Abstract: A memory device includes a memory cell array having a plurality of memory cell strings, and a plurality of bit lines connected to at least one of the plurality of memory cell strings; and a plurality of page buffers connected to the plurality of bit lines, wherein each of the plurality of page buffers includes a plurality of latches sharing one data transfer node and exchanging data with each other through the data transfer node; and a pass transistor setting a connection between the data transfer node and another data transfer node of another page buffer.

Abstract: A method for forming a tantalum oxynitride film which is used as a high-permittivity dielectric film of a semiconductor device. In the method of the present invention, a tantalum-containing film is first formed on a semiconductor substrate, and then the tantalum-containing film is converted into a tantalum oxynitride film using a heat treatment or a plasma treatment in a reactive gas. According to the method of the present invention, the tantalum oxynitride film can be easily formed using process conditions established in prior art processes.