Patents Examined by Tarifur Chowdury
  • Patent number: 8867041
    Abstract: An optical metrology apparatus for measuring nanoimprint structures using Vacuum Ultra-Violet (VUV) light is described. Focusing optics focus light onto the sample and collect the light reflected from the sample so as to record an optical response from nanoimprint structures on the sample, wherein the nanoimprint structures have an orientation that varies over a surface of the sample. A sample stage is configured to support the sample. At least one computer is connected to the metrology instrument and the sample stage and is configured to run a computer program which causes the sample stage to rotate the sample so as to present multiple different locations on the sample to the optical metrology instrument such that the orientation of the nanoimprint structures at the multiple different locations remains fixed with respect to a plane of the focusing optics of the metrology instrument in order to eliminate polarization effects.
    Type: Grant
    Filed: January 15, 2012
    Date of Patent: October 21, 2014
    Assignee: Jordan Valley Semiconductor Ltd
    Inventors: Phillip Walsh, Jeffrey B. Hurst, Dale A. Harrison
  • Patent number: 7855779
    Abstract: A display device includes display pixels that display an image on a display screen. First and second optical sensors correspond to one or more of the display pixels and detect the amount of incident light. An optical member allows light coming from a first direction to enter the first optical sensors and light coming from a second direction to enter the second optical sensors. A memory circuit stores a first detection result that is detected in a first time period by means of the first optical sensors and stores a second detection result that is detected in the first time period by means of the second optical sensors. A comparison circuit compares sequential detection results to permit a judgment circuit to determine whether the display screen has been touched with a detection target medium.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: December 21, 2010
    Assignee: Seiko Epson Corporation
    Inventor: Ryoichi Nozawa
  • Patent number: 7826044
    Abstract: A measurement method for measuring an optical characteristic of a target optical system includes the steps of introducing a light from each of plural patterns that reduce diffracted lights other than a predetermined order, to a different position on a pupil plane of the target optical system, the introducing step including the step of scanning the light in a radial direction in the pupil plane of the target optical system, detecting a imaging position of the light introduced by the introducing step, on an image plane of the target optical system, and obtaining the optical characteristic of the target optical system based on a detection result of the detecting step.
    Type: Grant
    Filed: August 24, 2006
    Date of Patent: November 2, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventor: Yoshihiro Shiode
  • Patent number: 7773217
    Abstract: A probe of a Raman spectroscopy system has a wavelength and/or amplitude referencing system for determining a wavelength of the excitation signal. Preferably, this referencing system is near an output aperture, through which the excitation signal is transmitted to the sample. In this way, any birefringence or polarization dependent loss (PDL) that may be introduced by optical elements in the system can be compensated for since the wavelength reference system will detect the effect or impact of these elements.
    Type: Grant
    Filed: February 17, 2006
    Date of Patent: August 10, 2010
    Assignee: Axsun Technologies, Inc.
    Inventors: Tirunelveli S. Sriram, David A. Coppeta, James Zambuto
  • Patent number: 5982462
    Abstract: A thin film transistor device with its leakage current being controlled is provided. With such a thin film transistor device incorporated, a liquid crystal display apparatus presents a high-contrast image at a reduced power consumption. The thin film transistor is formed on an insulating substrate. The gate electrode of the transistor is electrically floating gate electrode, which is capacitance coupled to one or more input electrodes. The liquid crystal display apparatus incorporates the thin film transistor in its switching element and/or driving circuit.
    Type: Grant
    Filed: March 6, 1997
    Date of Patent: November 9, 1999
    Assignees: Frontec Incorporated, Tadashi Shibata, Tadahiro Ohmi
    Inventors: Akira Nakano, Tadashi Shibata, Tadahiro Ohmi