Patents Examined by Srinivas Sathiraju
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Patent number: 12295091Abstract: The present application provides a method for obtaining strong focusing of an isochronous accelerator by varying the magnetic field gradient in a large radial range. The method is characterized by the main magnet of the isochronous accelerator providing not only a bending effect but also a focusing effect, equivalent to the effects of quadrupole, sextupole, and octupole magnets used in a synchrotron accelerator.Type: GrantFiled: June 27, 2023Date of Patent: May 6, 2025Assignee: CHINA INSTITUTE OF ATOMIC ENERGYInventors: Tianjue Zhang, Wei Fu, Chuan Wang
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Patent number: 12293898Abstract: A plasma ignition detection device for connecting to an impedance matching circuit for a plasma generation system is configured to process first time-variant measured values from a first predetermined location of the impedance matching circuit. An applied first reactive and/or active power is capable of being determined from the first time-variant measured values. The plasma ignition detection device is further configured to process second time-variant values associated with a second location of the impedance matching circuit, the second location being different to the first predetermined location. An applied second reactive and/or active power is capable of being determined from the second time-variant values.Type: GrantFiled: October 7, 2024Date of Patent: May 6, 2025Assignee: TRUMPF HÜTTINGER GMBH + CO. KGInventor: Florian Maier
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Patent number: 12289820Abstract: A plasma-generation system is provided that includes a variable-frequency microwave generator configured to generate microwave power and a plasma applicator configured to use the microwave power from the microwave generator to (i) ignite a process gas therein for initiating a plasma in a plasma ignition process and (ii) maintain the plasma in a steady state process. The system also includes a coarse tuner connected between the microwave generator and the plasma applicator. At least one physical parameter of the coarse tuner is adapted to be set to achieve coarse impedance matching between the microwave generator and the plasma generated during both the plasma ignition process and the steady state process. A load impedance of the plasma generated during the plasma ignition process and the steady state process is adapted to vary. The microwave generator is configured to tune an operating frequency at the set physical parameter of the coarse tuner.Type: GrantFiled: February 26, 2024Date of Patent: April 29, 2025Assignee: MKS Instruments, Inc.Inventors: Ilya Pokidov, Mohammad Kamarehi, Kenneth B. Trenholm, Fedir Viktorovych Teplyuk
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Patent number: 12283463Abstract: Systems and methods for multi-level pulsing are described. The systems and methods include generating four or more states. During each of the four or more states, a radio frequency (RF) generator generates an RF signal. The RF signal has four or more power levels, and each of the four or more power levels corresponds to the four or more states. The multi-level pulsing facilitates a finer control in processing a substrate.Type: GrantFiled: April 24, 2020Date of Patent: April 22, 2025Assignee: Lam Research CorporationInventors: Ying Wu, Maolin Long, John Drewery, Vikram Singh
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Patent number: 12283469Abstract: The invention relates to a high-frequency grounding device (40) for use with a vacuum valve for closing and opening a valve opening of a vacuum chamber system, having a grounding band (42) made of a conductive material for discharging electrical charges occurring on the vacuum valve, wherein the grounding band has a first end (41) and a second end (43) and, for grounding the vacuum valve, is designed to be connected at the first end to a valve closure of the vacuum valve, and to be connected at the second end to a component of the vacuum chamber system, wherein the high-frequency grounding device has a correction impedance, wherein the grounding band is coupled to the correction impedance so that a resonant circuit results, which comprises the grounding band and the correction impedance, and the correction impedance has a first element for shifting a resonant frequency of the resonant circuit and/or a second element for reducing a quality of the resonant circuit.Type: GrantFiled: May 16, 2022Date of Patent: April 22, 2025Assignee: VAT HOLDING AGInventors: Arthur Büchel, Adrian Weitnauer
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Patent number: 12284747Abstract: Disclosed are a hollow cathode discharge assistant transformer coupled plasma source and an operation method of the same. A reaction chamber with an annular channel is provided, and a ferrite transformer with a first ferrite magnetic core wound with a first coil and a second ferrite magnetic core wound with a second coil and a drive power source is provided. The drive power source applies an AC power supply with a first voltage to the first coil to generate an alternating magnetic field. The second coil generates a second voltage by inducing the alternating magnetic field to excite a working gas in the annular channel into a plasma through a hollow cathode discharge mechanism. The annular channel induces the alternating magnetic field through a transformer coupled plasma mechanism to generate an induced electric field to excite the plasma to form an electric current in the annular channel.Type: GrantFiled: July 12, 2023Date of Patent: April 22, 2025Assignee: Finesse Technology Co., Ltd.Inventor: Chwung-Shan Kou
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Patent number: 12283462Abstract: An apparatus for forming a plasma may include one or more coupling ports to accept a radiofrequency (RF) current. The apparatus may additionally include one or more coupling structures which may include one or more conductive loops to permit the RF current to conduct from at least a first portion of the one or more coupling ports to at least a second port of the one or more coupling ports. The one or more conductive loops may each be configured to exhibit a first value of inductance in the absence of the plasma and to exhibit a second value of inductance in the presence of the plasma. The one or more coupling structures may each include a reactive element, in which each reactive element is coupled to a corresponding one of the one or more conductive loops so as to form a corresponding number of coupling structures. Each RF coupling structure may have a resonant frequency that increases in response to the presence of the plasma.Type: GrantFiled: June 7, 2021Date of Patent: April 22, 2025Assignee: Lam Research CorporationInventors: Hema Swaroop Mopidevi, Lee Chen, Thomas W. Anderson, Shaun Tyler Smith, Neil M. P. Benjamin
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Patent number: 12283468Abstract: Methods and systems are provided for increasing energy output from Z-pinch and other plasma confinement systems. In one example, a system may include memory storing instructions that, if executed by one or more processors, cause the system to adjust one or more parameters to generate a magnetic field which is sufficiently strong to axially compress a fuel gas to induce thermonuclear fusion and increase a fusion energy gain factor greater than a fusion energy gain factor limit attainable by the thermonuclear fusion. In certain examples, adjusting the one or more parameters may include adjusting a duty cycle of a discharge current applied to the fuel gas based, at least in part, on an amount of thermal collisions between fusion byproducts and the fuel gas. In certain examples, by adjusting the duty cycle, the magnetic field may be adjusted to induce or increase the thermal collisions.Type: GrantFiled: November 15, 2023Date of Patent: April 22, 2025Assignee: Zap Energy, Inc.Inventors: Peter H. Stoltz, Eric T. Meier, Uri Shumlak, Brian A. Nelson
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Patent number: 12279358Abstract: According to one embodiment, a particle beam accelerator comprising: an injection unit configured to inject a particle beam; a guiding unit configured to guide the particle beam to a trajectory; an acceleration unit configured to accelerate the particle beam circulating on the trajectory; an emission unit configured to output the particle beam; a particle beam blocking unit configured to block the particle beam on the trajectory; a control unit configured to control the injection unit, the guiding unit, the acceleration unit, the emission unit, and the particle beam blocking unit, wherein: the guiding unit includes a superconducting electromagnet and a superconducting electromagnet interrupter configured to interrupt the superconducting electromagnet, the control unit is configured to change a starting sequence of the particle beam blocking unit and the superconducting electromagnet interrupter depending on at least an operating state of the emission unit, when an abnormality occurs in the superconducting eleType: GrantFiled: April 10, 2023Date of Patent: April 15, 2025Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Shigeki Takayama, Shinya Matsuda, Takayuki Sako, Tomofumi Orikasa
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Patent number: 12272536Abstract: This disclosure describes systems, methods, and apparatus for generating a control signal for one or more actuators that is adjusted from a control signal dictated by setpoints, where the adjustment accounts for predicted delays and amplitude errors. More specifically, cross correlation between measurements of the actuator(s) outputs and time-shifted setpoints can be optimized for a time-shift that minimizes the cross correlation. The time-shifted setpoints along with the measurements can then be used to determine an amplitude difference and to remove noise from the amplitude difference. Dynamic uncertainty can then be found from this denoised data set and further optionally used to find the noise that was removed. The time delay, noise, and dynamic uncertainty can be used to preemptively adjust the control signal.Type: GrantFiled: March 3, 2022Date of Patent: April 8, 2025Assignee: Advanced Energy Industries, Inc.Inventor: Chad S. Samuels
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Patent number: 12266503Abstract: A plasma source array is provided. The plasma source array includes a plurality of hybrid plasma sourcelets disposed on a base plate. Each hybrid sourcelet includes a dielectric tube having an inner area and an outer surface; an inductively coupled plasma source for generating a inductively coupled plasma disposed proximate to the outer surface of the dielectric tube; a capacitively coupled plasma source for generating a capacitively coupled plasma disposed within the inner area of the dielectric tube; and a gas injection system configured to supply one or more process gases to the inner area of the dielectric tube. Plasma processing apparatuses incorporating the plasma source array and methods of use are also provided.Type: GrantFiled: May 25, 2022Date of Patent: April 1, 2025Assignees: Beijing E-Town Semiconductor Technology Co., LTD, Mattson Technology, Inc.Inventor: Maolin Long
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Patent number: 12261023Abstract: The embodiments disclosed herein are directed to systems, methods, and devices for processing a material using a microwave plasma apparatus with an interior liner. In some embodiments, the liner comprises a reduction resistant material layer in direct contact with a hydrogen-containing plasma of a plasma processing apparatus. In some embodiments, the liner may comprise a sleeve disposed between a plasma and one or more concentric tubes of a plasma processing apparatus. In some embodiments, the liner may comprise a coating of material applied to the one or more concentric tubes. In some embodiments, the liner may comprise a flexible ceramic material, such as a ceramic ribbon that is coiled or wrapped in a helix shape spiraling around the interior of the one or more concentric tubes.Type: GrantFiled: May 19, 2023Date of Patent: March 25, 2025Assignee: 6K Inc.Inventors: Richard K. Holman, Saurabh Ullal
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Patent number: 12261019Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source circuitry, a first switch coupled between the voltage source circuitry and a first output node of the waveform generator, the first output node being configured to be coupled to a chamber, and a second switch coupled between the first output node and electrical ground node. The waveform generator also includes a third switch coupled between the voltage source circuitry and a second output node of the waveform generator, the second output node being configured to be coupled to the chamber, and a fourth switch coupled between the second output node and the electrical ground node.Type: GrantFiled: October 17, 2022Date of Patent: March 25, 2025Assignee: Applied Materials, Inc.Inventors: Kartik Ramaswamy, Yang Yang, Yue Guo
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Patent number: 12261022Abstract: The present disclosure provides a semiconductor process apparatus and a plasma ignition method. The semiconductor process apparatus includes a reaction chamber, an air inlet assembly configured to introduce the reaction gas into the reaction chamber, an upper electrode assembly configured to excite the reaction gas into the plasma, a monitor configured to monitor the electromagnetic radiation intensity of the plasma in the reaction chamber when the plasma is ignited, a controller configured to determine whether the electromagnetic radiation intensity monitored by the monitor reaches the preset intensity, if yes, determine that the plasma ignition is successful, and after the plasma ignition is successful, control the upper electrode assembly to perform the impedance matching of the first preset duration. In the present disclosure, the consistency of the process results may be improved to improve the uniformity of the products.Type: GrantFiled: November 23, 2021Date of Patent: March 25, 2025Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Jing Yang, Chenyu Zhong, Gang Wei
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Patent number: 12261027Abstract: There is provided a plasma processing apparatus for performing plasma processing or a substrate, comprising: a chamber; a substrate support disposed in the chamber and including a base, an electrostatic chuck on the base, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a Radio Frequency (RF) power supply for supplying RF power for generating plasma from gases in the chamber; a DC power supply for applying a negative DC voltage to the edge ring; a waveform control element for controlling a waveform of the DC voltage; and a controller for controlling a time taken for the DC voltage to reach a desired value by adjusting a constant of the waveform control element.Type: GrantFiled: September 15, 2022Date of Patent: March 25, 2025Assignee: TOKYO ELECTRON LIMITEDInventors: Natsumi Torii, Koichi Nagami, Chishio Koshimizu, Jun Abe
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Patent number: 12255050Abstract: The inventive concept provides an antenna member. In an embodiment, the antenna member includes a first coil and a second coil which have a rotational symmetry to each other, and wherein the first coil includes a first supply terminal applied with a current and a first ground terminal connected to the ground, the second coil includes a second supply terminal applied with the current and a second ground terminal connected to the ground, and wherein the first coil and the second coil each include a first portion having an arc-shape and a second portion having an arc-shape which as a whole form one winding, and when seen from a side, the second portion has a relatively lower height than the first portion, and the second portion of the second coil is positioned below the first portion of the first coil, and the second portion of the first coil is positioned below the first portion of the second coil.Type: GrantFiled: October 18, 2022Date of Patent: March 18, 2025Assignee: Semes Co., Ltd.Inventors: Yoon Seok Choi, Yun Sang Kim, Sun Wook Jung
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Patent number: 12256484Abstract: A system for plasma ignition and maintenance of an atmospheric pressure plasma. The system has a variable frequency alternating current (AC) power source, a transformer, a cable connected to a secondary winding of the transformer, a programmed microprocessor for control of power to the atmospheric pressure plasma. The microprocessor is configured to a) at pre-ignition, power the AC power source at an operational frequency fop higher than the resonant frequency fr, b) decrease the operational frequency fop of the AC power source until there is plasma ignition, and c) after the plasma ignition, further decrease the operational frequency fop of the AC power source to a frequency lower than the resonant frequency fr.Type: GrantFiled: October 18, 2021Date of Patent: March 18, 2025Assignee: Atmospheric Plasma Solutions, Inc.Inventor: Terrence E. Rogers
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Patent number: 12249486Abstract: In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.Type: GrantFiled: December 21, 2023Date of Patent: March 11, 2025Assignee: TOKYO ELECTRON LIMITEDInventor: Chishio Koshimizu
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Patent number: 12243726Abstract: The inventive concept provides a substrate treating apparatus.Type: GrantFiled: December 14, 2022Date of Patent: March 4, 2025Assignee: Semes Co., Ltd.Inventor: Jae-Won Shin
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Patent number: 12245352Abstract: A plasma generator includes a cathode, an anode, and a stabilizing electrode. The stabilizing electrode stabilises a region of plasma within a fluid. Methods of plasma generation and uses thereof are also provided.Type: GrantFiled: December 3, 2020Date of Patent: March 4, 2025Assignee: Ananda Shakti Technologies Ltd.Inventors: Vladimir Leonov, Sergei Altunin, Oleg Kulakovskii, Haslen Matthew Back, Valeria Tyutina