Abstract: A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor.
Type:
Grant
Filed:
February 11, 2009
Date of Patent:
October 25, 2011
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Seung-Hwan Cho, Bo-Sung Kim, Jung-Han Shin, Ju-Han Bae