Patents Examined by T. M. Henn
  • Schottky power diode
    Patent number: 4618871
    Abstract: A Schottky power diode includes a semiconductor substrate, an insulating layer disposed on the substrate, a Schottky contact making contact with the substrate through a window formed in the insulating layer, and a semi-insulating layer disposed on the insulating layer and electrically connected to the Schottky contact for receiving a fixed potential at a lateral distance from the Schottky contact.
    Type: Grant
    Filed: May 16, 1983
    Date of Patent: October 21, 1986
    Assignee: Siemens Aktiengesellschaft
    Inventor: Heinz Mitlehner