Patents Examined by Steven Leko
  • Isolation structure for trench capacitors and fabrication method thereof
    Patent number: 7041567
    Abstract: This invention relates to a method for self-aligned fabricating an isolation structure of a trench capacitor. The method takes two steps to etch the substrate for forming the shallow trench of the isolation structure, wherein the conductive layer and the collar oxide layer of the trench capacitor remain intact during the etching processes.
    Type: Grant
    Filed: November 18, 2004
    Date of Patent: May 9, 2006
    Assignee: Nanya Technology Corp.
    Inventors: Yinan Chen, Ping Hsu, Li-Han Lu