Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.

Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.

Abstract: Disclosed is a method for estimating twin defect density in a single-crystal sample, including: (A) etching the observed surface of a single crystal to form etch pits; (B) selecting bar-shaped etch pits caused by twin defect; (C) from the long-axis direction lengths of the etch pits caused by twin defect, estimating the twin defect density by using the following equation: twin defect density=?kx?i/area of sample, wherein 2?k?3, and x?i is the long-axis direction length of an etch pit caused by the i-th twin.

Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.

Abstract: A display panel includes a first display region, a second display region partially surrounding the first display region, and a third display region partially surrounding the first and second display regions. The first display region has a larger light transmittance than the third display region, and the first display region includes an effective light-transmission region and a wiring region located on at least one side of the effective light-transmission region. The display panel includes first and second pixel circuits in the second display region; third pixel circuits in the third display region; first data lines, connected to the first and third pixel circuits; and second data lines, connected to the second and third pixel circuits. Each first data line includes a first sub-data line in the wiring region, a second sub-data line in the second display region, and a third sub-data line in the third display region.

Abstract: Provided is an organic light emitting display device. The organic light emitting display device includes a plurality of sub-pixels, an anode disposed in each of the plurality of sub-pixels, a bank layer covering an edge of the anode and defining emission areas, an organic emission layer disposed on the anode, and a cathode disposed on the organic emission layer. Each of sub-pixels includes a respective one of the emission areas and a respective non-emission area. A minor axis length of the emission area in the first sub-pixel, that of the emission area in the second sub-pixel and that of the emission area in the third sub-pixel are identical to each other. A major axis length of the emission area in the first sub-pixel, that of the emission area in the second sub-pixel and that of the emission area in the third sub-pixel are different from each other.

Abstract: A display device includes: pixel circuits in a display area, the pixel circuits each comprising a thin film transistor and a capacitor, the thin film transistor including a semiconductor layer and a gate electrode on the substrate and the capacitor including a first capacitor plate and a second capacitor plate; signal lines electrically connected to the pixel circuits, the signal lines passing through the display area; a lower metal layer between the substrate and at least one of the pixel circuits; a pad portion in the peripheral area; and a plurality of wirings in the peripheral area, the plurality of wirings electrically connecting the pad portion to the signal lines, wherein the plurality of wirings further comprise: a first wiring at a same layer as the lower metal layer; and a second wiring above the first wiring with a first insulating layer between the first wiring and the second wiring.

Abstract: A cage can be positioned around a medical balloon, such as an angioplasty balloon, to assist in a medical procedure. The cage can include a plurality of strips, each extending between a set of rings including first and second rings. As the balloon expands, the first and second rings move closer together and allow the strips to expand outward. The cage may have wedge dissectors on the strips.

Abstract: An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.

Abstract: A display device includes: a plurality of pixels each including a driving thin film transistor and a storage capacitor, wherein each of the pixels further includes: a driving semiconductor layer including a driving channel region, a driving source region, and a driving drain region; a first electrode layer, a portion of the first electrode layer overlapping the driving channel region; a second electrode layer overlapping the first electrode layer; a node connection line having a first side connected to the first electrode layer; a pixel electrode overlapping the first electrode layer and the second electrode layer; and a shielding layer between the first electrode layer and the pixel electrode and overlapping the first electrode layer, the node connection line, and the pixel electrode.

Abstract: A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

Abstract: A multi-piece IOL assembly is provided that includes a platform and an optic. The platform has an inner periphery surrounding an inner zone of the platform. The optic has an optical zone, an outer periphery and a retention mechanism disposed on the outer periphery. The optic is configured to be disposed in the inner zone of the platform and to extend to a location between the inner periphery and the outer periphery of the platform to be secured to the platform at the location. The platform can be secured to an inner periphery of the eye or can be formed into a natural lens by cutting the lens using a laser or other energy source.

Abstract: A display apparatus includes a substrate defining an opening area and including a display area and an intermediate area between the opening area and the display area; an inorganic insulating layer in the display area and the intermediate area; a pixel circuit in the display area; an organic insulating layer on the pixel circuit; a pixel electrode on the organic insulating layer, an intermediate layer on the pixel electrode, and an opposite electrode on the intermediate layer; a thin-film encapsulation layer on the opposite electrode and comprising a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first and second inorganic encapsulation layer; and a partition wall on the organic insulating layer and including at least two dams, wherein the inorganic insulating layer is in contact with the thin-film encapsulation layer in an area between the partition wall and the opening area.

Abstract: Embodiments of the disclosed subject matter provide a full-color pixel arrangement for a device, the full-color pixel arrangement including a plurality of sub-pixels, each having an emissive region of a first color, where the full-color pixel arrangement comprises emissive regions having exactly one emissive color that is a red-shifted color of a deep blue sub-pixel of the plurality of sub-pixels. Embodiments of the disclosed subject matter may also provide a full-color pixel arrangement for a device, the full-color pixel arrangement including a plurality of sub-pixels, each having an emissive region of a first color, where the full-color pixel arrangement comprises emissive regions having exactly one emissive color, and where the plurality of sub-pixels comprise a light blue sub-pixel, a deep blue sub-pixel, a red sub-pixel, and a green sub-pixel.

Abstract: A display device includes a display panel including a plurality of pixels. At least one of the pixel includes a light emitting diode, a first transistor connected between a power line receiving a power source voltage and an anode of the light emitting diode, a second transistor connected between a data line and a first reference node, a first capacitor connected between the power line and the first reference node, a second capacitor connected between the first reference node and a second reference node, a third transistor connected between the first reference node and a reference voltage line receiving a reference voltage, a fourth transistor connected between an initialization voltage line receiving an initialization voltage and a drain of the first transistor, and a fifth transistor connected between the drain of the first transistor and the anode of the light emitting diode.

Abstract: An organic light emitting diode device can have an enhanced thin film encapsulation layer for preventing moisture from permeating from the outside. The thin film encapsulation layer can have a multilayered structure in which one or more inorganic layers and one or more organic layers are alternately laminated. A barrier can be formed outside of a portion of the substrate on which the organic light emitting diode is formed. The organic layers of the thin film encapsulation layer can be formed inside an area defined by the barrier.

Abstract: Embodiments of the invention are directed to a semiconductor-based structure. A non-limiting example of the semiconductor-based structure includes a fin formed over a substrate. A tunnel is formed through the fin to define an upper fin region and a lower fin region. A gate structure is configured to wrap around a circumference of the upper fin region.

Abstract: The disclosure discloses an array substrate, an OLED display panel and a display device. A storage capacitor includes a first capacitor and a second capacitor which are connected in parallel, wherein the first capacitor includes a storage electrode and a first electrode, a layer where the first electrode is located is same as a layer where the grid electrode of the driving transistor is located, the second capacitor includes the storage electrode and a second electrode, a layer where the second electrode is located is same as a layer where the power supply voltage line is located, and the first electrode and the second electrode are electrically connected through a via hole penetrating through a first insulating layer and a second insulating layer.

Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.

Abstract: An organic light-emitting display device includes a driving transistor configured to control current to an organic light-emitting diode from a power voltage line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to a compensation gate electrode of the driving transistor, and a gate insulating layer interposed between a driving active region of the driving transistor and the driving gate electrode, and between a compensation active region of the compensation transistor and the compensation gate electrode. A dielectric constant in a first portion of the gate insulating layer between the driving active region and the driving gate electrode is greater than a dielectric constant in a second portion of the gate insulating layer between the compensation active region and the compensation gate electrode.