Abstract: A stimulus-sensitive composition comprising a compound (A) that generates one of an acid and a radical by external stimulation, the compound (A) having a specific structure.

Abstract: A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.

Abstract: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect. wherein m is an integer ranging from 5 to 5000.

Abstract: A resist curable resin material composed mainly of a curable prepolymer (for example, a photocurable resin material comprising a photosensitive prepolymer having an ethylenically unsaturated terminal group originating in an acrylic monomer (A), a compound having an ethylenically unsaturated group excluding the photosensitive prepolymer (B), and a photopolymerization initiator (C)) and a flame-retarding agent containing a hydrated metal compound and a brominated epoxy compound are mixed to produce a resist curable resin composition. Alternatively, the resist curable resin material described above and a hydrated metal compound surface-treated with a surface treating agent having an amphipathic property and a polarity are mixed to produce a resist curable resin composition.

Abstract: Polymerizable silicon-containing compounds of formula (1) wherein R1 is hydrogen, halogen or monovalent organic group are polymerized into polymers.

Abstract: A composition comprising a polymer according to Structure 1 wherein R is H, Me, Et or C6H5; R? is H or Me; R? is H or Me; n=1 to 100; and Z=1 to 3, is disclosed. The composition can be cured and used in a wide range of articles such as a photopolymer printing plate, sealant, caulk, encapsulent, road marking paint, photoresist, binder, impact modifier, polymer modifier, oxygen or water vapor barrier coating, conformal coating, solder mask, pigment dispersion, stereolithograph, laminating resin, grafted co-polymer, composite, optical fiber coating, paper coating, metal coating, glass coating, plastic coating, wood coating, waterproofing material, electrical insulating material, automotive belt or hose, tire, engine mount, gasket, golf ball core, and rubber roll.

Abstract: Carborane based PAG's are bulky, produce a strong and large superacid, and have polarities that are compatible with the chemically amplified polymers typically used in photoresists. Carborane based PAG's also provide another broad class of bulky PAG's that may be used in photoresist formulations that offer flexibility in acid strength and polarity through changes in chemical structure. These PAG's may be used with EUV wavelengths, 157 nm, or 193 nm. Resolution and critical dimension control may be improved through the use of carborane based PAG's.

Abstract: Photoresist compositions that contain one or more components having sulfonamide and Si substitution. Preferred photoresist compositions of the invention contain an Si-polymer such as a silsesquioxane that has sulfonamide substitution and may be employed in multilayer resist systems. In preferred aspects, the Si-polymer has both sulfonamide substitution as well as moieties that can provide contrast upon exposure to photogenerated acid.

Abstract: There is disclosed a polymer which at least has the repeating unit represented by the following general formula (1a), and the repeating unit represented by the following general formula (1b) and/or the repeating unit represented by the following general formula (1c), and a positive resist composition comprising the polymer as a base resin.

Abstract: Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of the bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Abstract: A lithographic printing plate precursor comprises an image-forming layer containing a polymerization initiator and a polymerizable compound, and a hydrophilic support, wherein the lithographic printing plate precursor comprises a compound containing at least one functional group having an interaction with a surface of the hydrophilic support.

Abstract: A radical polymerizable composition comprising (A) an alkali-soluble resin containing a radical polymerizable group, (B) a radical polymerizable compound, and (C) a radical initiator, wherein reactivity of a polymerizable group of the polymerizable compound 4B) to a polymerizable group of the polymerizable compound (B) is larger than reactivity of a polymerizable group of the polymerizable compound (B) to a radical polymerizable group of the alkali-soluble resin (A), and a reactivity of a radical polymerizable group of the alkali-soluble resin (A) to a polymerizable group of the polymerizable compound (B) is larger than reactivity of a radical polymerizable group of the alkali-soluble resin (A) to a radical polymerizable group of the alkali-soluble resin (A).

Abstract: A resin which comprises (1) at least one structural unit selected from the group consisting of a structural unit derived from 3-hydroxy-1-adamantyl (meth)acrylate, a structural unit derived from 3,5-dihydroxy-1-adamantyl (meth)acrylate, a structural unit derived from (meth)acryloyloxy-?-butyrolactone having a lactone ring optionally substituted by alkyl, a structural unit of the formula (Ia) and a structural unit of the formula and (2) a structural unit of the formula (II) and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid; and also provides a chemical amplification type positive resist composition comprising a resin defined above and an acid generator.

Abstract: The present invention provides an imageable element including a lithographic substrate and an imageable layer disposed on the substrate. The imageable layer includes a radically polymerizable component, an initiator system capable of generating radicals sufficient to initiate a polymerization reaction upon exposure to imaging radiation, and a polymeric binder having a hydrophobic backbone and including both constitutional units having a pendant cyano group attached directly to the hydrophobic backbone, and constitutional units having a pendant group including a hydrophilic poly(alkylene oxide) segment. The invention also provides a method for preparing a suitable polymeric binder. The method comprises contacting a combination of co-monomers in a solvent mixture consisting essentially of a (C1–C6) alkanol and water.

Abstract: Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.

Abstract: The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R7 is a methylene group, an oxygen atom, a sulfur atom or —SO2—; R8, R9, R10 and R11 are the same or different and are a hydrogen atom, a f

Abstract: A positive type colored photosensitive resin composition containing an alkali-soluble copolymer resin which comprises repeating units derived from styrene and repeating units derived from hydroxystyrene, a ratio (molar ratio) of the latter repeating units to the former repeating units is from 1:0.7 to 1:20 and has a polystyrene-converted weight average molecular weight of 6,000 to 15,000.

Abstract: A photosensitive metal nanoparticle and a method of forming a conductive pattern using the same, wherein a self-assembled monolayer of a thiol compound or isocyanide compound having a terminal reactive group is formed on a surface of the metal nanoparticle and a photosensitive group is introduced to the terminal reactive group. The photosensitive metal nanoparticles can easily form a conductive film or pattern having excellent conductivity upon exposure to UV, and thus can be applied for antistatic washable sticky mats or shoes, conductive polyurethane printer rollers, electromagnetic interference shielding, etc.

Abstract: According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.

Abstract: A photosensitive resin composition of the present invention comprises (A) a resin having a repeating unit represented by formula (IA) and a repeating unit containing an acid decomposable group and copolymerizable with formula (IA), which is decomposed under the action of an acid to increase the solubility in an alkali developer, (B1) a compound capable of generating an aliphatic or aromatic sulfonic acid substituted by at least one fluorine atom upon irradiation with actinic rays or radiation, (B2) a compound capable of generating an aliphatic or aromatic sulfonic acid containing no fluorine atom, or an aliphatic or aromatic carboxylic acid upon irradiation with actinic rays or radiation, and (C) a solvent.