Abstract: An example relates to an integrated circuit including a semiconductor substrate, and a wiring layer stack located on the semiconductor substrate. The integrated circuit further includes a transistor embedded in the wiring layer stack. The transistor includes an embedded layer. The embedded layer has a thickness of less than 10 nm. The embedded layer includes at least one two-dimensional crystalline layer including more than 10% metal atoms. Further examples relate to methods for forming integrated circuits.
Type:
Grant
Filed:
December 17, 2018
Date of Patent:
November 2, 2021
Assignee:
Intel Corporation
Inventors:
Carl Naylor, Ashish Agrawal, Kevin Lin, Abhishek Sharma, Mauro Kobrinsky, Christopher Jezewski, Urusa Alaan