Abstract: A transistor includes a gate in contact with a substrate. A gate insulating layer is in contact with at least the gate. An inorganic semiconductor layer is in contact with the gate insulating layer. There is a source electrode in contact with a first portion of the inorganic semiconductor layer and a drain electrode in contact with a second portion of the inorganic semiconductor layer, and the source electrode and the drain electrode are separated by a gap. There is a multilayer insulating structure in contact with at least the inorganic semiconductor layer in the gap. The multilayer structure includes an inorganic dielectric layer having a first pattern defining a first area; and a polymer structure having a second pattern defining a second area. The second area is located within the first area and the polymer structure is in contact with the semiconductor layer in the gap.

Abstract: The present invention describes an optically end-pumped laser gain module, comprising a gain medium which is pumped by a light beam that has a larger size on the input face of the medium than on its output face.