Abstract: A method for writing to a memory is disclosed. The method includes generating a write current that flows to a memory cell of the memory, generating a mirror current that mirrors the write current, and inhibiting application of a write voltage to the memory cell of the memory based on the mirror current. A device that performs the method is also disclosed. A memory that includes the device is also disclosed.
Type:
Grant
Filed:
January 6, 2016
Date of Patent:
July 2, 2019
Assignee:
Taiwan Semiconductor Manufacturing Company Limited