Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure includes a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The second reflector has an opening extending from a second surface of the second reflector into the second reflector by a predetermined depth. Etching into the second reflector to the predetermined depth reduces the photon lifetime and the threshold gain of the VCSEL, while increasing the modulation bandwidth and maintaining the high reflectivity of the second reflector. Thus, etching the second reflector to the predetermined depth provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot.

Abstract: A laser emitter is provided, including a substrate and a dielectric mask layer located proximate to and above the substrate in a thickness direction. The dielectric mask layer may have a plurality of trenches formed therein. The plurality of trenches may have a plurality of different respective widths. The laser emitter may further include a respective nanowire located within each trench of the plurality of trenches. Each nanowire may include a first semiconductor layer located above the substrate in the thickness direction. Each nanowire may further include a quantum well layer located proximate to and above the first semiconductor layer in the thickness direction. Each nanowire may further include a second semiconductor layer located proximate to and above the quantum well layer in the thickness direction.

Abstract: A laser diode array (102) comprising a plurality of laser diodes (201-210) and a channel (212) proximate to each of the laser diodes (201-210), the channel (212) configured to receive and provide a passage for a flow of a fluid coolant; wherein the laser diodes (201-210) are configured to emit electromagnetic radiation having the same centre wavelength at different respective junction temperatures. A coolant supply system (104) coupled to the laser diode array (102) may cause coolant to flow through the channel (212). A flow rate of the coolant through the channel (212) may be controlled based on temperature measurements of the coolant prior to entering, within, and/or after exiting the laser diode array (102).

Abstract: Systems, methods, and devices are described for in-situ testing of vertical-cavity surface-emitting lasers (VCSELs), VCSEL arrays or laser diodes (each a laser). Testing may comprise bias voltage measurements of one or more lasers. Embodiments may comprise one of a laser, a driver circuit providing a bipolar drive to the laser, and a sensing circuit to measure and/or monitor damage or degradation of the laser. The bipolar drive may comprise a pulsed forward bias output configured to produce a light output during an on-time of the laser, and a pulsed reverse bias output during an off-time of the pulsed forward bias output. The pulsed outputs may comprise a variable, chirped frequency. One or more of a reverse leakage current, and a junction temperature may be measured to monitor a state of health of the laser.

Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

Abstract: A device for generating a laser pulse. The device includes a laser diode that includes a first diode and a second diode, so that the laser diode includes a first anode, a second anode, and a cathode. The device further includes a first voltage potential that is electrically connected to the second anode, a second voltage potential that has a lower value than the first voltage potential, a first switch that is electrically connected to the first anode and to the second voltage potential, and a second switch that is electrically connected to the cathode and to the second voltage potential. A resistor is electrically connected to the first anode and to the second anode.

Abstract: A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

Abstract: A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0?x?1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.

Abstract: A semiconductor laser array includes: a plurality of semiconductor lasers configured to oscillate in a single mode at oscillation wavelengths different from one another, each semiconductor laser including an active layer including a multi-quantum well structure including a plurality of will layers and a plurality of barrier layers laminated alternately, and an n-side separate confinement heterostructure layer and p-side separate confinement heterostructure layer configured to sandwich the active layer therebetween in a thickness direction, band gap energies of the n-side separate confinement heterostructure layer and the p-side separate confinement heterostructure layer being greater than band gap energies of the barrier layers of the active layer. The active layer is doped with an n-type impurity.

Abstract: The present invention provides a device and method for a laser based light source using a combination of laser diode or waveguide gain element excitation source based on gallium and nitrogen containing materials and wavelength conversion phosphor materials designed for inherent safety. In this invention a violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials is closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, light source with closed loop design features to yield the light source as an eye safe light source.

Abstract: A multi-wavelength laser device equipped with a linear cavity along which a first direction and a second direction opposite to the first direction are defined is disclosed. The apparatus includes, along the first direction, a first optical component, a gain and Raman medium, a sum frequency generation crystal, a first second-harmonic generation crystal and a second optical component. The first optical component allows a pumping light to transmit therethrough and be incident in the first direction. The gain and Raman medium receives the pumping light from the first optical component and generates a first infrared base laser light having a first wavelength and a second infrared base laser light having a second wavelength. The first and second optical components form a laser cavity for oscillation of these two infrared base laser lights. The sum frequency generation crystal receives the first and second infrared base laser lights and generates a first visible laser light having a third wavelength.

Abstract: A laser diode module is described herein. In accordance with a first exemplary embodiment, the laser diode module includes a first semiconductor die including at least one electronic switch, and a second semiconductor die including at least one laser diode. The second semiconductor die is bonded on the first semiconductor die using a chip-on-chip connecting technology to provide electrical connection between the electronic switch and the laser diode.

Abstract: An external optical feedback element (108) for tuning an output beam of a gas laser (102) having multiple wavelengths includes a partially reflective optical element (108) positioned on a beam path of the output beam (106) outside of an internal optical cavity of the gas laser (102), and a stage (114) to support the optical element and adjust rotation, horizontal tilt angle, and vertical tilt angle of the optical element with respect to the beam path. The output beam (106) is partially reflected at the optical element (108) and fed back into the internal optical cavity of the gas laser (102), with the intensity varying for multiple wavelengths and adjusted by changing rotation, horizontal tilt angle and vertical tilt angle of the optical element. Thereby, a variable feedback of the output beam into the internal optical cavity of the gas laser is provided, which leads to a selective output wavelength of the gas laser, either at a single line or at multiple lines simultaneously.

Abstract: A combination of microvalves and waveguides may enable the creation of reconfigurable on-chip light sources compatible with planar sample preparation and particle sensing architecture using either single-mode or multi-mode interference (MMI) waveguides. A first type of light source is a DFB laser source with lateral gratings created by the light valves. Moreover, feedback for creating a narrowband light source does not have to be a DFB grating in the active region. A DBR configuration (Bragg mirrors on one or both ends of the active region) or simple mirrors at the end of the cavity can also be used. Alternately, ring resonators may be created using a valve coupled to a bus waveguide where the active gain medium is either incorporated in the ring or inside an enclosed fluid. The active light source may be activated by moving a fluid trap and/or a solid-core optical component defining its active region.

Abstract: In a laser device that emits pulsed laser light by emitting excitation light to a laser medium in a state in which a first voltage is applied to a Q switch and changing the voltage applied to the Q switch from a first voltage to a second voltage after the emission of the excitation light, the application start timing of the first voltage during a normal operation is set to a timing at which the intensity of the pulsed laser light periodically changing due to the vibration of the Q switch is maximized.

Abstract: Vertical cavity surface-emitting lasers (VCSELs) includes a vertical cavity surface-emitting laser including a gain layer configured to generate light, a distributed Bragg reflector disposed on a first surface of the gain layer, and a nanostructure reflector disposed on a second surface of the gain layer opposite from the first surface, the nanostructure reflector including a plurality of nanostructures having a sub-wavelength dimension, wherein the plurality of nanostructures include a plurality of anisotropic nanoelements and are configured to emit a circularly polarized laser light through the nanostructure reflector based on distributions and arrangement directions of the plurality of anisotropic nanoelementss.

Abstract: A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate and having a first side surface, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer and having a second side surface, a back conductive structure, which comprises a first detecting electrode and a second detecting electrode separated from the first detecting electrode, a passivation layer covering one of the first side surface and the second side surface, and first via holes extending from the back conductive structure to the conductive layer, wherein the first detecting electrode and the second detecting electrode are electrically connected to the conductive layer through the first via holes.

Abstract: A laser apparatus including an optical element made of a CaF2 crystal and configured to transmit an ultraviolet laser beam obliquely incident on one surface of the optical element, the electric field axis of the P-polarized component of the laser beam propagating through the optical element coinciding with one axis contained in <111> of the CaF2 crystal, with the P-polarized component defined with respect to the one surface. A method for manufacturing an optical element, the method including causing a seed CaF2 crystal to undergo crystal growth along one axis contained in <111> to form an ingot, setting a cutting axis to be an axis inclining by an angle within 14.18±5° with respect to the crystal growth direction toward the direction of another axis contained in <111>, which differs from the crystal growth direction, and cutting the ingot along a plane perpendicular to the cutting axis.

Abstract: A flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package has a VCSEL pillar array. A first metal contact is formed over a top section of each pillar of the VCSEL pillar array. A second metal contact is formed on a back surface of the VCEL pillar array. An opening is formed in the second metal contact and aligned with the pillars of the VCSEL pillar array. Solder tip is applied on each pillar of the VCSEL pillar array to flip chip mount the VCSEL pillar array.