Abstract: The present invention provides a bonding structure between a bonding pad and a bonding portion of a bonding wire made of an Au-base material, wherein said bonding pad further comprises: a base layer; at least a barrier layer overlying said base layer; and a bonding layer overlying said at least barrier layer, said bonding layer including an Al-base material, and wherein said bonding portion of said bonding wire is buried in said bonding layer, and an Au—Al alloy layer extends on an interface between said bonding portion and said bonding layer, and a bottom of said Au—Al alloy layer is in contact with or adjacent to an upper surface of said barrier layer.
Type:
Grant
Filed:
August 31, 2001
Date of Patent:
January 14, 2003
Assignee:
NEC Compound Semiconductor Devices, Ltd.