Abstract: An integrated modulator and semiconductor laser device includes a semiconductor substrate; an optical waveguide including an active layer having a width and a cladding layer, and disposed on the semiconductor substrate, the optical waveguide including a laser part and a modulator part modulating the intensity of laser light; a semi-insulating semiconductor layer disposed on opposite sides of the optical waveguide; a low-resistance contact layer for making an ohmic contact with an electrode material, disposed on the optical waveguide, being absent between the laser part and the modulator part, and having a width equivalent to the width of the active layer.

Abstract: The present invention provides a highly compact vertical cavity surface emitting laser structure formed by a lateral oxidation process. Specifically, the present invention allows for the use of well-controlled oxidized regions to bound and to define the aperture of a laser structure in a current controlling oxidation layer, wherein the aperture comprises a conductive region in the oxidation layer. These oxidized regions are formed by the use of a pre-defined bounding pattern of cavities etched in the laser structure, which allow the embedded oxidation layer to be oxidized, and which results in a highly reproducible and manufacturable process.

Abstract: A grating coupled surface emitting laser has a diffraction grating of a second or higher order for guided-mode light part of a waveguide region, and extract a beam in a direction perpendicular to the waveguide region. By narrowing a stripe of the waveguide region around the center, the phase of the diffraction grating is shifted to attain a Gaussian distribution for radiation-mode light in a cross section along the waveguiding direction.

Abstract: A semiconductor laser includes an n-type GaAs current blocking layer formed at both sides of a stripe portion made of an upper-lying portion of a p-type AlGaInP cladding layer, p-type GaInP intermediate layer and p-type GaAs cap layer to form a current blocking structure, and the p-type AlGaInP cladding layer has a thickness d.sub.1 at both sides of the stripe portion and a thickness d.sub.2 outside them (0<d.sub.1 <d.sub.2) to effect optical guide by transversely changing refractive indices. In this case, the semiconductor laser has a refractive index n.sub.1 in the stripe portion, a refractive index n.sub.2 at both sides of the stripe portion, and a refractive index n.sub.3 in further outer sides (n.sub.2 <n.sub.3 <n.sub.1). Width W.sub.G of a gain region inside a GaInP active layer and width W.sub.P of an optical guide region (W.sub.G <W.sub.P) are controlled independently, and a saturable absorbing region with a sufficient area is ensured.

Abstract: A ridge type laser diode with a stabilized horizontal transverse mode and little variation in peak output power and a method for producing the laser. The ridge type laser diode includes a semiconductor substrate; an active layer on the semiconductor substrate, the active layer being interposed between a lower cladding layer and an upper cladding layer; and a ridge waveguide having a width, the ridge waveguide being part of the upper cladding layer so that the active layer located directly opposite the ridge waveguide is a first high refractive index region having a first refractive index; and a second high refractive index region in the central part of the first high refractive index region, having a second, higher refractive index than the first refractive index, and formed by disordering a region other than the central part and having a width less than the width of the ridge waveguide.

Abstract: A semiconductor laser package including a plastic resin housing for encapsulating a vertical cavity surface emitting laser. The semiconductor laser package including a mounting base, a surround can and a cap. The cap having integrally formed therein a power monitoring system, such as a photodetector. The vertical cavity surface emitting laser generating an emission along a path. The photodetector optically positioned to receive a portion of the emission. The power monitoring system including a plurality of layers of an amorphous silicon material and/or a germanium material.

Abstract: In the DFB laser diode structure, having complex optical grating coupling, the grating has a layer (52) made from volumetric index semiconductor material, and a layer (53) made from volumetric absorption semiconductor material, the two layers (52, 53) being situated one above another and not being phase-shifted with respect to one another.

Abstract: A cable exit trough is mountable to a lateral trough section either during initial assembly of the cable routing system, or at a later date. The exit trough includes a bracket portion mountable to the top edge of one of the sides of the lateral trough section. Two lead-ins are provided to lead the cable in an upward direction from the lateral trough section to the exit trough. The exit trough includes an exit trough portion extending from the bracket portion upwardly away from the lateral trough section. The exit trough portion includes a convexly curved bottom trough surface, and two convexly curved upstanding sides. The exit trough portion and the lead-ins define a cable pathway from the lateral trough section to an exit point of the exit trough portion which can either lead downwardly relative to the lateral trough section, or horizontally.

Abstract: A complex coupled (gain coupled or loss coupled) distributed feedback (DFB) semiconductor laser, having two sections axially distinct along a cavity length direction, and two excitation means for independent pumping of corresponding sections of the laser in a master and slave type of pumping control, is provided. An extended continuous wavelength tuning range of the laser is obtained by selectively activating a left Bragg mode or a right Bragg mode across the stop band of the laser as a dominant lasing mode by the master and slave type of current injection control into different sections of the laser to alternate gain coupling and loss coupling mechanisms of laser operation, and further tuning a wavelength around the activated Bragg mode. Methods of operating the laser, enhancing a tuning range, and fabricating thereof are provided.

Abstract: A vertical cavity surface emitting laser (VCSEL) with an integrated phase shift mask for use in an optical pickup head for high density optical storage applications and a method of fabrication. The VCSEL is capable of emitting a power output of at least 10 mW. The phase shift mask is integrated with the VCSEL to allow for a 180.degree. shift in light emitted therethrough, thereby creating a reduced focal spot size for high density data write applications. The VCSEL with integrated phase shift mask is utilized in an optical pickup head capable of high density read and write applications for both CDs and DVDs.

Abstract: The present invention relates to a laser diode driving circuit for supplying a drive current to a laser diode, a semiconductor integrated circuit for driving the laser diode, and an image recording apparatus in which a step of executing a scanning on a predetermined member to be scanned with a laser beam holding image information is included in an image recording step. The laser diode is certainly kept in a no light emitting state at a timing when the laser diode should be kept in the no light emitting state and is allowed to emit a laser beam of the light quantity faithfully corresponding to the drive current at a timing when the drive current is supplied to the laser diode. A bias current out of the bias current and a drive current which are supplied to a laser diode 1 is further divided into a first bias current and a second bias current. Normally, only the first bias current is supplied to the laser diode. The second bias current is supplied and stopped in a manner similar to the drive current.

Abstract: A VCSEL for emitting long wavelength light including a GaAs substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack, and a second cladding region. The first and second cladding regions including an InGaP/GaAs material system. The active structure includes a nitride based quantum well and either a GaAsP or a GaAs barrier layer. A second mirror stack is lattice matched to the second cladding region and has mirror pairs in a GaAs/AlGaAs material system.

Abstract: A semiconductor laser having: a group III-V semiconductor substrate; a group III-V semiconductor clad layer disposed on the substrate with a lattice mismatch of 0.5% or more; group III-V semiconductor light propagation layers disposed on the clad layer, including an active layer and light confining layers on both sides of the active layer, the light confining layers containing Al as the group III element; a group III-V semiconductor buffer layer disposed between the substrate and the clad layer, the buffer layer including a composition graded layer gradually changing the lattice constant, and having a cross hatched step on the surface thereof; and an intermediate layer of group III-V semiconductor disposed between the buffer layer and the clad layer, the intermediate layer containing phosphorous as the group V element. A semiconductor laser of 1 .mu.

Abstract: A semiconductor laser includes a lower cladding layer, an active layer, a first upper cladding layer, an etch-stopping layer, a second upper cladding layer, and a contact layer successively laminated on a substrate, a ridge waveguide formed by selectively etching the second upper cladding layer and the contact layer with the use of a stripe-like insulating film as a mask to form a ridge, an AlAs oxide layer on the substrate and a second electrode on the substrate. Incorrect positioning does not occur between the ridge waveguide and a first electrode, reliability is improved, and the distribution of effective refractive index transverse to the resonation of the laser is reduced. A detailed method of fabricating this semiconductor laser is also provided.

Abstract: The sleeve housing is made of a resilient plastic material, and it has a cylindrical end portion. The cylindrical portion is split, whereby the split portions can be deformed to allow for the insertion of an alignment sleeve containing an attenuating element. The internal portions of the deformable portion of the cylindrical outer portion of the sleeve housing include shoulders which will capture and retain the alignment sleeve when the alignment sleeve has been inserted into the end of the sleeve housing. Consequently, the sleeve housing is able to retain the alignment sleeve without the need for a separate retainer piece. An advantage of the present invention is that a ganged sleeve housing can be made in which there are several connectors which are formed adjacent to one another on a single molded assembly.