Abstract: A substrate with striped ridge patterns formed on the surface thereof is transported along a transport path. A relationship is determined between the direction of the striped ridge patterns on the substrate surface and the direction of jetting out fluid to the substrate surface. The fluid is jetted out and blown to the substrate surface along the direction satisfying the determined relationship to process the surface of the substrate. It is possible to reliably perform a surface process of each substrate irrespective of different directions of striped ridge patterns on substrate surfaces.

Abstract: A series of evaluation steps is described for the planarization of a semiconductor substrate, such as a semiconductor wafer, using a linear track polisher having a continuous polishing surface. In the series of evaluation steps, there is determined a first pressure and a first continuous polishing surface speed at which an optimum material removal rate can be achieved and wherein the continuous polishing surface does not accumulate glaze as is possible when planarizing doped oxides such as PSG and BPSG.