Abstract: A semiconductor device is fabricated using a micro-masking structure. The micro-masking structure is formed along the sidewalls of a trench in a semiconductor substrate or along the sidewalls of an electrode disposed over the semiconductor substrate. The micro-masking structure exposes portions of the sidewalls and covers other portions of the sidewalls. Then the exposed portions of the sidewalls are recessed to form a plurality of recesses such that the sidewalls have an increase surface area. After the recessing, the micro-masking structure is removed. The recessed sidewalls provide enhanced capacitance.
Type:
Grant
Filed:
November 14, 2002
Date of Patent:
August 3, 2004
Assignees:
Infineon Technologies North America Corp., International Business Machines Corporation
Inventors:
Michael P. Chudzik, Jochen Beintner, Joseph F. Shepard, Jr.