Abstract: A method for manufacturing an electrostatic discharge (ESD) protective circuit. By using the method according to the invention, since the Zener diode, which has low trigger voltage and low power consumption, is formed in the electrostatic protective circuit, the protective ability of the ESD protective circuit is greatly improved as the integration is relatively high. Furthermore, it is necessary to use an extra photo mask as the ESD implantation step and the Zener breakdown implantation step are performed when the internal circuit and the ESD protective circuit are formed simultaneously, so that the cost is reduced.

Abstract: A method for removing a photoresist. A substrate having a wire on the substrate and a flowable oxide layer over the substrate and a patterned photoresist over the flowable oxide layer is provided. A plasma etching step is performed by using an additional gas mixed with oxygen as a source to remove the photoresist layer.