Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region; a first planar type capacitor including a gate electrode which is positioned in any one region of the first region and the second region; a non-planar type capacitor including a plurality of non-planar type electrodes which are positioned in the other region of the first region and the second region; a second planar type capacitor including a planar type electrode which is positioned over the first planar type capacitor to overlap with the first planar type capacitor; and a common node under the non-planar type capacitor.