Abstract: Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.

Abstract: A light source device includes a laser diode configured to emit a laser light used as an illumination light, a determination unit configured to determine one of a plurality of modes as an operation mode of the laser diode based on usage state of the light source device; and a driver configured to drive the laser diode in a condition that a bias current to the laser diode is applied depending on the operation mode determined by the determination unit.

Abstract: A laser system has a fiber cable, a pump enclosure connected to the fiber cable outside of the pump enclosure, and a laser-head enclosure connected to the fiber cable disposed outside of the laser-head enclosure. The pump enclosure houses a fiber-coupled laser diode configured to produce and convey pump light through the pump enclosure out to the fiber cable. The laser-head enclosure houses a crystal. The pump light, when produced by the laser diode, propagates out from the pump enclosure through the fiber cable into the laser-head enclosure and into the crystal. The crystal produces a laser beam in response to the pump light. The integrated fiber of the laser diode, the fiber cable, and internal fiber of the laser-head enclosure, through which the pump light propagates, may be single-mode fibers, to achieve superior laser system performance with lower frequency and intensity noise than pumping through multimode fibers.

Abstract: A package structure includes a carrier, a housing, an edge-emitting laser, first and second reflective members and a diffractive optical element. The housing disposed on a mounting surface of the carrier has a receiving space and a top surface, which has an opening and a center line perpendicular to the top surface and the mounting surface. The edge-emitting laser disposed in the receiving space and on the mounting surface has a light-emitting surface emitting a laser beam. The first reflective member is disposed in the receiving space and spaced apart from the light-emitting surface. The second reflective member is disposed in the receiving space and located on the center line above the edge-emitting laser. The diffractive optical element is disposed on the top surface. The laser beam reflected by the first and second reflective members passes through the diffractive optical element to emit out of the housing.

Abstract: In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

Abstract: In various embodiments, monitoring of one or more secondary diffracted beams formed within a laser resonator provides information based at least in part on which a primary diffracted beam formed within the laser resonator is controlled.

Abstract: A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2<Eg3 is satisfied, where Eg2 and Eg3 denote maximum values of band gap energy of the second semiconductor layer and the third semiconductor layer, respectively. The third semiconductor layer includes a first region layer in which band gap energy monotonically decreases toward the fourth semiconductor layer. N2>N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.

Abstract: A light emitting device includes a package body, a light-transmissive cover, one or more semiconductor laser elements, a wavelength converting member, a wiring, electrically conductive layers, an opaque electrically insulating member, and electrodes. The light-transmissive cover is secured to the package body. The wavelength converting member is disposed above the light-transmissive cover in an optical path of the laser light emitted from the semiconductor laser element. The wiring is disposed on a light incidence surface-side of the wavelength converting member. The electrically conductive layers are electrically connected to the wiring and disposed on an upper surface of the light-transmissive cover. The electrically insulating member at least partially covers the electrically conductive layers and the light-transmissive cover.

Abstract: A surface plasmon infrared nano-pulse laser having a multi-resonance competition mechanism, consisting of the four parts of a surface plasmon nano-pin resonance chamber (1), a spacer layer (2), a gain medium (3), and a two-dimensional material layer (4). The surface plasmon nano-pin resonance chamber (1) consists of a metal nano rod (11) and one or more nano sheets (12) grown thereon, the surface plasmon nano-pin resonance chamber (1) and the gain medium (3) being isolated by the isolating layer (2), and the two-dimensional material layer (4) covering a surface of the surface plasmon nano-pulse laser; positive and negative electrodes (5) are located at two ends of the surface plasmon nano-pulse laser, and a layer of a two-dimensional material having a feature of saturatable absorption is introduced to a surface of the nano-pin resonance chamber.

Abstract: A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.

Abstract: Various embodiments of a laser driver are described herein. In an embodiment, a laser driver system includes: an external set of inductors including a first external inductor and a second external inductor; an internal set of inductors including a first internal inductor and a second internal inductor; and a DC-to-DC convertor configured to bias a first output path defined by the first external inductor and the first internal inductor and a second output path defined by the second external inductor and the second internal inductor.

Abstract: A gas purification system may include: a circulation gas pipe in which a second end is connected at a first position to a second pipe through which gas is supplied from a gas supply source; a booster pump; a gas purification unit; a first tank in the circulation gas pipe; a first valve positioned between the gas supply source and the first position, the first valve having an open position and a closed position; and a second valve positioned between the first tank and the second end, the second valve having an open position and a closed position, the second valve configured to be in the closed position when the first valve is in the open position.

Abstract: A circuit conductor is provided on a base. A semiconductor laser is connected to the circuit conductor. Cutout parts on which the circuit conductor is not formed are provided at, for example, the vicinity of the four corners of the base, and a hole is provided at each of the said portions. The holes penetrate the base. Fixing members are inserted through the holes. The fixing members are, for example, male threads. Since the head part of the fixing members is located in the cutout part, the fixing members and the circuit conductor are not in contact with each other. A platform has holes formed at portions corresponding to the holes in the optical unit and female threads formed on the inner surface. The fixing members and the platform are therefore joined. As a result, the optical unit is fixed to the platform.

Abstract: A fiber-laser includes a gain-fiber in a laser-resonator. A polarizer is located in the laser-resonator at an end thereof, causing the output of the fiber-laser to be linearly polarized. A wavelength-selective element is also included in the laser-resonator for selecting an output wavelength of the fiber-laser from within a gain-bandwidth of the gain-fiber.

Abstract: A vertical-cavity surface-emitting laser (“VCSEL”) has at least a substrate, electrical contacts, a first mirror region, a second mirror region and an active region between the mirror regions; where the mirror regions comprise distributed Bragg reflectors formed of a plurality of layers; laser emission is from at least one gallium arsenide antimonide nanostructure in the active region; and each said nanostructure contains more antimony atoms than arsenic atoms.

Abstract: The present invention provides a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. In this invention a violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials is closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source.

Abstract: To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode.

Abstract: An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. The edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10?4 and by at most 5×10?3.

Abstract: A multi-wavelength integrated device (5) including plural semiconductor lasers (6) and plural modulators (7) modulating output beams of the plural semiconductor lasers (6) respectively is mounted on the stem (1). Plural leads (10) penetrates through the stem (1) and are connected to the plural semiconductor lasers (6) and the plural modulators (7) respectively. Each lead (10) is a coaxial line in which plural layers are concentrically overlapped with one another. The coaxial line includes a high frequency signal line (12) transmitting a high frequency signal to the modulator (7), a GND line (14), and a feed line (16) feeding a DC current to the semiconductor laser (6). The high frequency signal line (12) is arranged at a center of the coaxial line. The GND line (14) and the feed line (16) are arranged outside the high frequency signal line (12).

Abstract: A silicon photonic chip includes a silicon on insulator wafer and an electro-optical device on the silicon on insulator wafer. The electro-optical device is a lateral current injection electro-optical device that includes a slab having a pair of structured doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair of structured doped layers includes an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer is configured as a two-dimensional photonic crystal. A separation section extends between the pair of structured doped layers, the separation section fully separates the p-doped layer from the n-doped layer. The separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.