Abstract: A photomask blank has a chemically amplified negative resist film comprising (A) a polymer comprising recurring units of specific structure and recurring units having fluorine, (B) a base resin adapted to reduce its solubility in alkaline developer under the action of acid, (C) an acid generator, and (D) a basic compound. The resist film is improved in receptivity to antistatic film.

Abstract: A radiation-sensitive composition containing a resist compound having a high sensitivity, a high resolution, a high etching resistance, and a low outgas which forms a resist pattern with a good shape is described.

Abstract: The present disclosure provides a sensitive material. The sensitive material comprises a copolymer that includes polymer units including a hydrophobic unit; a hydrophilic unit comprising an acid generator; and a connection unit bonded between the hydrophobic unit and the hydrophilic unit, the connection unit comprising an acid-labile group.

Abstract: Polymeric reaction products of certain substituted tetraarylmethane monomers are useful as underlayers in semiconductor manufacturing processes.

Abstract: The present invention relates to a photo-curable and thermo-curable resin composition which can form a DFSR having micro unevenness on the surface without a separate treatment such as plasma treatment and the like and a DFSR. The photo-curable and thermo-curable resin composition includes an acid-modified oligomer having a carboxyl group (—COOH) and a photo-curable unsaturated functional group; a polyimide-based resin; a photo-polymerizable monomer having two or more photo-curable unsaturated functional groups; a thermo-curable binder having a thermo-curable functional group; and a photoinitiator.

Abstract: A resist composition include (A1) a resin which includes a structural unit represented by formula (a4), and which resin has neither an acid-labile group nor an aromatic ring, (A2) a resin having an acid-labile group, and an acid generator, wherein R3 represents a hydrogen atom or a methyl group, R4 represents a C1 to C24 saturated hydrocarbon group having a fluorine atom, and a methylene group contained in the saturated hydrocarbon group may be replaced by an oxygen atom or a carbonyl group; and a structural unit having a ketone group.

Abstract: A compound represented by formula (I), a resin including a structural unit derived from the compound and a resist composition including the resin: wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group in which a hydrogen atom may be replaced by a halogen atom, R2 represents a C1 to C12 fluorinated saturated hydrocarbon group, A1 represents a single bond, a C1 to C6 alkanediyl group or *-A3-X1-(A4-X2)a-(A5)b-, * represents a binding site to an oxygen atom, A2, A3, A4 and A5 each independently represent a C1 to C6 alkanediyl group, X1 and X2 each independently represent —O—, —CO—O— or —O—CO—, W1 represents a C5 to C18 divalent alicyclic hydrocarbon group, a represents 0 or 1, and b represents 0 or 1.

Abstract: Disclosed are a composite white pigment and a photoresist material. The composite white pigment includes particles, each of the particles includes an inner core including a non-white pigment and an outer layer including a white pigment and coating the inner core. The photoresist material includes the following components: 5 to 15 parts by weight of a photosensitizing agent, 5 to 15 parts by weight of a dispersant, 50 to 80 parts by weight of a solvent, and 5 to 15 parts by weight of the composite white pigment.

Abstract: There are provided A pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific 3 repeating units.

Abstract: A heat- or photo-curable composition comprising: a polysiloxane which is produced by reacting a silicon compound (i) represented by the formula: R1nSi(X)4-n (wherein R1 represents an alkyl group, an aryl group or the like; X represents a chlorine atom or an alkoxy group; and n represents 0 to 2) with a silicon compound (ii) represented by the formula (b) or (c) (wherein R2 to R7 independently represent an alkyl group or the like; M1 and M2 independently represent an arylene group, an alkylene group or the like; and Y1 to Y6 independently represent a chlorine atom or an alkoxy group) in the presence of an alkali catalyst or an acid catalyst; a polymerization initiator which enables the generation of an acid or a base by the action of heat or light; and a solvent. The composition enables the formation of a thick film. When the composition is coated onto a substrate, is then heated or exposed to light, is then developed if necessary, and is then heated and cured at a low temperature, a cured film can be formed.

Abstract: Embodiments relate to a delayed fluorescence compound and a display device including the delayed fluorescence compound. The delayed fluorescence compound includes an electron acceptor moiety of benzo[4,5]thieno[2,3-b]quinoxaline and at least one electron donor moiety covalently bonded to the electron acceptor moiety. The at least one electron donor moiety is covalently bonded to a benzene ring of benzo[4,5]thieno[2,3-b]quinoxaline and is selected from carbazole, phenylcarbazole, acridine, and phenylacridine. The effective charge transfer in the delayed fluorescence compound results in improved emitting efficiency of the compound.

Abstract: In a resist pattern forming process, a rinse solution comprising (A) a heat/acid-decomposable polymer and (B) an organic solvent is effective. The pattern forming process using the rinse solution is successful in forming fine feature size patterns while minimizing the occurrence of pattern collapse.

Abstract: The resist composition according to the present invention is a resist composition comprising a solid component comprising a resist base material, and a solvent. In the resist composition according to the present invention, the resist composition contains 1 to 80% by mass of the solid component and 20 to 99% by mass of the solvent, the resist base material comprises a compound (ctt form) represented by a predetermined formula (1) and a compound represented by a predetermined formula (3), the proportion of the compound (ctt form) represented by the predetermined formula (1) to the resist base material is from 65 to 99% by mass, and the mass ratio of the compound represented by the predetermined formula (3) to the compound (ctt form) represented by the predetermined formula (1) is from 0.01 to 0.53.

Abstract: Provided are a photocurable and thermocurable resin composition including: an acid-modified oligomer including an iminocarbonate-based compound containing a carboxyl group and a photocurable unsaturated functional group; a photopolymerizable monomer having two or more photocurable unsaturated functional groups; a thermocurable binder having a thermally curable functional group; a functional filler including one or more selected from the group consisting of carbon allotrope particles having a ceramic compound bound to a surface thereof and heat radiating ceramic particles; and a photoinitiator, and a dry film solder resist manufactured therefrom.

Abstract: A positive resist composition is provided comprising (A) a resin comprising recurring units having adamantane ring and recurring units having cyclopentyl so that the resin may increase its alkali solubility under the action of acid, (B) a mixture of sulfonium salts, and (C) a solvent. By coating the resist composition as a resist film, forming a protective film thereon, and effecting immersion lithography, a pattern of good profile is formed at a high resolution.

Abstract: Provided are chemically amplified resist compositions that include acid-labile sulfonate-ester photoresist polymers that are developable in an organic solvent. The chemically amplified resists produce high resolution positive tone development (PTD) and negative tone development (NTD) images depending on the selection of organic development solvent. Furthermore, the dissolution contrast of the traditional chemically amplified resists may be optimized for dual tone imaging through the addition of a photoresist polymer comprising an acid-labile sulfonate-ester moiety.

Abstract: A salt represented by formula (I): wherein R1 and R2 independently represent a hydrogen atom, a hydroxy group or a C1 to C12 hydrocarbon group in which a methylene group may be replaced by a —O— or —CO—; m and n independently represent 1 or 2; Ar represents an optionally substituted phenyl group; Q1 and Q2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group, A1 represents a single bond, a C1 to C24 alkanediyl group or the like, and Y represents an optionally substituted C1 to C18 alkyl group or monovalent C3 to C18 alicyclic hydrocarbon group, and a methylene group therein may be replaced by a —O—, O— or —SO2—, provided that the alkyl group or the alicyclic hydrocarbon group has at least one substituent, or at least one methylene group contained therein is replaced by a —O—, —CO— or —SO2—.

Abstract: Provided are a novel negative chemically-amplified photoresist and an imaging method thereof. The negative chemically-amplified photoresist comprises phenol resin, a photo-acid generator, a cross-linking agent, an alkaline additive, a sensitizing agent and a photoresist solvent, wherein the phenol resin is a host material of the novel negative chemically-amplified photoresist; the photo-acid generator is capable of generating an acid with a certain strength under illumination; and the cross-linking agent can undergo a condensation reaction with a phenolic hydroxyl group or an ortho-/para-hydroxymethyl functional group. The imaging method of the novel negative chemically-amplified photoresist comprises coating, baking, exposure, baking, developing and other steps. The chemically-amplified negative photoresist of the present invention can improve the resolution and photospeed of photoresists effectively.

Abstract: There is provided a pattern forming method, including: (1) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, (2) exposing the film with actinic ray or radiation, (3) developing the film exposed by using a developer containing an organic solvent, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin having a repeating unit (R) with a structural moiety capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid, and (B) a solvent, and the developer contains an additive that causes at least one interaction selected from the group consisting of an ionic bond, a hydrogen bond, a chemical bond and a dipole interaction with respect to a polar group contained in the resin (A) after the exposing.

Abstract: There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising: a hydrolyzable organosilane having a urea group; a hydrolysis product thereof; or a hydrolysis-condensation product thereof.