Patents Examined by Upehdra Roy
  • Method of making a MESFET having same type conductivity for source, drain, and gate regions
    Patent number: 4325747
    Abstract: A MESFET is disclosed wherein a gallium arsenide semiconductor material is doped. The doping magnitude differs in the source area, drain area, and in the gate area. An increase of the dielectric strength without an increase of parasitic resistances is provided. In the manufacture of the MESFET, shadowing techniques are employed to vary the doping magnitudes.
    Type: Grant
    Filed: May 14, 1979
    Date of Patent: April 20, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventor: Dietrich Ristow