Abstract: A method and a system for automatically controlling mode-locking of an optical frequency comb, where the stored control parameters of the working condition in the mode-locked state is combined with the collected working feedback parameters of the optical frequency comb system to dynamically adjust and control the working power of the pump source or/and the temperature of the working environment of the pump source, which not only greatly shortens the control time for stable mode-locking and realizes a fast mode-locking control, but also reduces unnecessary power consumption, thereby further guaranteeing the energy-saving effect of power adjustment control process. The present disclosure well maintains the stable working conditions of the optical comb system, and realizes the mode-locking optimization control of an update mode for the big data, thereby effectively improving the mode-locking control process of the optical frequency comb system, and providing higher operation stability and measurement accuracy.

Abstract: A multi-wavelength mid-infrared laser pulse train cavity dumped laser based on Nd:MgO:APLN crystal is disclosed. In response to the needs in the field of differential absorption lidar, it is necessary to introduce multi-fundamental frequency light pulse accumulation and superposition, and parametric light synchronization pulse compression technology in the multi-wavelength mid-infrared laser operating mechanism. To this end, a splayed parametric light oscillation cavity formed in conjunction with a Nd:MgO:APLN crystal is disclosed, wherein it is possible to obtain multi-wavelength mid-infrared laser pulse train output with narrow pulse width and high peak power, meeting the needs of differential absorption lidar for mid-infrared lasers.

Abstract: The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.

Abstract: A semiconductor laser device includes a semiconductor laser chip that emits laser light, a plate-like base, and a block protruding from the base and supporting the semiconductor laser chip. The block has a supporting surface and a wire bonding surface. The supporting surface faces a first side in a first direction perpendicular to the laser light emitting direction, and supports the semiconductor laser chip. The wire bonding surface is a surface to which a wire connected to the semiconductor laser chip is connected. The wire bonding surface is shifted in a second direction perpendicular to the emitting direction and the first direction with respect to the supporting surface. The wire bonding surface is inclined relative to the supporting surface, such that the wire bonding surface is more offset to a second side in the first direction with increasing distance from the supporting surface in the second direction.

Abstract: A vertical cavity surface emitting laser (VCSEL) emits laser light. The VCSEL has an optical resonator and a photodiode. The optical resonator has: a first mirror, an active region configured to generate laser light, and a second mirror. The active region is arranged between the first mirror and the second mirror. The photodiode is integrated in the optical resonator. The photodiode has: an absorption region having a plurality of absorbing layers configured to absorb the generated laser light. The absorbing layers are arranged spaced apart from one another by a distance d which satisfies the condition: d=(2k?1)?/(4 m). Where ? is the wavelength of the laser light in the absorption region, and k and m are natural numbers ?1.

Abstract: A laser-based light source (10), comprising: at least one first arrangement (100), for generating light (500), comprising: a laser device (200) for generating laser light (510) of a predetermined laser wavelength and emitting this laser light as a laser beam; and a light-conversion device (210) for converting at least part of the laser light into converted light (520); a second arrangement (110)), for generating at least a first signal (300) and a second signal (310), representative for a different part of the spectrum of said light, from direct measurements on a portion of said light (500); and a controller (120) for receiving the first signal and the second signal, for determining a safe-to-operate parameter, based on the first signal and the second signal, and for controlling the operation of the laser-device based on a comparison between the safe-to-operate parameter and at least one predefined threshold.

Abstract: A semiconductor laser is formed to include a current blocking layer that is positioned below the active region of the device and used to minimize current spreading beyond the defined dimensions of an output beam's optical mode. When used in conjunction with other current-confining structures typically disposed above the active region (e.g., ridge waveguide, electrical isolation, oxide aperture), the inclusion of the lower current blocking layer improves the efficiency of the device. The current blocking layer may be used in edge-emitting devices or vertical cavity surface-emitting devices, and also functions to improve mode shaping and reduction of facet deterioration by directing current flow away from the facets.

Abstract: An optical module unit includes: optical modules each including light emitting elements; and a mount on which the light emitting elements are disposed on one side of the mount, and includes a sub-passage; and a manifold to which the optical modules are fixed. The manifold includes a first main passage to which a first end of each of the sub-passages is connected in parallel.

Abstract: In various embodiments, a laser emitter such as a diode bar is cooled during operation via jets of cooling fluid formed by ports in a cooler on which the laser emitter is positioned. The jets strike an impingement surface of the cooler that is thermally coupled to the laser emitter but prevents direct contact between the cooling fluid and the laser emitter itself.

Abstract: The present disclosure relates to a glass having a refractive index of at least 1.7 as well as the use of the glass as a cladding glass of a solid-state laser. The disclosure also relates to a laser component comprising a core of doped sapphire and a cladding glass being placed on said core. The cladding glass is arranged on said core such that light exiting from the core due to parasitic laser activity can enter the cladding glass and can be absorbed there. Thus, a laser component with improved efficiency is obtained. The present disclosure also relates to a method for producing the laser component.

Abstract: A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm?3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 ?m or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.

Abstract: A method of manufacturing a laser light source includes: providing a submount, the submount having a principal surface on which a laser diode chip is to be fixed, and comprising a pair of lens supports each including an end surface, the end surfaces located at opposite sides with respect to an emission end surface of the laser diode chip; providing a lens having a bonding surface; performing adjustment such that end surfaces of the pair of lens supports of the submount are parallel to a reference plane; performing adjustment such that the bonding surface of the lens is parallel to the reference plane; and while maintaining the end surfaces of the pair of lens supports and the bonding surface of the lens so as to be parallel to the reference plane, bonding the end surfaces with the bonding surface of the lens using an inorganic bonding member.

Abstract: A quasi-monolithic solid-state laser in which the optical components of the laser cavity are bonded to a common substrate via mounts. The optical components and their mounts are fixedly connected to each other and to the substrate by bonding. While the gain medium is bonded to a mount made of a different material with high thermal conductivity for heat sinking, the cavity's lens and mirror components and their mounts are all made of the same material as the substrate, or a different material that is thermally matched to the substrate, and fixedly mounted on the substrate solely with bonding. The bonding is achieved with adhesive bonding, or some other form of bonding such as molecular bonding, chemically activated direct bonding or hydroxide catalysis bonding.

Abstract: A method of fabricating vertical cavity surface emitting laser, comprising: providing a first substrate formed with a dielectric DBR and a first bonding layer, and a second substrate formed with a etch-stop layer, a heavily doped layer, an active region, a current-confinement layer, and an arsenide DBR firstly, then sticking a third substrate on the arsenide DBR, then removing the second substrate and the etch-stop layer, next bonding the heavily doped layer to the dielectric DBR, next removing the third substrate, finally forming a p-type electrode contact and an n-type electrode contact.

Abstract: The present invention provides a multichannel parallel light emitting device comprising a semiconductor cooler, a cold surface of the semiconductor cooler completely covers the area of a hot surface, and when the hot surface and the cold surface are horizontally disposed, a horizontal distance is reserved between the edge of the cold surface and the edge of the hot surface, and a positive electrode and a negative electrode are fixed on a second surface of the cold surface.

Abstract: An optical device may drive a compensation section of a multi-section optical load to emit a compensation optical pulse by providing, for a first time interval, a compensation electrical pulse to the compensation section. The optical device may drive a main section of the multi-section optical load to emit a main optical pulse by generating, for a second time interval, a main electrical pulse, wherein at least a portion of the first time interval overlaps with the second time interval. The optical device may emit a combined optical pulse, wherein the combined optical pulse includes the compensation optical pulse and the main optical pulse, and wherein the combined optical pulse has a shorter rise time than the main optical pulse.

Abstract: A light source unit for thermally-assisted magnetic head includes a substrate member having a first bonding surface; a light source assembly attached on the first bonding surface of the substrate member and having a second bonding surface; and a heater circuit assembly formed between the substrate member and the light source assembly, the heater circuit assembly having a heater formed on the substrate member and two leads connected at two ends of the heater, the lead being thicker than the heater, thereby a distance between the heater and the second bonding surface is farther than that between the lead and the second bonding surface. The light source unit can reduce mechanical stress and thermal conduction between a light source assembly and a substrate member, thereby improving the performance of the light source assembly and the heater.

Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.

Abstract: The present invention relates to a semiconductor laser device capable of reducing a measurement error of a temperature detecting element for detecting the temperature of a semiconductor laser element and accurately controlling the temperature of the semiconductor laser element. The semiconductor laser device is used for optical analysis and includes: a semiconductor laser element; a temperature detecting element that detects the temperature of the semiconductor laser element; output terminals that output the output of the temperature detecting element to the outside; wires that electrically connect the temperature detecting element and the output terminals; and a heat capacity increasing part that is provided interposed between the temperature detecting element and output terminal, and the output terminal, and contacts with at least part of the wires to increase the heat capacity of the wires.

Abstract: In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.