Patents Examined by Thomas J. Magee
  • Methods for forming conductive structures and structures regarding same
    Patent number: 6534357
    Abstract: A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g., ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal layer, e.g., platinum, to oxidize a metal layer thereon, e.g, ruthenium layer. The structure is particularly advantageous for use in capacitor structures and memory devices, such as dynamic random access memory (DRAM) devices.
    Type: Grant
    Filed: November 9, 2000
    Date of Patent: March 18, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Cem Basceri, Gurtej Sandhu