Abstract: A wafer is produced from a compound single crystal ingot having end surface. A separation plane is formed by setting the focal point of a laser beam inside the ingot at a predetermined depth from the end surface. The depth corresponds to the thickness of the wafer to be produced. The laser beam is applied to the end surface to form a modified layer parallel to the end surface and cracks extending from the modified layer, thus forming the separation plane. The ingot has first atoms having a larger atomic weight and second atoms having a smaller atomic weight, and the end surface of the ingot is set as a polar plane where the second atoms are arranged in forming the separation plane. After producing the wafer from the ingot, the first end surface is ground to be flattened.

Abstract: A method and apparatus for purifying and recycling synthetic turf are provided. The method includes removing a section of used synthetic turf, feeding the section to a rotating beater to knock sand infill loose, and passing the section through a rotating brush roll wherein a turf filament surface is directly contacted by the rotating brush roll to knock any entrained infill material loose from the section of used synthetic turf.

Abstract: The invention relates to a carbon-containing nanomaterial comprising, in particular made up as, a network of carbon wall structures which enclose open or closed voids which has a density which can be as low as 0.2 mg per cm3 or lower. The nanomaterial of the invention is made up as a network of carbon wall structures. The carbon wall structures can be tubular, rod-like or in the form of webs or the like which have varying thickness and thus form a network structure, in particular a three-dimensional network structure constructed in the manner of a sponge.