Abstract: It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.

Abstract: A system for decapsulating a portion of an encapsulated integrated circuit that includes copper elements has one or more containers holding specific etchant solutions, a pump having an inlet port connected to the one or more containers holding specific etchant solutions, and an outlet port, a temperature-controlled metal block having a fluid inlet connected to the pump outlet port, and an outlet port from the block, and control circuitry enabling control of temperature of the metal block and operation of the pump, and flow and temperature sensors coupled to the control circuitry. Etchant temperature at the outlet of the metal block is controlled to be at or below ambient temperature by controlling the pump and temperature of the metal block, and etchant mixture is delivered via a delivery conduit to an encapsulation surface of an encapsulated integrated circuit, decapsulating a portion of encapsulated circuit, minimizing damage to the copper elements.

Abstract: The present disclosure provides a cleaning unit for a chemical mechanical polishing (CMP) process. The cleaning unit comprises a cleaning solution; a brush configured to scrub a wafer during the CMP process; and a spray nozzle configured to apply the cleaning solution to the wafer when the brush scrubs the wafer during the CMP process. In some embodiments, the spray nozzle includes an inlet where the cleaning solution enters the spray nozzle and an outlet where the cleaning solution exits the spray nozzle. In some embodiments, an inlet area (A0) is different from an outlet area (A1).

Abstract: Systems and methods are provided for performing chemical-mechanical planarization. An example system includes: a polishing head, a polishing pad, a slurry distribution component, and a reactant distribution component. The polishing head is configured to perform chemical-mechanical planarization on an article. The polishing pad is configured to support the article. The slurry distribution component is configured to provide a slurry on the polishing pad. The reactant distribution component is configured to provide an oxidizer material on the polishing pad to generate a plurality of radicals to react with the article.

Abstract: A chemical mechanical planarization (CMP) apparatus is provided. The CMP apparatus includes at least one platen; and a polishing pad disposed on the platen. The CMP apparatus also includes a polishing head disposed above the platen and configured to clamp a to-be-polished wafer; and a basic solution supply port disposed above the platen and configured to supply a basic solution onto a surface of the polishing pad. Further, the CMP apparatus includes a slurry arm disposed above the platen and configured to supply a polish slurry on the surface of the polishing pad; and a deionized water supply port configured to supply deionized water onto the surface of the polishing pad. Further, the CMP apparatus also includes a negative power source configured to apply a negative voltage onto the surface of the polishing pad.

Abstract: Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.

Abstract: A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract: A ceramic member 30 according to the present invention includes a ceramic base 32, which contains a solid solution Mg(Al)O(N) in which Al and N components are dissolved in magnesium oxide as the main phase, and an electrode 34 disposed on a portion of the ceramic base 32 and containing at least one of nitrides, carbides, carbonitrides, and metals as an electrode component. The ceramic base 32 may have an XRD peak of a (111), (200), or (220) plane of Mg(Al)O(N) measured using a CuK? ray at 2?=36.9 to 39, 42.9 to 44.8, or 62.3 to 65.2 degrees, respectively, between a magnesium oxide cubic crystal peak and an aluminum nitride cubic crystal peak.

Abstract: An apparatus and method for processing wafer-shaped articles utilizes at least first and second liquid-dispensing nozzles, wherein a first liquid-dispensing nozzle is positioned closer to an axis of rotation than the second liquid-dispensing nozzle. A liquid supply system supplies heated process liquid to the nozzles such that process liquid dispensed from the first nozzle has a temperature that differs by an amount within a predetermined range from a temperature of process liquid dispensed from the second liquid-dispensing nozzle.

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract: A substrate processing apparatus has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material or semiconductor material. Hydrophilic treatment may be performed on an outer annular surface of the cup part and water may be held on the outer annular surface of the cup part while processing the substrate. With the disclosed apparatus, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

Abstract: A heating processing performed on an outer peripheral portion of a substrate can be optimized. A substrate processing apparatus includes a holding unit configured to hold a substrate; a rotation unit configured to rotate the holding unit; a processing liquid supply unit configured to supply a processing liquid onto the substrate held in the holding unit; and a heating device configured to heat an outer peripheral portion of the substrate held in the holding unit. Further, the heating device includes a discharge flow path through which a gas is discharged toward the outer peripheral portion of the substrate held in the holding unit; a branch flow path through which a gas is discharged toward a region other than the substrate held in the holding unit; and a heating unit configured to heat the discharge flow path and the branch flow path.

Abstract: Stripping structure strips insulation from ends of a plurality of leads of a lead bundle. Each lead includes a conductor member coated with the insulation. The structure includes a housing having wall structure defining a stripping chamber, an inlet in fluid communication with the stripping chamber, and an outlet in fluid communication with the stripping chamber. A cover has an opening for receiving an end of the lead bundle in a sealing manner so that the leads thereof are received in the stripping chamber. Chemical stripping solution is in communication with the inlet. When the lead bundle is received through the opening with the leads in the stripping chamber and when the chemical stripping solution is provided though inlet and in the stripping chamber, the chemical stripping solution strips the insulation from the conductor members, with the stripping solution along with stripped insulation exiting through the outlet.

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

Abstract: A device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers includes a gas inlet element having a housing cavity enclosed by housing walls, into which a gas feed line opens, through which a gaseous, in particular carbonaceous starting material can be fed into the housing cavity, having a plasma generator, which has components arranged at least partially in the housing cavity, which has at least one plasma electrode to which electrical voltage can be applied, to apply energy to the gaseous starting material by igniting a plasma and thus converting the gaseous starting material into a gaseous intermediate product, and having a gas outlet surface having a plurality of gas outlet openings, through which the gaseous intermediate product can exit out of the housing cavity. A gas heating unit is provided for assisting the conversion, which is arranged downstream of the components.

Abstract: A substrate holding unit of a liquid processing apparatus holds a circular substrate horizontally and rotates the substrate about a vertical axis, and a chemical liquid nozzle supplies a chemical liquid to the peripheral edge of the substrate while the substrate is being rotated in order to remove a film of the peripheral edge. An image capture unit captures an image of the peripheral edge, and a determination unit calculates an actually removed value for a removed width of the film based on a result of the image capturing and determines whether the removed width is suitable or not.

Abstract: A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.

Abstract: A liquid treatment apparatus includes a substrate holder (21) that holds a substrate horizontally and rotates the substrate, a treatment liquid nozzle (82) that supplies a treatment liquid to the substrate held by the substrate holder, a cup (40) that is arranged outside of a peripheral edge of the substrate held by the substrate holder and receives the treatment liquid which has been supplied to the substrate by the treatment liquid nozzle, a top plate (32) that covers the substrate held by the substrate holder from above, a top plate rotation driving mechanism that rotates the top plate, and a liquid receiving member (130) that surrounds a peripheral edge of the top plate and has a circular liquid receiving space (132).