Abstract: In one embodiment, the semiconductor device includes at least one active fin protruding from a substrate, a first gate electrode crossing the active fin, and a first impurity region formed on the active fin at a first side of the first gate electrode. At least a portion of the first impurity region is formed in a first epitaxial layer portion on the active fin. A second impurity region is formed on the active fin at a second side of the first gate electrode. The second impurity region has at least a portion not formed in an epitaxial layer.
Type:
Grant
Filed:
February 12, 2014
Date of Patent:
April 11, 2017
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Chan-Hee Jeon, Eun-Kyoung Kwon, Il-Ryong Kim, Han-Gu Kim, Woo-Jin Seo, Ki-Tae Lee
Abstract: A method for manufacturing an optoelectronic module is proposed. The method comprises the following steps: providing a top cover with a reflective surface. Then, a light-guiding structure is formed. A mounting device is provided. Next, an optoelectronic device is formed on the mounting device with a first precision. A control chip is formed on the mounting device with a second precision different from the first precision. The top cover combines with the mounting device, wherein the light-guiding structure is between the top cover and the mounting device, and the optoelectronic device faces the reflective surface.
Type:
Grant
Filed:
November 15, 2013
Date of Patent:
January 27, 2015
Assignee:
Centera Photonics Inc.
Inventors:
Shang-Jen Yu, Chien-Chen Hsieh, Chun Chiang Yen