Abstract: A process for removing support material from a part made by an additive manufacturing process is disclosed. The part may be arranged in a media filled tank. Ultrasonic waves are directed for the part and/or support material. Ultrasonic waves from an ultrasonic transducer are applied to a part or support material and cause the part to vibrate. The frequency of the ultrasonic energy may be tuned to cause the part and/or the support material to vibrate at its resonant frequency. The support material may have different properties, such as density, geometry, material, or porosity. Such differences may allow the support material to resonate in response to the applied ultrasonic energy waves at a different ultrasonic frequency than, the part itself.

Abstract: The present invention relates to cleaning compositions and methods employing a water soluble magnesium compound. Such compositions can be used for reducing scale, rinsing, hard surface cleaning, ware washing, and corrosion inhibition.

Abstract: A surface treatment process for a metal article includes the following steps. Firstly, a metal article, made of at least one of copper and an alloy thereof, is provided. Secondly, a surface of the metal article is degreased. Thirdly, the surface of the metal article is activated in an acid solution. Finally, the surface of the metal article is deactivated by submersion in an antioxidant agent.

Abstract: For cleaning a wafer by a cleaning apparatus, a cleaning liquid is contained in a cleaning bath. Leaving two brushes open, the wafer is inserted to the cleaning bath, placed on oscillation and rotation rollers and retained by the rollers. The brushes are closed and the wafer is held by the brushes. Next, the two brushes are rotated while the wafer is oscillated and rotated by the rollers and so on. Furthermore, ultrasonic vibrations are applied to the cleaning liquid in the cleaning bath by an ultrasonic generator. Scrub cleaning with the two brushes and ultrasonic cleaning by ultrasonic vibrations are thereby performed on the wafer.