Abstract: Semiconductor light-emitting apparatus includes substrate, submount above substrate, and semiconductor laser above submount. Semiconductor laser and submount are bonded to each other with first bonding material. Substrate and submount are bonded to each other with second bonding material. Submount has first region and second region near substrate, first region being a region on which spacer is disposed, and second region being a region without spacer. Submount is bonded to substrate by covering at least a portion of second region with second bonding material.

Abstract: Described herein are isolated ring cavities that have refractive and heat-generating components physically separated and mechanically held by flexure mounts that are adapted to function in combination with the physically separated structure to moderate the thermal expansion effects of the heat generated by the refractive and other heat-generating elements (e.g., gain element) of the optical cavity. The flexure mounts may be configured as thinned portions of connective elements, reducing the effects of thermal expansion of the baseplate and allowing a thermal isolation from the baseplate. Multiple flexure mounts may be arranged to minimize further the effects of thermal expansion of the baseplate.

Abstract: A light emitting apparatus includes a laminated structure including a plurality of columnar section assemblies each formed of p columnar sections. The p columnar sections each include a light emitting layer. When viewed in the lamination direction of the laminated structure, the ratio of the maximum width to the minimum width of the light emitting layer in each of q first columnar sections out of the p columnar sections is greater than the ratio of the light emitting layer in each of r second columnar sections out of the p columnar sections. The light emitting layer in each of the p columnar sections does not have a rotationally symmetrical shape. The parameter p is an integer greater than or equal to 2. The parameter q is an integer greater than or equal to 1 but smaller than p. The parameter r is an integer that satisfies r=p?q.

Abstract: A light emitting device includes a laminated structure having a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer includes a light emitting layer, and the second semiconductor layer includes a first portion, and a second portion which surrounds the first portion in a plan view from a laminating direction of the first semiconductor layer and the light emitting layer, and is lower in impurity concentration than the first portion.

Abstract: An optically pumped on-chip solid-state laser includes a solid gain media substrate and a laser generating structure disposed above the solid gain media substrate. The laser generating structure includes a resonator, a pump light input structure, and a laser light output structure; and the resonator is disposed between the pump light input structure and the laser light output structure, and is propped against or is in clearance fit with the solid gain media substrate.

Abstract: A direct-diode laser oscillator 1 can emit laser light to a laser processing head 3 based on the driving commands received from a system controller 5, which can control a laser robot 4 including the laser processing head 3. The direct-diode laser oscillator 1 includes the following: laser modules 10 each including a plurality of laser diodes connected in series or in parallel; a power supply circuit 20 for driving the laser modules 10 at a constant current, and a power controller 30 for controlling the power supply circuit 20 based on the driving commands and performing a fault diagnosis of the laser oscillator 1 based on which one of a plurality of previously divided regions of a diagnosis map the current and voltage applied to the laser modules 10 belong to.

Abstract: Vertical-cavity surface-emitting lasers (VCSELs) and VCSEL arrays having small size and small pitch are provided. Particularly, the present disclosure relates to novel and advantageous chip layouts for ensuring low resistance devices with good yield for small pitch arrays. More particularly, the present disclosure describes approaches for reducing the area consumed by a VCSEL structure so that a higher density VCSEL device may be achieved.

Abstract: An excimer laser system includes first and second gas cylinders connected to a laser chamber for selectively supplying the laser chamber with gases that are needed to generate and emit laser pulsations having a certain energy level from the laser chamber. At least one of the first and second gas cylinders includes a halogen gas. The halogen gas is consumed during the operation of the excimer laser system. A computer system, included within the excimer laser system, is used to determine whether to resupply the laser chamber with halogen gas from the first and/or second cylinders, or to entirely flush out the gas contents of the laser chamber, and to resupply the flushed gas chamber with gas sourced from the first and/or second cylinders.

Abstract: Provided is a semiconductor laser element including: a resonator structure; and a first reflection film and a second reflection film provided on a non-emission end surface of the resonator structure and an emission end surface of the resonator structure, respectively. Reflectance R of the second reflection film at a gain wavelength satisfies the following relational expression: R1?R?R(Oc)×C where R1 is reflectance of the second reflection film when the resonator structure performs laser oscillation with power 1.4 times a minimum value of threshold power which is minimum power for the resonator structure to perform the laser oscillation, R(Oc) is reflectance of the external resonance mirror, and C is a ratio of light, which is reflected by the external resonance mirror and is incident in the resonator structure, to light which is reflected by the external resonance mirror.

Abstract: A method and a system for automatically controlling mode-locking of an optical frequency comb, where the stored control parameters of the working condition in the mode-locked state is combined with the collected working feedback parameters of the optical frequency comb system to dynamically adjust and control the working power of the pump source or/and the temperature of the working environment of the pump source, which not only greatly shortens the control time for stable mode-locking and realizes a fast mode-locking control, but also reduces unnecessary power consumption, thereby further guaranteeing the energy-saving effect of power adjustment control process. The present disclosure well maintains the stable working conditions of the optical comb system, and realizes the mode-locking optimization control of an update mode for the big data, thereby effectively improving the mode-locking control process of the optical frequency comb system, and providing higher operation stability and measurement accuracy.

Abstract: A multi-wavelength mid-infrared laser pulse train cavity dumped laser based on Nd:MgO:APLN crystal is disclosed. In response to the needs in the field of differential absorption lidar, it is necessary to introduce multi-fundamental frequency light pulse accumulation and superposition, and parametric light synchronization pulse compression technology in the multi-wavelength mid-infrared laser operating mechanism. To this end, a splayed parametric light oscillation cavity formed in conjunction with a Nd:MgO:APLN crystal is disclosed, wherein it is possible to obtain multi-wavelength mid-infrared laser pulse train output with narrow pulse width and high peak power, meeting the needs of differential absorption lidar for mid-infrared lasers.

Abstract: The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.

Abstract: A semiconductor laser device includes a semiconductor laser chip that emits laser light, a plate-like base, and a block protruding from the base and supporting the semiconductor laser chip. The block has a supporting surface and a wire bonding surface. The supporting surface faces a first side in a first direction perpendicular to the laser light emitting direction, and supports the semiconductor laser chip. The wire bonding surface is a surface to which a wire connected to the semiconductor laser chip is connected. The wire bonding surface is shifted in a second direction perpendicular to the emitting direction and the first direction with respect to the supporting surface. The wire bonding surface is inclined relative to the supporting surface, such that the wire bonding surface is more offset to a second side in the first direction with increasing distance from the supporting surface in the second direction.

Abstract: A vertical cavity surface emitting laser (VCSEL) emits laser light. The VCSEL has an optical resonator and a photodiode. The optical resonator has: a first mirror, an active region configured to generate laser light, and a second mirror. The active region is arranged between the first mirror and the second mirror. The photodiode is integrated in the optical resonator. The photodiode has: an absorption region having a plurality of absorbing layers configured to absorb the generated laser light. The absorbing layers are arranged spaced apart from one another by a distance d which satisfies the condition: d=(2k?1)?/(4 m). Where ? is the wavelength of the laser light in the absorption region, and k and m are natural numbers ?1.

Abstract: A laser-based light source (10), comprising: at least one first arrangement (100), for generating light (500), comprising: a laser device (200) for generating laser light (510) of a predetermined laser wavelength and emitting this laser light as a laser beam; and a light-conversion device (210) for converting at least part of the laser light into converted light (520); a second arrangement (110)), for generating at least a first signal (300) and a second signal (310), representative for a different part of the spectrum of said light, from direct measurements on a portion of said light (500); and a controller (120) for receiving the first signal and the second signal, for determining a safe-to-operate parameter, based on the first signal and the second signal, and for controlling the operation of the laser-device based on a comparison between the safe-to-operate parameter and at least one predefined threshold.

Abstract: An optical module unit includes: optical modules each including light emitting elements; and a mount on which the light emitting elements are disposed on one side of the mount, and includes a sub-passage; and a manifold to which the optical modules are fixed. The manifold includes a first main passage to which a first end of each of the sub-passages is connected in parallel.

Abstract: A semiconductor laser is formed to include a current blocking layer that is positioned below the active region of the device and used to minimize current spreading beyond the defined dimensions of an output beam's optical mode. When used in conjunction with other current-confining structures typically disposed above the active region (e.g., ridge waveguide, electrical isolation, oxide aperture), the inclusion of the lower current blocking layer improves the efficiency of the device. The current blocking layer may be used in edge-emitting devices or vertical cavity surface-emitting devices, and also functions to improve mode shaping and reduction of facet deterioration by directing current flow away from the facets.

Abstract: In various embodiments, a laser emitter such as a diode bar is cooled during operation via jets of cooling fluid formed by ports in a cooler on which the laser emitter is positioned. The jets strike an impingement surface of the cooler that is thermally coupled to the laser emitter but prevents direct contact between the cooling fluid and the laser emitter itself.

Abstract: The present disclosure relates to a glass having a refractive index of at least 1.7 as well as the use of the glass as a cladding glass of a solid-state laser. The disclosure also relates to a laser component comprising a core of doped sapphire and a cladding glass being placed on said core. The cladding glass is arranged on said core such that light exiting from the core due to parasitic laser activity can enter the cladding glass and can be absorbed there. Thus, a laser component with improved efficiency is obtained. The present disclosure also relates to a method for producing the laser component.

Abstract: A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm?3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 ?m or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.