Abstract: Positive-working photoresist elements are protected against reflection of activating radiation from the substrate by incorporation of certain butadienyl dyes in a photoresist layer, an anti-reflective layer or a planarizing layer. These dyes have superior resistance to thermal degradation or volatilization at temperatures of as high as 200.degree. C. or more. The dyes also exhibit good solubility in solvents commonly employed in processing semiconductor devices, thus permitting the dyes to be incorporated in photoresist elements in an amount sufficient to prevent resist image distortion caused by backscattered or reflected light.