Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. The sacrificial material layers include a stack of word-line-level sacrificial material layers and at least one drain-select-level sacrificial material layer. Drain-select-level openings are formed through the at least one drain-select-level sacrificial material layer, which is replaced with at least one drain-select-level electrically conductive layer. Memory openings are formed by vertically extending the drain-select-level openings through the word-line-level sacrificial material layers. Memory opening fill structures are formed within the memory openings. The word-line-level sacrificial material layers are replaced with word-line-level electrically conductive layers.

Abstract: An integrated circuit device includes a peripheral circuit structure including a lower substrate, an arc protection diode in the lower substrate, and a common source line driver connected to the arc protection diode, a conductive plate on the peripheral circuit structure, a cell array structure overlapping the peripheral circuit structure in a vertical direction with the conductive plate therebetween, and a first wiring structure connected between the arc protection diode and the conductive plate.

Abstract: A display device includes: a plurality of control lines; a plurality of power supply lines; a plurality of data signal lines; an oxide semiconductor layer; a first metal layer; a gate insulation film; a first inorganic insulation film; a second metal layer; a second inorganic insulation film; and a third metal layer. The oxide semiconductor layer, in a plan view, contains therein semiconductor lines formed as isolated regions between a plurality of drivers and a display area. The semiconductor lines cross the plurality of control lines and the plurality of power supply lines, are in contact with the plurality of control lines via an opening in a gate insulation film, are in contact with the plurality of power supply lines via an opening in the first inorganic insulation film, and have a plurality of narrowed portions, such that thicker and thinner regions exist along the same line.

Abstract: A neuron device is described. The neuron device is based on spontaneous polarization switching which includes a plurality of gate electrodes, a plurality of drain electrodes, a plurality of source lines, a dielectric layer, and a semiconductor layer. The gate electrodes are arranged parallel to each other. The drain electrodes are arranged parallel to each other. The source lines are arranged between the gate electrodes and the drain electrodes and parallel to each other. The dielectric layer is formed at intersections between the gate electrodes and the source lines. The semiconductor layer is formed at intersections between the drain electrodes and the source electrodes. The drain electrodes function as synapse-after-neuron linking terminals. The gate electrodes adjust an arrangement direction of electrical dipoles of the dielectric layer to control a firing time point and a firing height of the neuron device.