Patents Examined by Tom Tnomoo
  • Method of manufacturing a trench filled with an insulating material in a semiconductor substrate
    Patent number: 4839306
    Abstract: A method of manufacturing a trench filled with an insulation material in a semiconductor substrate which includes the steps of forming a trench in the substrate, subjecting the substrate to an RF bias sputtering to form an oxide layer on the substrate, form a slope at an upper corner of the trench and produce a roundness at a lower corner of the trench, and filling the trench with the insulation material.
    Type: Grant
    Filed: March 23, 1988
    Date of Patent: June 13, 1989
    Assignee: Oki Electric Industry Co., Ltd.
    Inventor: Hidetoshi Wakamatsu