Abstract: A display apparatus including a circuit board, a plurality of light emitting devices mounted on the circuit board, a transparent substrate disposed on the light emitting devices, and a light absorbing layer disposed between the transparent substrate and the light emitting devices, in which the light absorbing layer covers upper regions of the light emitting devices and a region between the light emitting devices.

Abstract: A microelectronic device has a die with a die conductor at a connection surface. The microelectronic device includes a pillar electrically coupled to the die conductor, and a head electrically coupled to the pillar. The pillar has a die-side flared end at a die end of the pillar; the pillar widens progressively along the die-side flared end, and extends outward by more than a lesser of half a thickness of the die conductor and half a lateral width of the pillar midway between a die end and a head end. The pillar has a head-side flared end at a head end of the pillar; the pillar widens progressively along the die-side flared end, and extends outward by a distance that is greater than a lesser of half a thickness of the head and half the lateral width of the pillar. Methods of forming the microelectronic device are disclosed.

Abstract: In at least one cell region, a semiconductor device includes fin patterns and at least one overlying gate structure. The fin patterns (dummy and active) are substantially parallel to a first direction. Each gate structure is substantially parallel to a second direction (which is substantially perpendicular to the first direction). First and second active fin patterns have corresponding first and second conductivity types. Each cell region, relative to the second direction, includes: a first active region which includes a sequence of three or more consecutive first active fin patterns located in a central portion of the cell region; a second active region which includes one or more second active fin patterns located between the first active region and a first edge of the cell region; and a third active region which includes one or more second active fin patterns located between the first active region and a second edge of the cell region.

Abstract: A display device includes a substrate, a first inner bank and a second inner bank on the substrate and spaced apart from each other, a first electrode on the first inner bank and a second electrode on the second inner bank, and a light emitting element between the first inner bank and the second inner bank, the light emitting element being electrically coupled to the first electrode and the second electrode, wherein the first inner bank comprises a first side surface facing the second inner bank, the second inner bank comprises a second side surface facing the first side surface, and the first side surface and the second side surface are respectively recessed into the first inner bank and the second inner bank, to have a curved shape.

Abstract: A display device, such an organic light emitting display device is disclosed. The display device includes an insulating film including a concave portion in an area of at least one subpixel, a first electrode on a side portion of the concave portion and on the concave portion in an area of the subpixel, an organic layer overlapping the concave portion and on the first electrode. An organic layer disposed in the at least one blue subpixel may include at least one of a first light emitting dopant with a maximum emission wavelength of 457 nm or less, a second light emitting dopant with a full width at half maximum (FWHM) of 30 nm or less, and/or a third light emitting dopant with the maximum emission wavelength of 457 nm or less and the full width at half maximum of 30 nm or less. Thus, a display device with enhanced light extraction efficiency is provided.

Abstract: A semiconductor device comprises a wiring substrate and a semiconductor chip. In the wiring substrate, a plurality of micro-elements each comprised of a stacked structure including a power supply pattern and a ground pattern is arranged at a predetermined interval. In each of the plurality of micro-elements, the power supply pattern is formed in a wiring layer located one layer above or one layer below a wiring layer in which the ground pattern is formed. A power supply potential is to be supplied to the power supply patter, and a ground potential is to be supplied to the ground patter.

Abstract: A display panel including a circuit board having first pads, light emitting devices disposed on the circuit board and having second pads and including at least one first light emitting device to emit light having a first peak wavelength and second light emitting devices to emit light having a second peak wavelength, and a metal bonding layer electrically connecting the first pads and the second pads, in which the metal bonding layer of the first light emitting device has a thickness different from that of the metal bonding layer of the second light emitting devices while including a same material, and an upper surface of the second light devices are disposed at an elevation between an upper surface and a bottom surface of the first light emitting device.

Abstract: A display device includes: a circuit element layer comprising a transistor; a display element layer comprising a first electrode connected to the transistor, a second electrode facing the first electrode, an organic pattern between the first electrode and the second electrode, a pixel defining layer having an opening exposing the first electrode, an auxiliary electrode spaced apart from the opening to cover a portion of the pixel defining layer and connected to the second electrode, a first protection pattern covering the second electrode, and a second protection pattern covering the first protection pattern; and an encapsulation layer covering the display element layer, wherein the first protection pattern and the second protection pattern have stress in directions different from each other.

Abstract: A vertical field effect transistor structure and method for fabricating the same. The structure includes a source/drain layer in contact with at least one semiconductor fin. An edge portion of the source/drain layer includes a notched region filled with a dielectric material. A spacer layer includes a first portion in contact with the source/drain layer and a second portion in contact with the dielectric material. A gate structure contacts the spacer layer and the dielectric material. The method includes forming a source/drain layer in contact with at least one semiconductor fin. A spacer layer is formed in contact with the source/drain layer. A portion of the spacer layer is removed to expose an end portion of the source/drain layer. The exposed end portion of the source/drain layer is recessed to form a notched region within the source/drain layer. A dielectric layer is formed within the notched region.

Abstract: A displaying apparatus including a panel substrate and pixel modules arranged thereon, each pixel module including a circuit board and unit pixels on the circuit board, in which each unit pixel includes light emitting devices longitudinally extending along a first direction on the circuit board and including a substrate, a light emitting structure including first and second conductivity type semiconductor layers and an active layer therebetween, a first connection layer electrically connected to the first conductivity type semiconductor layer, a second connection layer electrically connected to the second conductivity type semiconductor layer, a step adjustment layer disposed between the first connection layer and the second connection layer and covering a portion of the light emitting device, in which the light emitting devices in the unit pixel are arranged in a second direction crossing the first direction.

Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer.

Abstract: A semiconductor package including a substrate; a first semiconductor chip on the substrate; a second semiconductor chip on the first semiconductor chip; and at least one connection terminal between the first semiconductor chip and the second semiconductor chip, wherein the first semiconductor chip includes a first semiconductor chip body; and at least one upper pad on a top surface of the first semiconductor chip body and in contact with the at least one connection terminal, the at least one upper pad includes a recess that is downwardly recessed from a top surface thereof, and a depth of the recess is less than a thickness of the at least one upper pad.

Abstract: Discussed are a display device and a method of manufacturing the same, and more particularly, to a display device including a semiconductor light emitting device having a size of several ?m to several tens of ?m and a method of manufacturing the same. The present disclosure provides a display device, including a base portion, a plurality of transistors disposed on the base portion, a plurality of semiconductor light emitting devices disposed on the base portion, a plurality of wiring electrodes disposed on the base portion, and electrically connected to the plurality of transistors and the plurality of semiconductor light emitting devices, a partition wall disposed on the base portion, and formed to cover the plurality of transistors, and a connection electrode connecting some of the plurality of transistors and some of the plurality of wiring electrodes, wherein the connection electrode is configured to pass through the partition wall.

Abstract: A method includes bonding a first package component and a second package component to an interposer. The first package component includes a core device die, and the second package component includes a memory die. An Independent Passive Device (IPD) die is bonded directly to the interposer. The IPD die is electrically connected to the first package component through a first conductive path in the interposer. A package substrate is bonded to the interposer die. The package substrate is on an opposing side of the interposer than the first package component and the second package component.

Abstract: The present invention relates to a composition comprising a semiconducting light emitting nanoparticle.

Abstract: A semiconductor chip includes a mounting surface having a plurality of first conductive contacts and a second conductive contact, wherein each of the first contacts in the plurality is arranged in a regularly spaced apart array such that centroids of immediately adjacent ones of the first contacts are separated from one another in a first direction by a first distance, each of the first contacts in the plurality have an identical first lateral extent, and the second conductive contact is arranged between two of the first conductive contacts in the first direction such that first and second distances between the at least one second conductive contact and the two of the first conductive contacts are each less than the first distance.

Abstract: Multi-die structures with die-to-die routing are described. In an embodiment, each die is patterned into the same semiconductor substrate, and the dies may be interconnected with die-to-die routing during back-end wafer processing. Partial metallic seals may be formed to accommodate the die-to-die routing, programmable dicing, and various combinations of full metallic seals and partial metallic seals can be formed. This may also be extended to three dimensional structures formed using wafer-on-wafer or chip-on-wafer techniques.

Abstract: A method for assembling an LED apparatus using an epitaxial layered structure comprising a first-type doped semiconductor layer, a second-type doped semiconductor layer, and an active layer between the doped semiconductor layers. The method involves depositing a conductive layer adjacent to and in ohmic contact with the first-type doped semiconductor layer. After forming a pattern masked layer on the conductive layer to expose one or more unprotected mask regions, the unprotected mask region(s) are processed to form a micropixellated structure having micropixel contact areas that are electrically isolated from each other. The method further involves placing a first contact pad over the micropixellated structure to overlap the micropixel contact areas and form a first electrode shared by a set of micro-LEDs. The micropixellated structure is also electrically coupled to a second contact pad that forms a second electrode shared by the set of micro-LEDs.

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

Abstract: Disclosed is a micro LED display having a multi-color pixel array and a method of fabricating the same based on integration with a driving circuit thereof. According to various embodiments, the display may be fabricated by providing an IC device in which a driving circuit has been wired, forming, in one surface of the IC device, a plurality of pixels on which a plurality of partial pixels for emitting different color lights has been stacked, and electrically connecting the partial pixels to the driving circuit using connection members.