Abstract: A europium-doped ?-sialon phosphor, in which, when the ratio of an aluminum element at a depth of 8 nm from the surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P8 [at %], and the ratio of an aluminum element at a depth of 80 nm from the surface of the phosphor is indicated by P80 [at %], P8/P80?0.9 is satisfied. A light emitting device containing this ?-sialon phosphor.

Abstract: An object of the present technology is to prevent damage in a bonded portion between a semiconductor chip and a substrate in a semiconductor device in which the semiconductor chip is mounted on the substrate. A terminal is disposed between an electrode of an element and an electrode of a substrate on which the element is mounted, and electrically connects the electrode of the element and the electrode of the substrate. The terminal includes a plurality of unit lattices and a coupling portion. The unit lattices included in the terminal are formed by bonding a plurality of beams in a cube shape. The coupling portion included in the terminal couples adjacent unit lattices among the plurality of unit lattices.

Abstract: An integrated circuit including a chip substrate having an upper isolation layer with a pad thereon and a coil located below the pad, where, in a dimension perpendicular to a surface of the chip substrate, a perimeter of the coil overlaps with a perimeter of the pad.

Abstract: There is a method of manufacturing a memory device. The method includes forming a mask layer on an etching target layer; forming, on the mask layer, a compensation layer with a second impurity that chemically bonds to the mask layer with a first impurity; performing a first etching process that patterns the compensation layer and the mask layer to form a mask pattern; and performing a second etching process that etches the etching target layer, which is exposed through openings of the mask pattern.

Abstract: An overlapping assembly substrate structure for semiconductor light emitting devices, includes a first assembly substrate structure and a second assembly substrate structure disposed spaced apart from each other. The first assembly substrate structure can include a first electrode and a second electrode spaced apart by a first distance and a first partition wall having a circular first assembly hole to accommodate a semiconductor light emitting device having a circular shape. Further, the second assembly substrate structure can include a third electrode and a fourth electrode spaced apart by a second distance greater than the first distance and a second partition wall having an elliptical second assembly hole to accommodate a semiconductor light emitting device having an elliptical shape.

Abstract: An optoelectronic device includes pixels that each have at least one primary sub-pixel having a primary light-emitting diode formed on a support face a substrate provided with a first primary semiconductive portion that has an overall elongated wire-like shape having a top end, a primary lattice parameter accommodation layer arranged on the top end of the first primary semiconductive portion, a second primary active semiconductive portion arranged at least on the primary lattice parameter accommodation layer, and a third primary semiconductive portion arranged on the second primary active semiconductive portion. The primary lattice parameter accommodation layer has, with the second primary active semiconductive portion, a first difference in primary lattice parameters between 2.12% and 0.93% relative to the second primary active semiconductive portion.

Abstract: An optical device useful for spatial light modulation.

Abstract: A manufacturing method of an electronic apparatus is provided, and the manufacturing method includes following steps. A substrate is provided. A plurality of first bonding pads are formed on the substrate. A plurality of electronic devices are provided, and each of the electronic devices includes at least one second bonding pad. The second bonding pads of the electronic devices corresponding to the first bonding pads are laminated onto the corresponding first bonding pads on the substrate, so as to bond the electronic devices to the substrate. The corresponding first and second bonding pads respectively have bonding surfaces with different surface topographies. The manufacturing method of the electronic apparatus is capable of reducing short circuit during a bonding process or improving a bonding yield.

Abstract: An embodiment of the application discloses a panel and a manufacturing method thereof. In the panel, a thin-film transistor layer, a first conductive layer, a light-emitting diode (LED), and a second conductive layer are sequentially disposed on a substrate. The LED includes a first end and a second end. The first end is disposed on the first electrode. The second end is disposed on the second electrode. The second conductive layer includes a first conductive portion and a second conductive portion. The first conductive portion is electrically connected to the first end and the first electrode. The second conductive portion is electrically connected to the second end and the second electrode.

Abstract: A semiconductor device includes a silicon substrate, a first layer, a second layer, a barrier metal, and a gate pad. The first layer is formed of an oxide film provided on an upper surface of the silicon substrate. The second layer is a layer at least selectively having a projecting and recessed part on an upper surface of the first layer, the projecting and recessed part having a projection and recess deeper than a projection and recess occurring when the layer is formed in a planar shape. The barrier metal is formed on an upper surface of the second layer according to a shape of the projecting and recessed part. The gate pad is in close contact with the silicon substrate via the barrier metal.

Abstract: A semiconductor package includes a first power electronics carrier including a structured metallization layer disposed on an electrically insulating substrate, a power semiconductor die mounted on the first power electronics carrier, and a first pair of metal pads that are immediately laterally adjacent one another and are low-voltage difference nodes of the semiconductor package, a second pair of metal pads that are immediately laterally adjacent one another and are high-voltage difference nodes of the semiconductor package, and an encapsulant body of electrically insulating material that encapsulates the power semiconductor die and the first and second pairs of metal pads, wherein the first pair of the metal pads are laterally isolated from one another by a first minimum separation distance, and wherein the second pair of the metal pads are laterally isolated from one another by a second minimum separation distance that is greater than the first minimum separation distance.

Abstract: Embodiments disclosed herein include optical packages. In an embodiment, an optical package comprises a package substrate and a compute die on the package substrate. In an embodiment, an optics die is on the package substrate, and an integrated heat spreader (IHS) is over the compute die and the optics die. In an embodiment, channels are disposed on a surface of the IHS facing the package substrate.

Abstract: A display device according to the present disclosure includes a substrate including a display area, and at least one non-display area; a light emitting element disposed on the substrate; a first thin film transistor including a first semiconductor layer, a first gate electrode, and a first source electrode and a first drain electrode; a second thin film transistor including a second semiconductor layer, a second gate electrode, and a second source electrode and a second drain electrode; a separation structure located in the non-display area and provided to disconnect an organic light emitting layer of the light emitting element; and a first upper interlayer insulating layer, a second upper interlayer insulating layer, and a third upper interlayer insulating layer interposed between the second gate electrode and the second source electrode and the second drain electrode of the second thin film transistor, and sequentially disposed.

Abstract: An IC device includes an interlayer dielectric (ILD), a first tower structure embedded in the ILD, and a first ring region including a portion of the ILD that extends around the first tower structure. The first tower structure includes a plurality of first conductive patterns in a plurality of metal layers, and a plurality of first vias between the plurality of metal layers along a thickness direction of the IC device. The plurality of first conductive patterns and the plurality of first vias are coupled to each other to form the first tower structure. The plurality of first conductive patterns is confined by the first ring region, without extending beyond the first ring region. The first tower structure is a dummy tower structure.

Abstract: Electronic neural circuit including at least one pre-neuron having an output voltage VAout, and at least one post-neuron that are linked by at least one excitatory synapse having at least one switching input, wherein the excitatory synapse is supplied with power by the output VAout, and receives, on its switching input, a switching signal VAout_bar whose state is complementary to that of the output VAout.

Abstract: The present application provides a display substrate, a display panel, and a display device. The display substrate includes a substrate layer. The substrate layer includes a first substrate portion and a second substrate portion joined to each other. The first substrate portion is made of a first substrate material and configured to be disposed opposite to a photosensitive element. The second substrate portion is made of a second substrate material. A light transmittance of the first substrate material is larger than or equal to a light transmittance threshold, and a light transmittance of the second substrate material is smaller than the light transmittance threshold.

Abstract: An electro-optical device includes a first light-emitting element configured to emit light in a first wavelength region, a second light-emitting element configured to emit light in a second wavelength region shorter than the first wavelength region, a third light-emitting element configured to emit light in a third wavelength region shorter than the second wavelength region, a first filter configured to transmit light in the first wavelength region and light in the second wavelength region and absorb light in the third wavelength region, and a second filter configured to transmit light in the second wavelength region and light in the third wavelength region and absorb light in the first wavelength region.

Abstract: A semiconductor device package and a fabrication method thereof are disclosed. The semiconductor package comprises: a package component having a first mounting surface and a second mounting surface; and a first electronic component having a first conductive pad signal communicatively mounted on the first mounting surface through a first type connector; wherein the first type connector comprises a first solder composition having a lower melting point layer sandwiched between a pair of higher melting point layers, wherein the lower melting point layer is composed of alloys capable of forming a room temperature eutectic.

Abstract: A semiconductor die includes a substrate including a semiconductor surface including circuitry electrically connected to die bond pads that include a first die bond pad exposed by a passivation layer, a top dielectric layer over the passivation layer, and a metal layer electrically connected to the first die bond pad. A pillar is on the metal layer over the first die bond pad, and a solder cap is on a top side of the pillar. The solder cap includes an essentially vertical sidewall portion generally beginning at a top corner edge of the pillar.

Abstract: A semiconductor package includes a substrate, a first insulation layer, a conductive via and a conductive trace. The substrate includes a conductive component. The first insulation layer is formed on the substrate and having a first through hole exposing the conductive component. The conductive via is formed within the first through hole. The conductive trace is directly connected to the conductive via which is located directly above the first through hole.