Patents Examined by Shamm Ahmed
  • Patent number: 6451218
    Abstract: A new and improved etching solution and etching method provide wet chemical pyramidal texture etching of (100) silicon surfaces. A uniform and completely pyramidal texture etching of silicon surfaces is achieved with an etching solution including water, an alkaline reagent, and isopropanol together with an aqueous alkaline ethylene glycol solution.
    Type: Grant
    Filed: March 18, 1999
    Date of Patent: September 17, 2002
    Assignee: Siemens Solar GmbH
    Inventor: Konstantin Holdermann
  • Patent number: 6440320
    Abstract: A substrate processing method and apparatus capable of uniformly supplying a processing liquid to a substrate surface in substrate processing such as development processing without exerting an influence on the physical properties of the processing liquid and without damaging the substrate. A rotating blade is disposed above the horizontally placed substrate so as to face the substrate. The processing liquid is supplied to the surface of the substrate, and the rotating blade is rotated while being kept out of contact with the processing liquid to induce a gas current. The gas current forms a mass of processing liquid having an internal circulating current on the substrate surface below the rotating blade.
    Type: Grant
    Filed: October 10, 2000
    Date of Patent: August 27, 2002
    Assignee: Ebara Corporation
    Inventor: Hiroyuki Shinozaki
  • Patent number: 6428719
    Abstract: Write head coils for magnetic disk systems are commonly formed through electroplating onto a seed layer in the presence of a photoresist mask. It is then necessary to remove the seed layer everywhere except under the coil itself. The present invention achieves this through etching in a solution of ammonium persulfate to which has been added the complexing agent 1,4,8,11 tetraazundecane. This suppresses the reduction of Cu++ to Cu, thereby increasing the dissolution rate of copper while decreasing that of nickel-iron. Two ways of implementing this are described—adding the complexing agent directly to the ammonium persulfate and introducing the 1,4,8,11 tetraazundecane through a dipping process that precedes conventional etching in the ammonium persulfate.
    Type: Grant
    Filed: January 19, 2000
    Date of Patent: August 6, 2002
    Assignee: Headway Technologies, Inc.
    Inventors: Xuehua Wu, Wensen Li, Si-Tuan Lam, Henry C. Chang, Kochan Ju, Jei-Wei Chang
  • Patent number: 6068787
    Abstract: A chemical mechanical polishing precursor comprising at least one catalyst having multiple oxidation states, and at least one stabilizer, the composition being useful when admixed with an oxidizing agent prior to use to remove metal layers from a substrate.
    Type: Grant
    Filed: July 11, 1997
    Date of Patent: May 30, 2000
    Assignee: Cabot Corporation
    Inventors: Steven K. Grumbine, Christopher C. Streinz, Brian L. Mueller
  • Patent number: 5985162
    Abstract: A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is formed over the substrate a dielectric layer which has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer in contact with the first surface of the dielectric layer. Similarly, there is also formed over the substrate a soft adjacent layer (SAL) in contact with the second surface of the blanket dielectric layer, where the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the dielectric layer are planar and preferably at least substantially co-extensive. The invention contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method of the invention.
    Type: Grant
    Filed: March 5, 1997
    Date of Patent: November 16, 1999
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Kochan Ju