Abstract: A device, comprising a chamber, a container and two coolers that are arranged on the boundaries of a melted zone of a metal or semiconductor being processed. Each cooler is sectionalized, with its heat-removing elements, adjoining the container, being insulated electrically with respect to the chamber and to each other and with each section being an electrically broken element. Arranged intermediate of the coolers is a high-frequency induction heater. Said container and the high-frequency heater are mounted movably relative to each other in a longitudinal direction.

Abstract: A method for producing a lithium tantalate single crystal comprises the steps of preparing a melt consisting essentially of lithium tantalate in a platinum-rhodium crucible including 20 to 40 weight percent of rhodium, and growing a lithium tantalate single crystal from the melt in an oxidizing atmosphere, for example, in the atmosphere.

Abstract: A method of preparing doped single crystals of cadmium telluride in a single ampoule accommodating a graphite container provided with an opening.Cadmium and a dopant are directly placed in the ampoule, and tellurium is placed in the graphite container. The ampoule is heated at a temperature at which cadmium vapors are formed to penetrate through the opening, together with vapors of the dopant, into the graphite container wherein they react with tellurium vapors and melt to form cadmium telluride. As the temperature grows higher, cadmium telluride is converted into melt which is then subjected to directive crystallization. The resulting crystal is cooled at a rate not exceeding 15.degree. per hour.The crystals thus obtained have the following properties:Lifetime of electron-hole combination .tau. -- up to 3.times.10.sup.-6 s;Electric resistivity .rho. -- up to 10.sup.10 Ohm. cmConcentration of charge carriers less than 10.sup.8 cm.sup.-3.

Abstract: This disclosure relates to a technique of improving the quality of crystals grown by the Czochralski method by substantially eliminating the formation of electrically active oxygen complexes during growth. The oxygen which forms these complexes is liberated from the quartz liner which contains the silicon melt. It has been found that electrically active oxygen complexes (oxygen donors) are formed in the silicon lattice during crystal growth when the crystal is in the range of 300-500.degree. C. Above and below this temperature range, the formation of oxygen donors in the silicon lattice is minimal. The crystal is therefore maintained in its entirety above the temperature of 500.degree. C. and then is quenched to be quickly brought below the 300.degree. C. level. In this way, the silicon crystal is in the 300.degree. C. to 500.degree. C. range for a minimal period of time, thereby minimizing the amount of oxygen donor formation in the silicon lattice during growth.

Abstract: A process for the crucible-free zone pulling of a polycrystalline rod held ertically, together with a seed crystal fixed at its lower end, in which a melting zone is produced by means of an induction heating coil surrounding the rod, which zone, by means of relative movement of the coil and rod, traverses the entire length of the rod starting from the seed crystal, characterized in that after attaching the seed crystal to the rod, a support member is moved, below the induction heating coil, towards the rod, which support member rests gently against the rod and after being positioned, solidifies to form a firm support for the rod. A device for carrying out the process is also included.

Abstract: A process for low-temperature separation of air, wherein liquefied nitrogen and liquefied air enriched with oxygen obtained from preliminary rectification are subjected to secondary rectification to produce gaseous nitrogen containing less than 0.3 vol.% of oxygen and argon impurities, gaseous oxygen-argon mixture and liquefied oxygen-argon mixture containing up to 4.5 vol.% of argon. Subsequently, the gaseous oxygen-argon mixture is subjected to further rectification to produce argon-oxygen mixture containing argon with impurities of 3-0.1 vol.% of oxygen and less than 0.1 vol.% of nitrogen, as well as oxygen with a concentration of from 99.7 to 99.99 vol.%.

Abstract: A method of producing a single crystal of lithium tantalate in a platinum-rhodium crucible containing 20 to 40% by weight of rhodium in an atmosphere of reducing or inert gas.

Abstract: Apparatus for contacting fused solid materials with solid, liquid or gaseous materials, comprising a rotary drum, longitudinal baffles along the inner drum wall inside the apparatus, coaxial consoles being joined in a liquid- and gas-tight manner to faceplates of the drum, for lodging feeding and removing mechanisms. It is a major feature of the invention that a diverter baffle system is mounted from the consoles throughout the interior length of the drum. Two preferred embodiments are described: one for formulating plant protecting agents, wherein the baffle system includes a row of diverting baffles that can be pivoted inside the drum. The other preferred embodiment is suitable for extracting vegetable materials, and here the baffle system is constituted by a stationary drum having a slanting lapping formed therein, similarly pivotable diverting baffles being arranged along the lapping. Various additional and some optional structural features are disclosed for both apparatus embodiments.

Abstract: A process for producing phosphorous-doped silicon monocrystals having a select peripheral depletion or enrichment of dopant atoms along the radial direction of such monocrystals comprises providing a silicon monocrystalline rod homogeneously doped with phosphorous, as by neutron doping, and subjecting such homogeneously doped monocrystalline rod to a peripheral zone melt cycle in a select atmosphere such that the peripheral melt zone depth within the monocrystalline rod is controlled so as to be less than the radius of the rod in accordance with the desired peripheral dopant concentration in the ultimately attained rod.

Abstract: A method of compacting silica dust without the use of water is disclosed. The dust is charged to a hopper and is then injected with air under pressure whereby the weight per unit volume of the material is increased.

Abstract: A method of increasing the bulk density of silica dust is disclosed. The silica dust is treated in a drum preferably having internal ribs whereby its bulk density is substantially increased.

Abstract: There is disclosed an improved rotary extractor assembly comprised of a rotor positioned within a vapor tight vessel and having upper and lower wheel assemblies positioned along the periphery thereof, which wheel assemblies ride on upper and lower track assemblies mounted to the inner surface of the vessel.

Abstract: The orientation of twinning and other effects in silicon crystal ribbon growth is controlled by use of a starting seed crystal having a specific {110} crystallographic plane and <112> crystallographic growth direction.

Abstract: A stylus for the capacitive pickup of information signals inscribed in a recording medium as a geometrical variation comprises a corundum single crystal rod having two parallel side faces, which are inherently flat and optically smooth, and a thin electrode film coated on one of these two side faces. The electrode film is normal to the c-axis of the crystal, and the longitudinal axis of the rod coincides with one of the a-axes. The rod is formed by the "edge defined film fed growth" method, wherein corundum melt is made to spread as a film over a flat shape-defining surface and a seed crystal is pulled vertically through a capillary so that an elongated crystal is continuously grown. The c-axes of the grown and seed crystals are parallel to the shape-defining surface and normal to the growth direction. Thereby, the rod is formed without the need of machining and abrading steps, other than steps for the shaping of a tip.

Abstract: A novel cartridge containing selected crystal growth components is provided for use in a crystal growing system. The cartridge is adapted to be mounted directly to a crystal pulling mechanism and is arranged so that it can be inserted into a furnace containing a supply of molten feed material. The cartridge includes a crystal growing die, a die holder, and associated crystal growth components arranged to permit rapid growth of selected shape. The cartridge is assembled outside of the furnace at room temperature and can be inserted into and removed from the furnace without having to cool the latter.

Abstract: A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with a second pipe for the silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than the distance from an opening end of the second pipe to the substrate.

Abstract: An improved salt dissolver for producing a uniform supply of a concentrated salt solution incorporating a novel filter and collector manifold assembly adjacent to the base of a tank adapted to be filled with bulk quantities of a soluble salt compound. The filter and collector manifold arrangement provides for high solution flow rate and facilitates replacement of the tubular filter element as may be required or desired from time to time.

Abstract: In Czochralski crystal growing operations, particularly those involving growth of silicon crystals, projecting formations of silicon monoxide, which sometimes form on the surface of the melt-containing crucible just above the surface of the melt, are avoided by perturbing the formation conditions at the region of probable formation. Such perturbations may include increasing the temperature of the crucible at the region of probable formation. The increase in temperature may be provided by including an aperture in the housing which surrounds and supports the crucible to enable locally greater radiative heating of the crucible in the region of probable formation. Other expedients for locally increasing the temperature of the crucible include, without limitation, selective frosting and other techniques for locally changing the emissivity characteristics of the crucible and/or the surrounding material.

Abstract: Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture of the seed crystal and the polycrystalline rod, controllably moving the melt zone away from the juncture and through the polycrystalline rod to a select point thereon, uniformly supporting the cone-shaped lower portion of the rod being processed so as to prevent oscillations and the like at the juncture of the rod in the seed crystal and controllably moving the melt zone from the select point to the remainder of the rod. A uniform support is preferably provided by an axially movable funnel-shaped casing which is attached to the seed crystal holding member and which, when moved into its operating position, is filled with a self-adjusting oscillation or vibration dampening means, such as molten metal, metal spheroids, quartz particles, sand, etc.

Abstract: Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture of the seed crystal and the polycrystalline rod, controllably moving the melt zone away from the juncture and through the polycrystalline rod to a select point thereon, uniformly supporting the cone-shaped lower portion of the rod being processed so as to prevent oscillations and the like at the juncture of the rod in the seed crystal and controllably moving the melt zone from the select point to the remainder of the rod. A uniform support is preferably provided by an axially movable funnel-shaped casing which is attached to the seed crystal holding member and which, when moved into its operating position, is filled with a self-adjusting oscillation or vibration dampening means, such as molten metal, metal spheriods, quartz particles, sand, etc.