Abstract: A method for forming a residue free patterned polysilicon layer upon a high step height patterned substrate layer. First, there is provided a semiconductor substrate having formed thereon a high step height patterned substrate layer. Formed upon the high step height patterned substrate layer is a polysilicon layer, and formed upon the polysilicon layer is a patterned photoresist layer. The patterned photoresist layer exposes portions of the polysilicon layer at a lower step level of the high step height patterned substrate layer. The polysilicon layer is then patterned through the patterned photoresist layer as an etch mask employing an anisotropic first etch process to yield a patterned polysilicon layer upon the surface of the high step height patterned substrate layer and polysilicon residues at the lower step level of the high step height patterned substrate layer.

Abstract: The present invention relates to a method of a sequencial WSi/.alpha.-Si sputtering process, more particularly to a method of in-situ wafer cooling for a sequencial WSi/.alpha.-Si sputtering process. A sputtering process of WSi and a sputtering process of .alpha.-Si are finished in a multi-chamber sputtering apparatus according to the invention; meanwhile, a wafer is cooled down by bolwing of inert gas before a process of sputtering .alpha.-Si starts. Thus, compared to traditional art of finishing WSi/.alpha.-Si sputtering in two apparatus, partial time of vacuuming and venting required in a sputtering process is saved according to the invention, thereby, shortening the production cycle time, reducing the possibility of wafer contamination, and suppressing the fabricating cost.