Abstract: An interconnect level is provided on a surface of a substrate that has improved crack stop capability. The interconnect level includes at least one wiring region including an electrically conductive structure embedded in an interconnect dielectric material having a dielectric constant of less than 4.0, and a crack stop region laterally surrounding the wiring region. The crack stop region includes a crack stop dielectric material having a dielectric constant greater than the dielectric constant of the interconnect dielectric material. The crack stop region may be devoid of any metallic structure, or it may contain a metallic structure. The metallic structure in the crack stop region, which is embedded in the crack stop dielectric material, may be composed of a same, or different, electrically conductive metal or metal alloy as the electrically conductive structure embedded in the interconnect dielectric material.