Abstract: Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.

Abstract: A polishing composition includes more than 0.1% by mass of colloidal silica, and water, and has a pH of 6 or less. The polishing composition has the ability to polish a titanium material at a high stock removal rate. Thus, the polishing composition is suitable for use in applications for polishing a titanium-containing object.

Abstract: A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in absence of any external stress, and its thickness can be less than or equal to one micrometer.

Abstract: A method and system provides a near-field transducer (NFT) for an energy assisted magnetic recording (EAMR) transducer. The method and system include forming a sacrificial NFT structure having a shape a location corresponding to the NFT. A dielectric layer is deposited. A portion of the dielectric layer resides on the sacrificial NFT structure. At least this portion of the dielectric layer on the sacrificial structure is removed. The sacrificial NFT structure is removed, exposing an NFT trench in the dielectric layer. At least one conductive layer for the NFT is deposited. A first portion of the conductive layer(s) reside in the NFT trench. A second portion of the conductive layer(s) external to the NFT trench is removed to form the NFT.

Abstract: A method for forming a fine pattern using isotropic etching, includes the steps of forming an etching layer on a semiconductor substrate, and coating a photoresist layer on the etching layer, performing a lithography process with respect to the etching layer coated with the photoresist layer, and performing a first isotropic etching process with respect to the etching layer including a photoresist pattern formed through the lithography process, depositing a passivation layer on the etching layer including the photoresist pattern, and performing a second isotropic etching process with respect to the passivation layer. The second isotropic etching process is directly performed without removing the predetermined portion of the passivation layer.

Abstract: A method and system for providing an energy assisted magnetic recording (EAMR) transducer coupled with a laser are described. The laser provides energy. The EAMR transducer has an air-bearing surface (ABS) configured to reside in proximity to a media during use. The EAMR transducer includes a near field transducer (NFT) proximate to the ABS for focusing the energy onto the region of the media. The method and system include providing a heat sink having a bottom thermally coupled with the NFT and a top surface at an angle with respect to the ABS. The angle is greater than zero and less than ninety degrees. The method and system also include providing a write pole and at least one coil. The write pole is configured to write to a region of the media. The write pole has a bottom surface thermally coupled with the top surface of the heat sink. The at least one coil is for energizing 24.

Abstract: Methods of fabricating the fusible link are directed to processing a multi-layer clad foil having a first layer suitable for forming a fusible link and a second layer suitable for forming one or more welding pads. In some embodiments, the first layer is an aluminum layer and the second layer is a nickel layer. A two-step etching process or a single step etching process is performed on the clad foil to form an etched clad foil having multiple tabs made of the second layer used as current collector conductor pads and battery cell conductor pads, and one or more tabs made of the first layer that form aluminum conductors. The aluminum conductors are shaped and sized to form aluminum fusible conductors during either the etching process or a subsequent stamping process. A single fusible link or an array of fusible links can be formed.

Abstract: An etchant gas and a method for removing at least a portion of a late transition metal structure. The etchant gas includes PF3 and at least one oxidizing agent, such as at least one of oxygen, ozone, nitrous oxide, nitric oxide and hydrogen peroxide. The etchant gas provides a method of uniformly removing the late transition metal structure or a portion thereof. Moreover, the etchant gas facilitates removing a late transition metal structure with an increased etch rate and at a decreased etch temperature. A method of removing a late transition metal without removing more reactive materials proximate the late transition metal and exposed to the etchant gas is also disclosed.

Abstract: A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.

Abstract: A method for forming a micro-pattern in a semiconductor device includes forming a hard mask layer and a sacrificial layer over an etch target layer, forming a plurality of openings having a hole shape in the sacrificial layer, forming spacers over inner sidewalls of the openings to form first hole patterns inside the openings, etching the sacrificial layer outside of the sidewalls of the openings using the spacers in a manner that the sacrificial layer in a first area remains partially and the sacrificial layer in a second area is removed to form second hole patterns, wherein the first area is smaller than the second area, and etching the hard mask layer using the remaining sacrificial layer and the spacers including the first and second hole patterns.

Abstract: A staggered laser-etch line graphic system, method, and articles of manufacture are provided. One described method includes the steps of laser engraving a first plurality of lines associated with a first component section of a graphic on a surface of an article; laser engraving a second plurality of lines associated with a second component section of the graphic on the surface of the article; and controlling said laser engraving of the first plurality of lines and said laser engraving of second plurality of lines to reduce the visual impact of a demarcation line separating the first component section of the graphic and the second component section of the graphic.

Abstract: A drug-delivery chip and a method of fabricating the same are provided. The drug-delivery chip has a main body having at least one drug receiving space individually formed with an opening for storing drugs therein; a thin film for sealing up the at least one drug receiving space; a first conductive wire connecting to one end of the thin film; a second conductive wire connecting to another end of the thin film; a signal-receiving module for receiving actuated signals; and a control module for applying voltages to first and second wire conductive s according to the actuated signal, thereby generating heat to break off the thin film for the release of a drug or drugs received in the at least one drug receiving space.

Abstract: An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.

Abstract: The invention is directed to a chamfering apparatus for a silicon wafer to chamfer outer edge of a silicon wafer by using a chamfering grindstone, the chamfering apparatus including at least: a holder holding and rotating a silicon wafer; a chamfering grindstone chamfering the outer edge of the silicon wafer held by the holder; and a control apparatus for controlling a chamfered shape by controlling a relative position of the outer edge of the silicon wafer and the chamfering grindstone by numerical control, wherein the control apparatus controls and changes the relative position of the outer edge of the silicon wafer and the chamfering grindstone at the time of chamfering depending on the circumferential position of the silicon wafer held by the holder, a production method, and an etched silicon wafer.

Abstract: A method and system for fabricating magnetic recording transducer are described. The magnetic recording transducer has a main pole including a plurality of sides, an intermediate layer adjacent to the sides of the main pole, and a field region distal from the main pole. The method and system include providing at least one trench in the intermediate layer. The trench(es) are between the main pole and the field region. The method and system also include providing a stop layer. A portion of the stop layer resides in at least part of the trench(es) and on at least part of the field region. The method and system also include removing a portion of the intermediate layer using a wet etch. The stop layer is resistant to removal by the wet etch. The method and system also include depositing a full wrap-around shield layer on the main pole.

Abstract: A method for bonding a sheath made of a first metallic material to an airfoil made of a second metallic material includes treating the bonding surface of the airfoil; treating the bonding surface of the sheath; placing an adhesive between the bonding surfaces of the airfoil and the sheath; and pressing the airfoil and sheath together so that the adhesive bonds the sheath to the airfoil.

Abstract: A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stresses. The elastomeric sheet comprises a silicone adhesive to withstand a high shear strain of ?800% at a temperature range between room temperature and 300° C. such as heat curable high molecular weight dimethyl silicone with optional fillers. The sheet form has bond thickness control for parallelism of bonded surfaces. The sheet adhesive may be cut into pre-form shapes to conform to regularly or irregularly shaped features, maximize surface contact area with mating parts, and can be installed into cavities. Installation can be manually, manually with installation tooling, or with automated machinery. Composite layers of sheet adhesive having different physical properties can be laminated or coplanar.

Abstract: Provided is a method of manufacturing a see-through-type integrated solar cell and a method of manufacturing the same. The method comprises forming a first conductive material being apart and strip patterned on a transparent substrate so that the first conductive material comprises a predetermined space for enabling light to directly pass through the transparent substrate, forming a solar cell (semiconductor) layer, obliquely depositing a second conductive material and etching the solar cell layer using the second conductive material layer as a mask.

Abstract: A catheter body having a variable stiffness along its longitudinal length and a method for manufacturing same is disclosed wherein an inner layer having an uninterrupted length serves as a backbone for segments of coextrusion of, e.g., Pebax or nylon and a tie layer which are then bonded to the backbone to create a multi-stiffness catheter body.

Abstract: A method of manufacturing a tunable wavelength optical filter. The method includes steps of forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate; sequentially laminating conductive silicon films and oxide films for defining a mirror region on the first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror; sequentially laminating conductive silicon films and oxide films for defining the mirror region on a second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror and forming an optical tuning space between the lower mirror and the upper mirror and etching the first sacrificial oxide film and the second sacrificial oxide film such that the lower mirror is floated on the semiconductor substrate.