Abstract: An apparatus and method of machining sliders to obtain the optimum PTR for each slider. An array of MEMS devices configured for angular actuation are provided, and a slider is placed in each MEMS device of the array. The ion milling of the sliders is controlled individually for each slider based on the relationship of the ion angle and relative etch rates of the slider components. The MEMS devices are controlled to ensure the ion incidence angle for each slider is such that the desired PTR of each slider is achieved.

Abstract: Apparatus and methods for measuring characteristics of a metallic target as well as other interior surfaces of a sputtering chamber. The apparatus includes a sensor configured to emit an energy beam toward a surface of interest and to detect an energy beam therefrom, the detected energy beam being indicative of parameters of a characteristic of interest of the surface of interest. Quantitative and qualitative characteristics of interest may be determined. A sputtering system including the apparatus and operable according to the methods of the invention is also disclosed.

Abstract: Apparatus for producing ozone gas for use in the beauty treatment of skin, comprising a sealed vessel (1) containing a gas and means for supplying to the vessel a potential difference (9), thereby causing the gas to become charged, whereby placing the vessel close to the skin of a user causes the charged gas to discharge by creating an electrical spark which jumps between the vessel and the skin, the spark resulting in the production of ozone gas in the vicinity of the skin, wherein the apparatus additionally comprises a guard (1a) for the vessel to protect the vessel from breakage, the guard having apertures therein to permit the vessel to discharge to the skin of the user.

Abstract: There is disclosed a dual magnetron sputtering apparatus that is comprised of a balancing circuit connected to the output of an ac power source that supplies ac power to at least two target materials such that the balancing circuit allows the power supply to deliver equal power to each target material. In those applications where there may be an erosion of one target material faster than the other, the balancing circuit allows the power supply to deliberately unbalance the power to at least one of the target materials to reduce power to the target to compensate for faster erosion of the target.

Abstract: A device for producing electrical discharges in an aqueous medium which comprises a first electrode and a second electrode comprised of a superalloy having a cobalt content of greater than 8% by weight or optionally a nickel content of greater than 8% by weight. A high electrical voltage is applied to the electrodes to produce a voltage discharge into the medium that creates a pressure wave in the medium. The electrodes of the device exhibit high thermal shock resistance during discharge thereby reducing tip burnout.

Abstract: A method for sputtering a thin film protective layer with improved durability is disclosed. The method reduces kinetic energy of the ions of the overcoat material during the initial period of deposition to form a buffering interface which reduces the interpenetration of the atoms of the protective layer into the underlying film. In the method of the invention the sputtering of the overcoat preferably begins with zero (or very low) voltage applied to the underlying film resulting in minimal ion implantation in the underlying film. The “high energy” phase of the process begins with increases in the magnitude of the negative bias voltage applied to the underlying film. The higher energy imparted to ions in the plasma result in a denser and harder film being formed over the initial buffer layer. The protective layer preferably comprises carbon and nitrogen.

Abstract: A glass article which has a water-sheeting coating and a method of applying coatings to opposed sides of a substrate are described. In one embodiment, a glass sheet is provided bearing a sputtered water-sheeting coating comprising silica on an exterior surface and bearing a reflective coating on an interior surface. The interior surface of a sheet of glass can be coated with a reflective coating by sputtering, in sequence, at least one dielectric layer, at least one metal layer, and at least one dielectric layer. The exterior surface of the glass can be coated with a water-sheeting coating by sputtering silica directly onto the exterior surface of the sheet of glass. Both the reflective coating and the water-sheeting coating can be applied during the same pass through the same sputter coating apparatus.

Abstract: A facing targets sputtering device for semiconductor fabrication includes an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween; a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates; a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; and a back-bias power supply coupled to the substrate holder.

Abstract: A method for forming a trimmed upper pole piece for a magnetic write head, said pole piece having a tapered profile that is widest at its trailing edge. Such a pole piece is capable of writing narrow tracks with sharply and well defined patterns and minimal overwriting of adjacent tracks. The present method produces the necessary taper by using NiCr, NiFeCr, Rh or Ru as write gap filling materials which have an etch rate which is substantially equal to the etch rate of the other layers forming the pole piece and are highly corrosion resistant. As a result, the write gap does not protrude to mask the effects of the ion-beam etch used to form the taper.

Abstract: Anode with a 2450 MHz resonance frequency, and magnetron therewith, the anode including a cylindrical anode body with an inside diameter in a range of 32.5 to 34.0 mm, a total of ten vanes fitted to an inside circumferential surface of the anode body in a radial direction, and an inner strap and an outer strap provided to both of an upper surface and a lower surface of each vane, a distance of the inner strap and the outer strap being in a range of 0.8 to 1.2 mm, and each of the inner strap and outer strap being in contact with every second vanes for electrical connection of the vanes alternately. The anode body and the vanes are formed as one unit for simplification of a fabrication process.

Abstract: Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.

Abstract: The present invention is a high volume, wall-mountable air sanitation apparatus for disinfecting and removing VOCs from air with high energy UV light and ozone. The apparatus has a powerful fan and an elongated UV light source and target for use with the movement of a large volume of air. The target includes a mesh and a secondary target both comprising a target compound which creates hydro-peroxides, super oxide ions and hydroxyl radicals in the presence of water also for removing pollutants in the air.

Abstract: The invention includes PVD targets having non-sputtered regions (such as, for example, sidewalls), and particle-trapping features formed along the non-sputtered regions. In particular aspects, the particle-trapping features can comprise a pattern of bent projections forming receptacles, and can comprise microstructures on the bent projections. The targets can be part of target/backing plate constructions, or can be monolithic. The invention also includes methods of forming particle-trapping features along sidewalls of a sputtering target or along sidewalls of a target/backing plate construction. The features can be formed by initially forming a pattern of projections along a sidewall. The projections can be bent and subsequently exposed to particles to form microstructures on the bent projections.

Abstract: An air conditioner includes an ion generator that provides ions and safe amounts of ozone. The ion generator includes a high voltage generator that provides a voltage potential difference between first and second electrode arrays. At least one of the first and second arrays is removable from the housing for cleaning.

Abstract: A milling apparatus is provided in which temperature rise of a treatment-object in milling treatment, especially of the substrate thereof, is prevented. In the apparatus, ionization mechanism 2 comprises casing 20d having an opening at the center portion of the face thereof opposing to substrate 5 held by substrate holder 6; a filament is placed at the position where the straight line drawn from the filament to substrate 5 is intercepted by casing 20d; and electromagnets 31, 32 are provided around ionization mechanism 2 for generating a magnetic field to produce magnetic lines extending through opening 20j to substrate 5.

Abstract: A continuous coating system has several treatment chambers (1, 2) that are arranged one after the other in such a way that in each case, a wall (3) of one treatment chamber (1) having a passage (5) contacts a wall (4) in the adjacent treatment chamber (2) that also has a passage (6). One of the passages (5) is provided in a sealing insert (7), which supports itself on the same side with a first support surface (9) on the wall (3) of one treatment chamber (1) and with a second support surface (10) against the wall (4) of the adjacent treatment chamber (2). Between the two support surfaces (9, 10) and the respective walls (3, 4), in each case there is a surrounding gasket (13, 14) against the respective support surface (9, 10) and the wall (3, 4).

Abstract: A method and apparatus for processing a thin film on a substrate. The method involves locating the substrate in a first rotational position a location opposed to a process station. The process station has a first axis and is arranged for processing the substrate about that axis. The substrate location is symmetrical about a second axis parallel to but offset from the first axis. The substrate is rotated about an axis generally orthogonal and passing through the wafer location to a second rotational position after an initial process and further processing takes place when the substrate is in the second rotational position.

Abstract: An air purifier device with an electrode assembly insertion lock comprises a housing, a removable electrode assembly, and a gravity-operated lock which prevents the removable electrode assembly from being inserted into the housing while the housing is in a vertical orientation, thereby preventing the electrode assembly from free-falling within the housing during insertion into the opening.

Abstract: A method and structure for a sample processing apparatus that uses a vacuum enclosure is disclosed. A focused ion beam tool, sputter target, movable stage, and hinged mount are all included within the vacuum enclosure. The hinged mount includes a sample mounting portion, for holding a sample being processed in the vacuum enclosure, and a counterweight portion. The counterweight portion is connected to the sample mounting portion at an approximate right angle to the sample mounting portion. More specifically, one end of the sample mounting portion is connected to one end of the counterweight portion, such that the sample mounting portion and the counterweight portion form an approximate right angle. There is also an axis around which the mount rotates. The axis passes through the sample mounting portion and the counterweight portion at a location where the sample mounting portion and the counterweight portion connect to one another.

Abstract: An aluminum alloy sputter target having a sputter target face for sputtering the sputter target is disclosed. The sputter target face has a textured-metastable grain structure. The textured-metastable grain structure has a grain orientation ratio of at least 35 percent (200) orientation. The textured-metastable grain structure is stable during sputtering of the sputter target. The textured-metastable grain structure has a grain size of less than 5 ?m. The method forms aluminum alloy sputter targets by first cooling an aluminum alloy target blank to a temperature of less than ?50° C. Then deforming the cooled aluminum alloy target blank introduces plastic strain into the target blank and reduces the grain size of the grains to form a textured-metastable grain structure. Finally, finishing the aluminum alloy target blank forms a finished sputter target that maintains the textured-metastable grain structure of the finished sputter target.