Patents Examined by Steven Luke
  • Ferroelectric capacitor and a method for manufacturing thereof
    Patent number: 6495872
    Abstract: It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelecticity. A silicon oxide layer 2, a lower electrode 12, a ferroelectric layer 8 and an upper electrode 10 are formed on a silicon substrate 2. The lower electrode 12 is formed by an alloy layer made of iridium and platinum. The alloy layer of the lower electrode 12 can be formed under appropriate lattice constant correspond with a kind and composition of the ferroelectric layer 8.
    Type: Grant
    Filed: January 22, 2001
    Date of Patent: December 17, 2002
    Assignee: Rohm Co., Ltd.
    Inventor: Takashi Nakamura