Patents Examined by Tu-Tle Ho
  • Same conductivity type highly-doped regions for antifuse memory cell
    Patent number: 6642603
    Abstract: A memory cell for a 3-D integrated circuit memory is described. An antifuse region is sandwiched between two heavily doped regions of the same conductivity type.
    Type: Grant
    Filed: June 27, 2002
    Date of Patent: November 4, 2003
    Assignee: Matrix Semiconductor, Inc.
    Inventor: N. Johan Knall