Abstract: A composite silicon-on-insulator substrate comprises first and second substrates and an oxide film interposed between them. The second substrate is partially removed, such that a lever-base section is formed. An oxide film is formed on the sides of the lever-base section. The second substrate has its thickness set to a predetermined value by wet anisotropic etching, such that a pre-lever section is formed and such that a probe-base section is formed at one end of the pre-lever section. An oxide film is formed on the pre-lever section and the probe-base section, such that a lever section with a desired thickness and a probe section with a sharpened tip are formed. A part of the first substrate is etched away, such that a support section is formed. The oxide film covering the lever section and the probe section is removed.