectral component signal feedback loop. Therefore, the oscillation of a selected single longitudinal mode within the cavity of the gain switch laser is enhanced, thereby forming an externally light injected locking.

Abstract: A semiconductor laser has an optical cavity comprising and active layer disposed between an n-side barrier layer and a p-side barrier layer. The active layer comprises alternating layers of a first and second material, and the n-side barrier layer and p-side barrier layer each comprise alternating layers of the first material and a third material. The materials are selected such that the layers of the second and third materials form quantum wells between the layers of the first material. A band gap Eg of the second material is arranged such that a proportion of electrons and holes that recombine across the band gap Eg recombine to emit photons at the lasing wavelength, the proportion decreasing with increasing temperature of the optical cavity.

Abstract: Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 ?m. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.

Abstract: In a method, a gain medium is provided having an absorption coefficient that varies with wavelength. An absorption coefficient curve of the absorption coefficient or a range of wavelengths comprises peaks and valleys. A pump module is operated to output pump energy at an operating wavelength within one of the valleys, at which the absorption coefficient is approximately less than 40% of the absorption coefficient at an adjacent peak of the absorption coefficient curve defining the valley. The pump energy is directed through the gain medium. A portion of the pump energy is absorbed with the gain medium and laser light is emitted from the gain medium responsive to the absorbed pump energy. The non-absorbed pump energy (feedback pump energy) is fed back to the pump module. The operating wavelength of the pump energy is stabilized using the feedback pump energy.

Abstract: A system and method of operating a high repetition rate gas discharge laser system. The system includes a gas discharge chamber having a hot chamber output window heated by the operation of the gas discharge laser chamber, an output laser light pulse beam path enclosure downstream of the hot chamber window and comprising an ambient temperature window, a cooling mechanism cooling the beam path enclosure intermediate the output window and the ambient window. The gas discharge chamber can include a longitudinally and axially compliant ground rod, including a first end connected to a first chamber wall, a second end connected to a second chamber wall, the second chamber wall opposite the first chamber wall and a first portion formed into a helical spring, the ground rod providing mechanical support for a preionizer tube.

Abstract: A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to be manufactured with high yield rate.

Abstract: A driver device for a laser includes a control device configured to generate a control current, an NPN differential amplifier connected to the control device and configured to superimpose a modulation current onto the control current to generate a combined current, and a laser activation switch coupled to the output of the NPN differential amplifier, the laser activation switch operating the laser utilizing the combined current. Also described herein is a communication system including a driver device.

Abstract: A laser oscillation device includes an oscillation unit oscillating a laser, a shutter unit covering the laser, and a connection unit covering the laser, connecting the oscillation unit and the shutter unit and including a first connection part supported by the oscillation unit and a second connection part supported by the shutter unit. The first and second connection parts are separated from each other, and one of the first and second connection parts covers at least a portion of the other one of the first and second connection parts.

Abstract: A laser diode drive circuit includes a power supply circuit connected to an anode of a laser diode to supply a variable voltage to the laser diode, and a drive current control circuit connected to a cathode of the laser diode to control a current of the laser diode. The power supply circuit generates a start-up voltage which is equal to the sum of the maximum drive voltage that is larger than the drive voltage and a predetermined first reference voltage, acquires a cathode voltage of the laser diode while the start-up voltage is generated, generates a voltage by lowering from the start-up voltage so as to diminish the difference between the acquired cathode voltage and the first reference voltage, and the first reference voltage is the minimum cathode voltage necessary to supply a predetermined current to the laser diode by the drive current control circuit.

Abstract: A wavelength conversion laser light source, including a solid-state laser medium configured to generate fundamental light; a wavelength conversion element configured to convert the fundamental light into second harmonic light which has a higher frequency than the fundamental light; and a conductive material in contact with the wavelength conversion element, wherein the wavelength conversion element includes a polarization inverted structure formed with a polarization inversion region, and a first lateral surface which perpendicularly intersects with the polarization inversion region, and the conductive material is in contact with the first lateral surface.

Abstract: In one embodiment, notifications of upcoming maintenance activities are provided by network devices, such as to allow packet switching or other optical layer client devices to reroute traffic prior to the occurrence of the traffic affecting event. For example, one such network device includes optical interfaces for coupling with fibers for transporting information using dense wavelength-division multiplexing (DWDM); DWDM switching equipment for cross-connecting wavelengths of the fibers; and a controller configured to inform packet switching or other optical layer client devices whose traffic would be affected by an upcoming event that would disrupt communication on one or more wavelengths on one or more fibers so that the packet switching or other optical layer client devices can reroute traffic that would otherwise go over said one or more wavelengths onto a different path in a network prior to said disruption.

Abstract: Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.