Patents Examined by Thong Lei
  • Semiconductor memory device achieving fast random access
    Patent number: 6781894
    Abstract: N-channel MOS transistors in a read gate circuit have respective sources connected to a sense amplifier activation line of a sense amplifier, not to a ground node. A read column selection line is selected prior to activation of the sense amplifier. Accordingly, paired read data lines are driven simultaneously with the activation of the sense amplifier.
    Type: Grant
    Filed: March 21, 2003
    Date of Patent: August 24, 2004
    Assignee: Renesas Technology Corp.
    Inventor: Yasuhiko Taito