Abstract: The present disclosure provides a cap assembly for a secondary battery and a secondary battery. The cap assembly includes a cap plate, an electrode terminal, a fixing member, a sealing member and a connecting member, wherein: the cap plate has an electrode lead-out hole; the fixing member is fixed to the cap plate through the connecting member; the electrode terminal includes a terminal board, wherein an outer peripheral surface of the terminal board is surrounded at least in part by the fixing member to fix the electrode terminal to the fixing member, the terminal board is located at a side of the cap plate and covers the electrode lead-out hole, and the outer peripheral surface of the terminal board protrudes out of an inner wall of the electrode lead-out hole; and the sealing member is disposed between the terminal board and the cap plate to seal the electrode lead-out hole.

Abstract: A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.

Abstract: The present invention relates to a photovoltaic device (1). The device comprises a solar cell unit (2) comprising a porous light-absorbing layer (3) at a top side (2a), of a porous first conducting layer (4), a porous substrate (5) of an insulating material. The solar cell unit comprises a conducting medium. The photovoltaic device comprises a first conductor (7) in electrical contact with the first conducting layer (4), a second conductor (8) in electrical contact with the second conducting layer (6), and an encapsulation (9) encapsulating the solar cell unit. The encapsulation comprises a top sheet (9a) and a bottom sheet (9b). The first and second conductors (7, 8) are arranged between the encapsulation (9) and the solar cell unit (2) at the bottom side (2b) of the solar cell unit (2).

Abstract: A solar thermoelectric power generation system includes roofing products such as shingles with solar heat reflective areas and roofing products with solar heat absorptive areas. Thermoelectric power generating elements are provided in thermal contact with the solar heat reflective areas and the solar heat absorptive areas.

Abstract: The present disclosure provides methods for forming sol-gels, sol-gel films and substrates, such as vehicle components, having a sol-gel film disposed thereon. At least one method of forming a sol-gel includes mixing a metal alkoxide, an acid stabilizer, and an organic solvent to form a first mixture having about 10 wt % or less water content based on the total weight of the first mixture. The method includes mixing an organosilane with the first mixture to form a second mixture having about 10 wt % or less water content based on the total weight of the second mixture.

Abstract: A method of forming a multijunction solar cell that includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another adjacent solar subcell.

Abstract: A solar cell includes a substrate having a front surface and a back surface; an emitter formed on the front surface of the substrate; a plurality of first electrodes positioned on the emitter and extended in first direction; a plurality of first bus lines positioned on the emitter and extended in second direction crossing to the first direction; a plurality of back surface field regions formed on the back surface of the substrate and extended in the first direction; a plurality of second electrodes positioned on the plurality of back surface field regions and extended in the first direction; and, a plurality of second bus lines extended in the second direction.

Abstract: Operations for integrating thermoelectric devices in Fin FET technology may be implemented in a semiconductor device having a thermoelectric device. The thermoelectric device includes a substrate and a fin structure disposed on the substrate. The thermoelectric device includes a first connecting layer and a second connecting layer disposed on opposing ends of the fin structure. The thermoelectric device includes a first thermal conductive structure thermally and a second thermal conductive structure thermally coupled to the opposing ends of the fin structure. The fin structure may be configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the fin structure. In this regard, the current flow may be adjusted by a power circuit electrically coupled to the thermoelectric device.

Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.

Abstract: A thermoelectric conversion element includes: a thermoelectric member that is columnar; an insulator formed around the thermoelectric member; and a metal layer formed continuously on an edge surface of the thermoelectric member and an edge surface of the insulator. An edge portion of the thermoelectric member and an edge portion of the insulator define a gap covered with the metal layer. The inner portion of the gap covered with the metal layer is a void.

Abstract: Disclosed is a solar cell. The solar cell includes a semiconductor substrate, conductivity-type regions located in or on the semiconductor substrate, electrodes conductively connected to the conductivity-type regions, and insulating films located on at least one of opposite surfaces of the semiconductor substrate, and including a first film and a second film located on the first film, the second film has a higher carbon content than that of the first film, a refractive index of the second film is equal to or less than a refractive index of the first film, and an extinction coefficient of the second film is equal to or greater than an extinction coefficient of the first film.

Abstract: A solar cell including: a silicon substrate; a back electrode; a doped silicon layer; an upper electrode, wherein the upper electrode includes a plurality of three-dimensional nanostructures extending along a same direction; an electrode lead, wherein a direction of the electrode lead intersects with the direction of the plurality of three-dimensional nanostructures; wherein the three-dimensional nanostructures includes a first rectangular structure, a second rectangular structure, and a triangular prism structure; the first rectangular structure, the second rectangular structure, and the triangular prism structure are stacked, a first width of a bottom surface of the triangular prism structure is equal to a second width of a top surface of the second rectangular structure, and is greater than a third width of a top surface of the first rectangular structure, materials of the first rectangular structure and the triangular prism structure are metal.

Abstract: The present disclosure provides methods for forming sol-gels, sol-gel films and substrates, such as vehicle components, having a sol-gel film disposed thereon. At least one method of forming a sol-gel includes mixing a metal alkoxide, an acid stabilizer, and an organic solvent to form a first mixture having about 10 wt % or less water content based on the total weight of the first mixture. The method includes mixing an organosilane with the first mixture to form a second mixture having about 10 wt % or less water content based on the total weight of the second mixture.

Abstract: Aspects of the subject disclosure may include, for example, an apparatus comprising: a membrane having a first side and a second side, wherein the membrane has first and second pores disposed therein, a processing system; and a memory that stores executable instructions that, when executed by the processing system, facilitate performance of operations comprising: setting a first physical characteristic in a vicinity of the first pore to cause a first end of a molecule having the first end and a second end to be moved through the first pore; setting a second physical characteristic in a vicinity of the second pore to cause the second end of the molecule to be moved through the second pore; and adjusting the first physical characteristic to cause the molecule to be tightened, with a first given amount of force, between the first pore and the second pore. Additional embodiments are disclosed.

Abstract: Provided is a microfluidic device that, as compared with a conventional microfluidic device, (i) is smoother in surface of a water-repellent layer provided above a segment electrode and (ii) makes it easier for microfluid provided in the surface of the water-repellent layer to slide. A microfluidic device (1) includes: an array substrate (10) including a plurality of electrodes (14); and a counter substrate (40) including at least one electrode (42), the array substrate (10) and the counter substrate (40) having therebetween an internal space (50) in which to cause an electroconductive droplet (51) to move across the plurality of electrodes (14), and the plurality of electrodes (14) being provided on a first flattening resin layer (13) and each being a light-blocking metal electrode.

Abstract: A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.

Abstract: Present invention discloses a microfluidic energy harvester for converting solar energy into electrical energy. A preferred embodiment of the present microfluidic energy harvester includes a substrate having an embedded central microchannel, electrolyte configured to reside and/or flow in said central microchannel and electrode assembly having one or more pair of electrodes arranged in a series and integrated with said central microchannel from sides ensuring direct contact between said pair for electrodes with said electrolyte while it reside and/or flow in said central microchannel for ensuing electrochemical photovoltaic effect to convert the solar energy into the electrical energy under direct solar illumination by working under regenerative conditions.

Abstract: A silicon solar cell with high photoelectric conversion efficiency is disclosed. A solar cell for converting light incident from an outside into electricity according to the present invention includes a substrate, a lower electrode, a ferroelectric layer, an auxiliary electrode, a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an upper electrode. The lower electrode is formed on the substrate. The ferroelectric layer is formed on the substrate and outside the lower electrode. The auxiliary electrode is formed on the ferroelectric layer. The first conductivity-type semiconductor layer is formed on the lower electrode and the auxiliary electrode. The second conductivity-type semiconductor layer is formed on the first conductivity-type semiconductor layer, and is composed of a semiconductor of a second conductivity type opposite to a first conductivity type.

Abstract: Refractive optical element designs are provided for high geometric optical efficiency over a wide range of incident angles. To minimize Fresnel reflection losses, the refractive optical element designs employ multiple encapsulant materials, differing in refractive index. Concentrator photovoltaic subassemblies are formed by embedding a high efficiency photovoltaic device within the refractive optical element, along with appropriate electrical contacts and heat sinks. Increased solar electric power output is obtained by employing a single-junction III-V material structure with light-trapping structures.

Abstract: The invention is notably directed to a microfluidic device. The device comprises a substrate with a microchannel formed as a groove on a main surface of the substrate. The device further comprises one or more conduits extending parallel to the main surface of the substrate, and from a lateral surface of the substrate up to a lateral wall of the microchannel. The one or more conduits are configured so as to allow insertion of one or more electrodes therein, respectively, and such that an end of each of the one or more electrodes can reach into the microchannel. The invention is further directed to related sets of components, which include the above microfluidic device, as well as a housing, with electronics, and, possibly, a porous support (e.g., a membrane) and a cap. Biosensing applications are notably contemplated. The invention is further directed to methods of operating a microfluidic device.