Abstract: A lock monitoring device includes a detection unit and a plurality of sensors, where the detection unit is configured with a thin circuit board configured with a plurality of detection elements, allowing the detection elements to be connected in parallel with a circuit and then connected to a control circuit; the sensors are configured on parts of the lock such as lock tongues, rotating shaft and correspond to the detection elements; whereby, when the lock is unlocked and locked, the detection elements will detect that the detection elements depart from detection positions and send detection signals to a remote monitoring host, and the monitoring host monitors and records the number and time of the unlocking of the lock, achieving smart access control and further allowing the lock to be safer.

Abstract: A photoelectric conversion apparatus includes a first diode which is an avalanche multiplication-type and a second diode which is an avalanche multiplication-type formed within a semiconductor substrate, a first transistor forming a first quench element, and a second transistor forming a second quench element. The first transistor and the second transistor are disposed between the first diode and the second diode in a planar view. The first transistor and the second transistor are disposed in a common semiconductor well region formed within the semiconductor substrate.

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a transfer gate electrode provided on the first surface of the semiconductor substrate, readout circuit transistors spaced apart from the transfer gate electrode and provided on the first surface of the semiconductor substrate, and a photoelectric conversion layer provided in the semiconductor substrate at a side of the transfer gate electrode and including dopants of a first conductivity type. The photoelectric conversion layer includes a first region having a first thickness and a second region having a second thickness that is less than the first thickness. The second region overlaps with at least a portion of the readout circuit transistors in a direction perpendicular to the first surface of the semiconductor substrate.

Abstract: A circuit is disclosed, including a sensing unit and first to fifth switching units. The sensing unit generates a sensing voltage to a sensing node. The first switching unit is coupled between the sensing node and a first node. The second switching unit is coupled between the sensing node and a second node and generates a first auxiliary voltage to the second node. The first capacitive unit is coupled to the second node. The third switching unit is coupled between the first and second nodes, and adjusts a first transfer voltage at the first node. The fourth switching unit is coupled between the sensing node and a third node, and generates a second transfer voltage to the third node. The fifth switching unit is coupled between the sensing node and a fourth node and generates a second auxiliary voltage to the fourth node.

Abstract: A sensor apparatus includes a cylindrical sensor window defining an axis oriented vertically, at least one air nozzle positioned below the sensor window and aimed upward, and a cap positioned above the sensor window and including a topside and an underside. The topside and the underside are disposed radially outward from the sensor window. The underside includes a first groove having a cross-section elongated circumferentially around the axis, and the cross-section of the first groove curves from a lower end upwardly and outwardly to an upper end.

Abstract: Among other things, one or more systems and/or techniques for improving performance of a dispensing system are provided herein. The dispensing system may comprise an emitter and a detector. The emitter may be configured to transmit light (e.g., and/or one or more other signals). The detector may be configured to measure light, for example. The detector may determine a first measurement of light while the emitter is not transmitting light. The detector may determine a second measurement of light responsive to the emitter transmitting light. The detector may determine a third measurement of light based upon a comparison of the first measurement of light with the second measurement of light. The detector may be direct current (DC) coupled while determining the third measurement of light.

Abstract: An image sensor includes: a pixel array outputting a pixel signal; and a column wiring unit including at least one first column routing wiring extending from the pixel array and including a first connection wiring portion and a protrusion and at least one second column routing wiring including a second connection wiring portion, wherein a sum of lengths of the at least one first connection wiring portion and the protrusion is substantially identical to a length of the at least one second connection wiring portion; and a readout circuit receiving the pixel signal from the column wiring unit.

Abstract: A system, method and mirror are provided in order to more reliably detect the presence of an object, such as a person. In the context of a system, the system includes a sensor configured to emit signals having a predefined wavelength and to detect a reflection of the signals having the predefined wavelength. The system also includes a reflective panel positioned relative to the sensor such that the signals emitted by the sensor are directed toward the reflected panel. The system further includes a filter associated with the reflective panel and positioned relative to the sensor such that the signals emitted by the sensor are also directed toward the filter. The filter is configured to attenuate at least signals having the predefined wavelength.

Abstract: Methods and systems for image sensing are provided. In one example, an apparatus comprises a semiconductor substrate comprising a light incident surface to receive light, a first pinned photodiode, and a second pinned photodiode, the first pinned photodiode and the second pinned photodiode forming a stack structure in the semiconductor substrate along an axis perpendicular to the light incident surface, the stack structure enabling the first pinned photodiode and the second pinned photodiode to, respectively, convert a first component of the light and a second component of the light to first charge and second charge. The apparatus further comprises one or more capacitors formed in the semiconductor substrate and configured to generate a first voltage and a second voltage based on, respectively, the first charge and the second charge.

Abstract: Superconducting nanowire single photon detectors have recently been developed for a wide range of applications, including imaging and communications. An improved detection system is disclosed, whereby the detectors are monolithically integrated on the same chip with Josephson junctions for control and data processing. This enables an enhanced data rate, thereby facilitating several new and improved applications. A preferred embodiment comprises integrated digital processing based on single-flux-quantum pulses. An integrated multilayer fabrication method for manufacturing these integrated detectors is also disclosed. Preferred examples of systems comprising such integrated nanowire photon detectors include a time-correlated single photon counter, a quantum random number generator, an integrated single-photon imaging array, a sensitive digital communication receiver, and quantum-key distribution for a quantum communication system.

Abstract: A photoelectric conversion device includes: a pixel region in which pixels each including a photoelectric converter is arranged, and micro-lenses corresponding to the pixels. The pixel region includes adjacent first and second regions, a first pixel in the first region and a second pixel in the second region adjacent in a direction in which the first and second regions are aligned are arranged at a first arrangement pitch, two pixels in the first region adjacent in the direction are arranged at a second arrangement pitch, two pixels in the second region adjacent in the direction are arranged at a third arrangement pitch, the second and third arrangement pitches are smaller than the first arrangement pitch, and an arrangement pitch of two micro-lenses corresponding to the pixel in the first regions and the pixel in the second region that are adjacent is smaller than the first arrangement pitch.

Abstract: A pixel circuit, a method for performing a pixel-level background light subtraction, and an imaging device are disclosed. In one example of the present disclosure, the pixel circuit includes an overflow gate transistor, a photodiode, and two taps. Each tap of the two taps is configured to store a background signal that is integrated by the photodiode, subtract the background signal from a floating diffusion, store a combined signal that is integrated by the photodiode at the floating diffusion, and generate a demodulated signal based on a subtraction of the background signal from the floating diffusion and a storage of the combined signal that is integrated at the floating diffusion.

Abstract: A pixel array uses two sets of pixels to provide accurate exposure control. One set of pixels provide continuous output signals for automatic light control (ALC) as the other set integrates and captures an image. ALC pixels allow monitoring of multiple pixels of an array to obtain sample data indicating the amount of light reaching the array, while allowing the other pixels to provide proper image data. A small percentage of the pixels in an array is replaced with ALC pixels and the array has two reset lines for each row; one line controls the reset for the image capture pixels while the other line controls the reset for the ALC pixels. In the columns, at least one extra control signal is used for the sampling of the reset level for the ALC pixels, which happens later than the sampling of the reset level for the image capture pixels.

Abstract: An image sensor and a manufacturing method thereof, and an electronic device, which is capable of reducing the cost of the image sensor. The image sensor includes: a pixel array module disposed on a first wafer; a signal processing module disposed on a second wafer; an electrical connection module connecting the pixel array module and the signal processing module; wherein the pixel array module is configured to receive an optical signal and convert the optical signal into an electrical signal, and the signal processing module is configured to process the electrical signal.

Abstract: A capture settings for one or more image capture devices may be determined. The capture setting may define one or more aspects of operation for the image capture device(s). The aspect(s) of operation for the image capture device(s) may include one or more aspects of operation for a processor of the image capture device(s), an image sensor of the image capture device(s), and/or an optical element of the image capture device(s). A machine-readable optical code may be generated based on the capture setting and/or other information. The machine-readable optical code may convey the capture setting for the image capture device(s) such that a first image capture device capturing a first image including the machine-readable optical code may: (1) identify the machine-readable optical code within the first image; (2) determine the capture setting conveyed by the machine-readable optical code; and (3) operate in accordance with the capture setting.

Abstract: Aspects of the present disclosure describe systems, methods and structures for determining any location on a deployed fiber cable from an optical time domain reflectometry (OTDR) curve using a movable mechanical vibration source to stimulate tiny vibration of fiber in deployed fiber cable along the cable route and a fiber sensing system at a central office to detect the vibration(s). Latitude and longitude of the location(s) of the vibration source is measured with a GPS device and a dynamic-OTDR distance is measured at central office (CO) simultaneously. The collected GPS location data and corresponding dynamic-OTDR distance data are paired and saved into a database. This saved data may be processed to graphically overlie a map thereby providing exact cable location on the map thereby providing carriers/service providers the ability to improve fiber fault location on a deployed fiber cable much faster and more accurately than presently possible using methods available in the art.

Abstract: A stacked image sensor includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes a pixel array of rows and columns of pixels, a first column interlayer-connection unit extending in the row direction and disposed adjacent the top or bottom of the pixel array and column routing wires extending in a diagonal direction and connecting the pixel columns and the first column interlayer-connection unit. The second semiconductor die is stacked with the first semiconductor die. The second semiconductor die includes a second column interlayer-connection unit extending in the row direction and disposed at a location corresponding to the first column interlayer-connection unit and connected to the first column interlayer-connection unit, and a column control circuit connected to the second column interlayer-connection unit.

Abstract: An imaging device includes a photodiode array. The photodiodes include a first set of photodiodes configured as image sensing photodiodes and a second set of photodiodes configured as phase detection auto focus (PDAF) photodiodes. The PDAF photodiodes are arranged in at least pairs in neighboring columns and are interspersed among the image sensing photodiodes. Transfer transistors are coupled to corresponding photodiodes. The transfer transistors coupled to the image sensing photodiodes included in an active row of are controlled in response to a first transfer control signal or a second transfer control signal that control all of the image sensing photodiodes of the active row. A transfer transistor is coupled to one of a pair of the PDAF photodiodes of the active row. The first transfer transistor is controlled in response to a first PDAF control signal that is independent of the first or second transfer control signals.

Abstract: An imaging device includes a first pixel circuit having a first plurality of photodiodes that includes a phase detection autofocus photodiode with image sensing photodiodes. A first buffer transistor having a first threshold voltage is coupled to the first plurality of photodiodes to generate a first output signal. A second pixel circuit is included having a second plurality of photodiodes that are all image sensing photodiodes. A second buffer transistor having a second threshold voltage is coupled to the second plurality of photodiodes to generate a second output signal. The first threshold voltage is less than the second threshold voltage. A driver is coupled to receive a combination of the first and second output signals to generate a total output signal. An influence of the first output signal dominates the second output signal in the total output signal because the first threshold voltage is less than the second threshold voltage.

Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.