Patents Examined by Trune Dang
  • Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
    Patent number: 5202283
    Abstract: Method for organic free radical, including aliphatic radical, transport of dopant species for precise, predetermined, and reproducible doping concentrations to control electrical properties for chemical vapor deposition grown materials.
    Type: Grant
    Filed: February 19, 1991
    Date of Patent: April 13, 1993
    Assignee: Rockwell International Corporation
    Inventors: Charles R. Younger, Kenneth L. Hess, Stuart J. C. Irvine, Edward R. Gertner, Shawn L. Johnston