Abstract: A discharge lamp driver includes a discharge lamp drive unit that supplies a drive current to the discharge lamp, and a control unit that controls the discharge lamp drive unit according to a drive current waveform, wherein the drive current waveform has a mixed frequency drive period including a unit drive period containing a first drive period in which a first drive current is supplied to the discharge lamp and a second drive period provided immediately after the first drive period, in which a second drive current is supplied to the discharge lamp, the first drive current is a half-period alternating current having a frequency higher than 10 Hz and not higher than 300 Hz, the second drive current is an alternating current having a frequency higher than 1000 Hz, and a length of the second drive period is equal to or longer than a length of the first drive period.

Abstract: A projector includes an image formation apparatus that forms an image, a lens barrel that accommodates a projection lens that projects the formed image, and a light blocking portion that is configured as a member separate from the lens barrel, is located in a position between the image formation apparatus and the lens barrel, and blocks light to be incident on the lens barrel. The configuration of the projector allows blockage of light incident on the lens barrel and hence prevention of distortion of the lens barrel.

Abstract: An optical apparatus includes a touch substrate; a waveguide layer arranged on the touch substrate, the waveguide layer including a plurality of waveguides; an optical output structure arranged on the waveguide layer and configured to output light propagating in the plurality of waveguides at touched locations on the touch substrate; a gap layer arranged to provide a predetermined gap between the waveguide layer and the optical output structure; and an optical system, which projects light output by the optical output structure.

Abstract: A multi-DMD projection system uses an extended X-cube color splitting/recombining prism to implement splitting and recombining functions at different sections of the cube. Light directed from a white light source is split into red, green and blue components in a lower section of the cube. The components are directed to respective first, second and third DMDs for separate modulations and reentered into the X-cube prism by TIR prism for recombining at an upper section of the cube.

Abstract: The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.

Abstract: A lithography tool is calibrated using a calibration substrate having a set of first marks distributed across its surface in a known pattern. The tool is operated to apply a pattern comprising a plurality of second marks at various positions on the substrate, each second mark overlying one of the first marks and being subject to an overlay error dependent on an apparatus-specific deviation. The second marks are applied by multiple exposures while the substrate remains loaded in the tool. An operating parameter of the apparatus is varied between the exposures. An overlay error is measured and used to calculate parameter-specific, apparatus-specific calibration data based on knowledge of the parameter variation used for each exposure.

Abstract: A lithographic apparatus includes a driven object having compliant dynamics; a plurality of actuators configured to act on the driven object, wherein the plurality of actuators are over-determined in an actuator degree of freedom; a control system including a transformation matrix configured to generate controller output signals for each of the plurality of actuators in response to a setpoint, wherein the transformation matrix is configured such that the controller output signals do not excite the compliant dynamics of the driven object in at least one degree of freedom.

Abstract: A lithographic apparatus includes a projection system configured to project a patterned radiation beam onto a target portion of a substrate. The projection system has a final element. The apparatus also includes a barrier member surrounding a space between the projection system and, in use, the substrate, to define in part with the final element a reservoir for liquid. The barrier member is spaced from the final element to define a gap therebetween. The apparatus further includes a deformable seal between a radially outer surface of the final element and a radially outer surface of the barrier member. The deformable seal is configured to substantially prevent a gas from flowing past the seal towards or away from the reservoir of liquid.

Abstract: A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body. In this case, at least one mirror of the plurality of mirrors has at least one layer comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror.

Abstract: An extreme ultraviolet (EUV) light source is provided. The EUV light source comprises a spray nozzle array having a plurality of spray nozzles configured to spray a plurality of rows of droplets to an irradiating position; a laser source configured to generate a first laser beam and a second laser beam and cause the first laser beam and the second laser beam to alternately bombard the rows of droplets to generate EUV light with increased output power; a focusing mirror having at least two first sub-focusing mirrors and at least two second sub-focusing mirrors; and a first driving device having at least two first sub-driving device and at least two second sub-driving device, each of first driving devices driving one of the first sub-focusing mirrors and each of the second sub-driving devices driving one of the second sub-focusing mirrors.

Abstract: A light source device includes a phosphor layer having a side surface, a bottom surface, and a top surface opposed to the bottom surface, a reflecting member opposed to the side surface of the phosphor layer, a substrate disposed on the bottom surface side of the phosphor layer, and an adhesive adapted to bond the phosphor layer and the substrate to each other. A surface of the substrate located on the phosphor layer side includes a recessed section overlapping the reflecting member on at least an outer side of the phosphor layer in a planar view. A part of the adhesive running off the phosphor layer is received by the recessed section. Fluorescence generated in the phosphor layer is emitted from the top surface and the side surface.

Abstract: MQW devices, IC chips and methods may be used in semiconductor lithography patterning systems. An MQW device includes an array of pixels that have transmission elements and associated support circuits. The support circuits have preliminary memory cells and final memory cells. The final memory cells store transmittance values that control transmittances of the associated transmission elements. This way, exposure of a target with a lithography system for purposes of patterning the target may be performed through the transmission elements according to the controlled transmittances, while subsequent transmittance values are being received by the preliminary memory cells from memory banks. The exposure of the target therefore needs to pause for less time, in order to wait for the MQW device to be refreshed with the subsequent transmittance values. Accordingly the whole semiconductor lithography patterning system may operate faster and thus have more throughput.

Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.

Abstract: A method for sub-diffraction-limited patterning using a photoswitchable layer is disclosed. A sample of the photoswitchable layer can be selectively exposed to a first wavelength of illumination that includes a super-oscillatory peak. The sample can be selectively exposed to a second wavelength of illumination that does not include the super-oscillatory peak. A region in the sample that corresponds to the super-oscillatory peak and is associated with the second transition state can optionally be converted into a third transition state. The region in the sample at the third transition state can constitute a pattern of an isolated feature with a size that is substantially smaller than a far-field diffraction limit.

Abstract: Lithography apparatus and device manufacturing methods are disclosed in which means are provided for reducing the extent to which vibrations propagate between a first element of a projection system and a second element of a projection system. Approaches disclosed include the use of plural resilient members in series as part of a vibration isolation system, plural isolation frames for separately supporting first and second projection system frames, and modified connection positions for the interaction between the first and second projection system frames and the isolation frame(s).

Abstract: Method for setting an illumination setting in an illumination optical unit comprising at least one controllable correction device, which includes a multiplicity of adjustable correction elements for influencing the transmission, wherein the illumination setting is varied for adapting a predetermined imaging parameter in the region of an image field.

Abstract: A linear stacked stage suitable for REBL may include a first upper fast stage configured to translate a first plurality of wafers in a first direction along a first axis, the first upper fast stage configured to secure a first plurality of wafers; a second upper fast stage configured to translate a second plurality of wafers in a second direction along the first axis, the second upper fast stage configured to secure the second plurality of wafers, the second direction opposite to the first direction, wherein the translation of the first upper fast stage and the translation of the second upper fast stage are configured to substantially eliminate inertial reaction forces generated by motion of the first upper fast stage and the second upper fast stage; and a carrier stage configured to translate the first and second upper fast stages along a second axis.

Abstract: Systems and method directed to digital pattern generator (DPG) having a mirror array in an e-beam lithography system are discussed. The mirror array includes a first bank of mirrors and a second bank of mirrors with a combination logic structure interposing the first and second banks of mirrors. An output data line extends from the first bank of mirrors to the combinational logic structure. An input data line that carries data associated with the second bank of mirrors is also provided to the combinational logic structure. An output data line extends from the combinational logic structure to second data bank.

Abstract: A projector includes a projecting unit including a projection optical system and configured to project an image on a screen SC, a lens driving unit configured to perform focus adjustment for the projection optical system, a trapezoidal-distortion correcting unit configured to perform distortion correction processing for correcting distortion of the image projected by the projecting unit, and a projection control unit configured to cause the trapezoidal-distortion correcting unit to execute the distortion correction processing until a completion condition for the distortion correction processing holds after a start condition for the distortion correction processing holds and restrict the execution of the focus adjustment by the lens driving unit while the projection control unit causes the trapezoidal-distortion correcting unit to execute the distortion correction processing.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography process. The process includes loading a wafer to an EUV lithography system having an EUV source; determining a dose margin according to an exposure dosage and a plasma condition of the EUV source; and performing a lithography exposing process to the wafer by EUV light from the EUV source, using the exposure dosage and the dose margin.