Patents Examined by Steven Versteeg
  • Patent number: 6787003
    Abstract: A sputtering target may include: a) a backing adapted to be operatively connected to a sputter power source; and b) an outer layer of a sputterable material carried by the backing, the sputterable material including a mixture of zinc and a second metal having a melting point less than that of the zinc, the zinc and the second metal being present in the sputterable material in metallic form and arranged as discrete volumes of the second metal in a matrix of zinc so that the zinc and the second metal are present in the sputterable material in a substantially non-alloyed form.
    Type: Grant
    Filed: May 31, 2002
    Date of Patent: September 7, 2004
    Assignee: N.V. Bekaert S.A.
    Inventors: Klaus Hartig, Johan Vanderstraeten
  • Patent number: 6787005
    Abstract: A sputter coated article is provided with improved mechanical durability (e.g., pre-HT scratch resistance) and/or thermal stability by sputtering at least one Ag inclusive layer in an atmosphere including at least O2 gas. For instance, in certain example embodiments an Ag inclusive target may be sputtered in an atmosphere including a combination of Ar and O2 gas. In certain embodiments, this enables the resulting AgOx infrared (IR) reflecting layer to better adhere to adjacent contact layer(s).
    Type: Grant
    Filed: September 16, 2002
    Date of Patent: September 7, 2004
    Assignees: Guardian Industries Corp., Centre Luxembourgeois de Recherches pour le Verre et la Ceramique S.A. (C.R.V.C.)
    Inventors: Ronald E. Laird, George Neuman, Philip J. Lingle, Jean-Marc Lemmer, Keith H. Schillinger
  • Patent number: 6783634
    Abstract: There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.
    Type: Grant
    Filed: September 12, 2001
    Date of Patent: August 31, 2004
    Assignee: Hoya Corporation
    Inventors: Osamu Nozawa, Hideaki Mitsui
  • Patent number: 6783644
    Abstract: A film deposition method, which can form a high quality functional thin film excellent in various physical properties on a surface such as a plastic substrate, is provided. A carbon precursor film is formed on the surface of the substrate K with carbon ions (N2A) using a processing source (4) (a FCVA ion source) with no voltage applied to the substrate K, and then carbon ions (N2B) are implanted in the carbon precursor film with a pulsed voltage containing a negative pulse voltage of −15 kV or less applied to the substrate K, in order to form the carbon thin film. The quality of the carbon precursor film is improved and the various physical properties of the carbon thin film can be controlled.
    Type: Grant
    Filed: December 17, 2002
    Date of Patent: August 31, 2004
    Assignee: Sony Corporation
    Inventors: Minehiro Tonosaki, Koji Kitagawa
  • Patent number: 6783642
    Abstract: In order to make labyrinth seal lips on the periphery of a metal moving part of a turbomachine, a thick layer of refractory material that adheres to the metal is made prior to assembling the moving part, the refractory material advantageously comprising at least one metal selected for example from Fe, Co, and Ni, together with at least one ceramic selected for example from borides, nitrides, carbides, and refractory oxides. The labyrinth seal lips that are to be made are machined to their final dimensions in the deposited thick layer.
    Type: Grant
    Filed: September 10, 2002
    Date of Patent: August 31, 2004
    Assignee: SNECMA Moteurs
    Inventors: GĂ©rard Gueldry, Claude Mons
  • Patent number: 6783641
    Abstract: A vacuum treatment system has a vacuum treatment chamber, has an ACTUAL value sensor to establish a treatment atmosphere in the form of a regulating element of a control circuit. The treatment atmosphere in the treatment area is modulated according to a defined profile as a function of the workpiece carrier position. The system and process deposits defined layer thickness distribution profiles on substrates in a reactive coating.
    Type: Grant
    Filed: March 7, 2003
    Date of Patent: August 31, 2004
    Assignee: Unaxis Balzers Aktinegesellschaft
    Inventor: Othmar Zueger
  • Patent number: 6783640
    Abstract: In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: August 31, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshihiro Yamashita, Hiroshi Echizen, Yasuyoshi Takai, Hidetoshi Tsuzuki
  • Patent number: 6783643
    Abstract: A solid state structure having a surface is provided and exposed to a flux, F, of incident ions under conditions that are selected based on: ∂ ∂ t ⁢ C ⁡ ( r , t ) = F ⁢   ⁢ Y 1 + D ⁢ ∇ 2 ⁢ C - C τ trap - F ⁢   ⁢ C ⁢   ⁢ &sigm
    Type: Grant
    Filed: June 27, 2002
    Date of Patent: August 31, 2004
    Assignee: President and Fellows of Harvard College
    Inventors: Jene A. Golovchenko, Daniel Branton, Michael J. Aziz, Jiali Li, Derek M. Stein, Ciaran J. McMullan
  • Patent number: 6780294
    Abstract: Disclosed is a shielding assembly for use within a substrate deposition processing chamber. The shielding assembly permits sputtering and evaporation processes to take place without the target material depositing upon the internal non-disposable surfaces of the chamber. The shielding assembly is of an improved construction which permits it to be uncoupled from an adapter plate without the need for removing the adapter plate from the deposition chamber.
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: August 24, 2004
    Assignee: Set, Tosoh
    Inventors: Robert B. Hixson, Gary William Groshong, David Bruce Jordan, Jose Luis Gonzalez
  • Patent number: 6780290
    Abstract: The prevent invention improves the film thickness distribution in the direction of revolution of substrates by a simple manner in a method for forming coating films, wherein a evaporating source 3 is disposed at a predetermined distance from substrates 2, and when a coating film material is applied from the evaporating source 3 onto the substrate surfaces while revolving the substrates 2, coating films are formed on the substrate surfaces in a condition where the radius of curvature of the substrates 2 obtained by bending the substrates 2 within the elasticity range is made equal to the radius of revolution of the substrates 2.
    Type: Grant
    Filed: February 3, 2003
    Date of Patent: August 24, 2004
    Assignee: Nippon Sheet Glass Co., Ltd.
    Inventors: Masahiro Ikadai, Etsuo Ogino
  • Patent number: 6776887
    Abstract: A carrier (20) is used in the thin film coating of disks (35). The disks (35) are held in a disk tray (30). The disks (35) have a center (35a) through which the thin film coating can go through. The carrier (20) includes a base plate (21) for receiving the disk tray (30). A plurality of discrete shields (24) are positioned in alignment with the center openings of the disk (35). The shields (24) are releasably connected to the base plate (21). Preferably, the shields (24) are releasably connected by a magnetic force.
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: August 17, 2004
    Assignee: Imation Corp.
    Inventors: Gregory D. Roberts, Richard F. Willson
  • Patent number: 6776971
    Abstract: A method and apparatus for initiating a rapid and long-lasting pH change to a pH dependent polymer or other pH driven reactant is provided by a pH jump molecule in solution. Visible light is used to excite the pH jump molecule. The attendant pH change occurs rapidly (in nanoseconds) and can be maintained by continuous wave light or by an appropriately pulsed light. Heat resulting from the light activation is efficiently discharged by radiative decay through room temperature phosphorescence lifetimes existing on the order of milliseconds.
    Type: Grant
    Filed: January 29, 2002
    Date of Patent: August 17, 2004
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Carol A. Becker
  • Patent number: 6776879
    Abstract: It is an object of the invention to provide a backing plate used for the sputtering apparatus and a sputtering method which can improve film deposition rate and film quality without increasing the size of the target with respect to the substrate. High sputtering power is applied to a target portion opposite to a location where a thin film is formed on a surface of a substrate, thereby a thin film having even film thickness and film quality can be formed without increasing the size of the target. Further, a cooling medium flow passage can eliminate temperature unevenness caused by different sputtering powers to be applied to a target surface. The problem caused by the temperature rise can be solved and the film deposition speed can be enhanced by increasing the sputtering power which can be applied to the target. Consequently, it is possible to improve productivity of the substrate.
    Type: Grant
    Filed: January 28, 2002
    Date of Patent: August 17, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tatsushi Yamamoto, Takamitsu Tadera
  • Patent number: 6776882
    Abstract: Method for producing hybrid disks has a first substrate that is transparent in a given spectral band. A layer system that is semi-transparent in the given band succeeds the first substrate and is followed by a further substrate that is transparent in the given band. Next, is a reflection layer system which is in the semi-transparent layer system and is deposited by a vacuum coating method of identical type. The first substrate is covered by a moisture protection layer system that is transparent in the given spectral band and has at least one layer deposited by a vacuum coating method of identical type.
    Type: Grant
    Filed: November 9, 2001
    Date of Patent: August 17, 2004
    Assignee: Unaxis Balzers Aktiengesellschaft
    Inventor: Martin Dubs
  • Patent number: 6773557
    Abstract: System for frequency adjustment of piezoelectric resonators by ion etching in vacuum, based on arranging the resonators in rows and columns on a tray that can be moved to simultaneously expose two rows of resonators to the two straight-track portions of an ion gun having a race-track-shaped beam pattern whose straight tracks are spaced at an integer multiple of the inter-row spacing d. As the tray is moved in steps of d, two rows can be etched simultaneously, and each row can be sequentially exposed to a “pre-etch” and “final-etch” stage, with time between the two stages for the resonators to cool down after the “pre-etch” stage.
    Type: Grant
    Filed: January 31, 2001
    Date of Patent: August 10, 2004
    Assignee: Showa Shinku Co., Ltd.
    Inventor: John R. Leitz
  • Patent number: 6773558
    Abstract: A fluorine generator includes a vacuum chamber filled with a working gas. An r-f antenna is positioned outside the chamber across a dielectric window from a potassium fluoride (KF) source located in the chamber. The r-f antenna radiates through the window to heat the working gas and sublime the PK source to create a plasma. Crossed electric and magnetic fields in the chamber drive the heavier potassium ions in the plasma toward a collector in the chamber while confining the lighter fluorine and working gas ions for evacuation from the chamber.
    Type: Grant
    Filed: October 15, 2002
    Date of Patent: August 10, 2004
    Assignee: Archimedes Technology Group, Inc.
    Inventors: Stephen F. Agnew, Sergei Putvinski
  • Patent number: 6773683
    Abstract: A photocatalytic reactor system consisting of a photonic energy source to remove undesirable contaminants from an effluent stream. The device includes a photonic energy source, a beam delivery system, and a reaction chamber into which the photonic energy is transmitted. The contaminated effluent flows through the reaction chamber where the photonic energy reacts with it to reduce contaminant emissions.
    Type: Grant
    Filed: January 8, 2002
    Date of Patent: August 10, 2004
    Assignee: UVTech Systems, Inc.
    Inventors: David J. Elliott, Allan R. Thompson, George D. Whitten, Jonathan C. Camp, Mark T. Krajewski
  • Patent number: 6770176
    Abstract: Methods of manufacturing an electrochemical device, are taught. The methods may be of particular use in the manufacture of thin-film, lightweight, flexible or conformable, electrochemical devices such as batteries, and arrays of such devices. The methods may provide many advantages including stunting fractures in a first electrochemical layer from propagating in a second electrochemical layer.
    Type: Grant
    Filed: August 2, 2002
    Date of Patent: August 3, 2004
    Assignee: ITN Energy Systems. Inc.
    Inventors: Martin H. Benson, Bernd J. Neudecker
  • Patent number: 6770175
    Abstract: An apparatus, for forming an electrode for a lithium secondary cell capable of readily forming an active material layer constituted by at least two elements and controlling the composition of the active material layer, comprises a first sputtering source for sputtering a first material forming the active material layer onto the surface of the collector and a second sputtering source for sputtering a second material forming the active material layer onto the surface of the collector. Plasma regions of the first and second sputtering sources are arranged to overlap each other. The active material layer constituted by at least two elements is readily formed with excellent reproducibility, and its composition can be readily controlled by independently controlling power applied to the first sputtering source and the second sputtering source.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: August 3, 2004
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Yoichi Domoto, Hisaki Tarui, Hiromasa Yagi
  • Patent number: 6767435
    Abstract: A bright surface structure formed on a member made from metal or resin. A first structure includes: (a) a resin film coated on the member, and (b) a thin metal film formed on the resin film. The thin metal film is made from any one of stainless steel, titanium alloy and nickel alloy. A second structure further includes (c) a clear protective film coated on the thin metal film. A third structure includes: (b′) a thin metal film formed on the resin film of (a), and (c′) a clear colored protective film coated on the thin metal film of (b′). The thin metal film of (b′) is made from any one of stainless steel, titanium alloy, nickel alloy, aluminum, titanium and chromium.
    Type: Grant
    Filed: September 15, 2000
    Date of Patent: July 27, 2004
    Assignee: Topy Kogyo Kabushiki Kaisha
    Inventors: Naoaki Kitagawa, Shinichi Okabe