Patents Examined by Thanh-Nhah Nguyen
  • Patent number: 8045105
    Abstract: A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: October 25, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Hwan Cho, Bo-Sung Kim, Jung-Han Shin, Ju-Han Bae